IRFZ34NPBF vs IRFZ24NPBF 비교

다음의 상세 나란히 비교: IRFZ34NPBF 제조: Infineon 및 IRFZ24NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFZ34NPBF IRFZ24NPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.61 $0.46
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Status Active —
FET Type N-Channel, Enhancement Mode N-Channel
Technology HEXFET (Planar DMOS, 5th generation) HEXFET planar cell
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
동작 온도 범위 -55 C to +175 C —
Maximum Junction Temperature 175 C —
패키지 TO-220AB (3-pin + tab, through-hole) TO-220AB (through hole)
실장 유형 Through Hole Through Hole
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard JEDEC standard
RoHS 상태 Compliant Compliant
Configuration Single N-Channel, 3-pin (3+tab) —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) — ± 20 V
RDS(on) at VGS=10V — 70 mOhm (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — 13.3 nC
Power Dissipation (PD) at TC=25C — 45 W
동작 접합 온도 — -55C to +175C
Switching Frequency Range — Optimized for < 100 kHz
Lead-Free — Yes (PBF suffix)
Channel Mode — Enhancement

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