IRLB4132PBF vs IRLL024ZTRPBF 比較
詳細な並列比較: IRLB4132PBF メーカー: Infineon および IRLL024ZTRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRLB4132PBF | IRLL024ZTRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.62 | $0.46 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| トランジスタタイプ | N-Channel MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Tc=25C) | 78 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W | — |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) | — |
| On-Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: total gate charge] | — |
| Maximum Junction Temperature | 175 C | — |
| 動作温度範囲 | -55 C to +175 C | — |
| パッケージ / ケース | TO-220AB (through-hole, 3 leads) | — |
| 実装タイプ | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) | — |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) | — |
| Technology | — | HEXFET Power MOSFET (trench-gate) |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| パッケージ | — | SOT-223 (TO-261-4) |
| MSLレベル | — | 1 (unlimited floor life) |
| RoHS ステータス | — | Compliant |