IRLB4132PBF vs IRLL024ZTRPBF Comparison
Detailed side-by-side comparison of IRLB4132PBF by Infineon and IRLL024ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLB4132PBF | IRLL024ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.46 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Transistor Type | N-Channel MOSFET (HEXFET) | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID, Tc=25C) | 78 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W | β |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) | β |
| On-Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V | β |
| Gate Charge (Qg, typical) | [DATA_NEEDED: total gate charge] | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package / Case | TO-220AB (through-hole, 3 leads) | β |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) | β |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) | β |
| Technology | β | HEXFET Power MOSFET (trench-gate) |
| FET Type | β | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | β | 55 V |
| Gate-Source Voltage (VGS) max | β | Β±16 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | β | 60 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | β | 7 nC |
| Power Dissipation (PD) at TA=25Β°C | β | 1 W |
| Operating Junction Temperature (TJ) | β | -55 Β°C to +150 Β°C |
| Package | β | SOT-223 (TO-261-4) |
| MSL Level | β | 1 (unlimited floor life) |
| RoHS Status | β | Compliant |