IRLR3410TRLPBF vs IRL540NSTRLPBF 比較
詳細な並列比較: IRLR3410TRLPBF メーカー: Infineon および IRL540NSTRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRLR3410TRLPBF | IRL540NSTRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $0.51 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR3410TRLPBF | — |
| Technology | HEXFET (5th generation) N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | — |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | — |
| Gate-Source Threshold VGS(th) typ | 2.0 V | — |
| Total Gate Charge (Qg) | 22.7 nC | 49.3 nC |
| Gate Drive Level | Logic level (5V capable) | — |
| Power Dissipation (PD) at TC=25C | 79 W | — |
| 動作接合温度 | -55C to +175C | — |
| パッケージ | TO-252AA (DPAK), surface mount | TO-263 (D2PAK) |
| 実装タイプ | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | — |
| MSLレベル | 1 | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes (UIS tested) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 44 mΩ |
| On-Resistance (RDS(on)) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Power Dissipation (PD) at Tc=25°C | — | 140 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| 動作温度範囲 | — | -55°C to +175°C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| RoHS ステータス | — | Compliant (LPBF suffix indicates lead-free) |