IRLR3410TRLPBF vs IRL540NSTRLPBF 对比
详细并排对比 IRLR3410TRLPBF 出自 Infineon 和 IRL540NSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3410TRLPBF | IRL540NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.51 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR3410TRLPBF | — |
| Technology | HEXFET (5th generation) N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | — |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | — |
| Gate-Source Threshold VGS(th) typ | 2.0 V | — |
| Total Gate Charge (Qg) | 22.7 nC | 49.3 nC |
| Gate Drive Level | Logic level (5V capable) | — |
| Power Dissipation (PD) at TC=25C | 79 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-252AA (DPAK), surface mount | TO-263 (D2PAK) |
| 安装类型 | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | — |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes (UIS tested) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 44 mΩ |
| On-Resistance (RDS(on)) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Power Dissipation (PD) at Tc=25°C | — | 140 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| 工作温度范围 | — | -55°C to +175°C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| RoHS 状态 | — | Compliant (LPBF suffix indicates lead-free) |