ISC080N10NM6ATMA1 vs IAUCN04S6N009TATMA1 比較
詳細な並列比較: ISC080N10NM6ATMA1 メーカー: Infineon および IAUCN04S6N009TATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC080N10NM6ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.05 | $1.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| パッケージ | PG-TDSON-8 FL (TDSON EP) | PG-LHDSO-10-2 (SSO10T) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55°C to +175°C (TJ max, per datasheet) | — |
| MSLレベル | 1 (per JEDEC J-STD-020, per datasheet) | — |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | — |
| ハロゲンフリー | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Part Family | — | OptiMOS 6 40 V |
| Part Number | — | IAUCN04S6N009T |
| Ordering Code (MPN) | — | IAUCN04S6N009TATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, at Tj) | — | 330 A |
| Power Dissipation (PD, at Tc) | — | 178 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Technology | — | OptiMOS 6 trench MOSFET |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |