ISC080N10NM6ATMA1 vs IAUCN04S6N009TATMA1 Comparison

Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and IAUCN04S6N009TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC080N10NM6ATMA1 IAUCN04S6N009TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Package PG-TDSON-8 FL (TDSON EP) PG-LHDSO-10-2 (SSO10T)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +175°C (TJ max, per datasheet) —
MSL Level 1 (per JEDEC J-STD-020, per datasheet) —
RoHS Status Compliant —
Lead-Free Yes —
Halogen Free Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Part Family — OptiMOS 6 40 V
Part Number — IAUCN04S6N009T
Ordering Code (MPN) — IAUCN04S6N009TATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, at Tj) — 330 A
Power Dissipation (PD, at Tc) — 178 W
On-Resistance RDS(on) max — 0.9 mΩ
Technology — OptiMOS 6 trench MOSFET
Automotive Qualification — AEC-Q101
Lead-Free / RoHS — Yes / Compliant
Gate Threshold VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]

Datasheets & Resources

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