ISC088N08NM6ATMA1 vs IQE036N08NM6CGATMA1 比較
詳細な並列比較: ISC088N08NM6ATMA1 メーカー: Infineon および IQE036N08NM6CGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC088N08NM6ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | — |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Ta=25 C | 3 W | — |
| Power Dissipation (PD) at Tc=25 C | 71 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | PG-TDSON-8 FL | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL level] | MSL1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | Trench MOSFET, OptiMOS 6 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| 動作温度範囲 | — | -55 C to +175 C (junction, Tj) |
| Configuration | — | Single N-channel, Source-Down |