K3K8K80BM-JGCT vs K3LK4K40CM-BGCP 比較
詳細な並列比較: K3K8K80BM-JGCT メーカー: Samsung Electronics および K3LK4K40CM-BGCP メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 生産中
仕様比較
| パラメータ | K3K8K80BM-JGCT | K3LK4K40CM-BGCP |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | DRAM |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3.10 | $37.80 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| メモリタイプ | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 96 Gb (12 GB) |
| メモリ構成 | [DATA_NEEDED: x8/x16 organization] | 1536M x 64 |
| インターフェース | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5 (JEDEC) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | 1.05 V |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS Status] |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | — |
| データレート | — | 6400 Mbps per pin |
| パッケージ | — | 496-ball FBGA |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Scheme | — | Per-bank / all-bank refresh |
| Power-Down Modes | — | Deep sleep / power-down supported |
| Application Segment | — | Mobile, embedded, computing modules |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |