K3K8K80BM-JGCT vs K3LK4K40CM-BGCP 对比
详细并排对比 K3K8K80BM-JGCT 出自 Samsung Electronics 和 K3LK4K40CM-BGCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 量产中
规格对比
| 参数 | K3K8K80BM-JGCT | K3LK4K40CM-BGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $37.80 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 存储器类型 | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 96 Gb (12 GB) |
| 存储组织 | [DATA_NEEDED: x8/x16 organization] | 1536M x 64 |
| 接口 | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5 (JEDEC) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | 1.05 V |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS Status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 数据速率 | — | 6400 Mbps per pin |
| 封装 | — | 496-ball FBGA |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Scheme | — | Per-bank / all-bank refresh |
| Power-Down Modes | — | Deep sleep / power-down supported |
| Application Segment | — | Mobile, embedded, computing modules |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |