K3LK8K80CM-MFCP vs K3K8K80BM-JGCT 比較
詳細な並列比較: K3LK8K80CM-MFCP メーカー: Samsung Electronics および K3K8K80BM-JGCT メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 生産中仕様比較
| パラメータ | K3LK8K80CM-MFCP | K3K8K80BM-JGCT |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $3.10 |
| メモリタイプ | LPDDR5 SDRAM | Low Power DRAM (LPDDR) component |
| Density | 48 Gbit (6 GB) | [DATA_NEEDED: die density in Gb] |
| メモリ構成 | [DATA_NEEDED: organization (x width)] | [DATA_NEEDED: x8/x16 organization] |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| インターフェース | LPDDR5 (JESD209-5 class low-power DRAM interface) | [DATA_NEEDED: LPDDR4X or LPDDR5] |
| パッケージ | 315-ball FBGA (MFCP) | — |
| Ball Count | 315 | [DATA_NEEDED: package ball count] |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -40 C to +105 C (automotive-grade) | [DATA_NEEDED: operating temperature range] |
| 電源電圧 | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS ステータス | unknown | [DATA_NEEDED: RoHS compliance] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K3K mobile DRAM (LPDDR) component series |
| Maximum Data Rate | — | [DATA_NEEDED: Mbps] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: core supply voltage] |
| Supply Voltage (VDDQ) | — | [DATA_NEEDED: I/O supply voltage] |
| Package Type | — | FBGA (Ball Grid Array) |
| Speed Grade Suffix | — | J (per Samsung speed-grade coding) |
| Packing Suffix | — | CT (per Samsung packing-code convention) |
| MSLレベル | — | [DATA_NEEDED: moisture sensitivity level] |