K3LK8K80CM-MFCP vs K3K8K80BM-JGCT 비교
다음의 상세 나란히 비교: K3LK8K80CM-MFCP 제조: Samsung Electronics 및 K3K8K80BM-JGCT 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 활성사양 비교
| 파라미터 | K3LK8K80CM-MFCP | K3K8K80BM-JGCT |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $3.10 |
| 메모리 유형 | LPDDR5 SDRAM | Low Power DRAM (LPDDR) component |
| Density | 48 Gbit (6 GB) | [DATA_NEEDED: die density in Gb] |
| 메모리 구성 | [DATA_NEEDED: organization (x width)] | [DATA_NEEDED: x8/x16 organization] |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| 인터페이스 | LPDDR5 (JESD209-5 class low-power DRAM interface) | [DATA_NEEDED: LPDDR4X or LPDDR5] |
| 패키지 | 315-ball FBGA (MFCP) | — |
| Ball Count | 315 | [DATA_NEEDED: package ball count] |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -40 C to +105 C (automotive-grade) | [DATA_NEEDED: operating temperature range] |
| 공급 전압 | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS 상태 | unknown | [DATA_NEEDED: RoHS compliance] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K3K mobile DRAM (LPDDR) component series |
| Maximum Data Rate | — | [DATA_NEEDED: Mbps] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: core supply voltage] |
| Supply Voltage (VDDQ) | — | [DATA_NEEDED: I/O supply voltage] |
| Package Type | — | FBGA (Ball Grid Array) |
| Speed Grade Suffix | — | J (per Samsung speed-grade coding) |
| Packing Suffix | — | CT (per Samsung packing-code convention) |
| MSL 레벨 | — | [DATA_NEEDED: moisture sensitivity level] |