K9LUGY8J7D-BCK0 vs K9JUGY8J5C-CCK0 比較

詳細な並列比較: K9LUGY8J7D-BCK0 メーカー: Samsung Electronics および K9JUGY8J5C-CCK0 メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Samsung Electronics
K9LUGY8J7D-BCK0 K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 ✓ 生産中
Samsung Electronics
K9JUGY8J5C-CCK0 K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 ✓ 生産中

仕様比較

パラメータ K9LUGY8J7D-BCK0 K9JUGY8J5C-CCK0
ブランド Samsung Electronics Samsung Electronics
カテゴリ Memory ICs Memory ICs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.00 $7.60
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D V-NAND Flash Memory —
Memory Technology V-NAND (3D NAND flash) —
Density [DATA_NEEDED: density] 1 Tb (128 GB)
Cell Type [DATA_NEEDED: cell type (MLC/TLC/QLC)] TLC (Triple-Level Cell)
メモリ構成 [DATA_NEEDED: organization] [DATA_NEEDED: page/block organization]
インターフェース [DATA_NEEDED: interface type] [DATA_NEEDED: toggle/ONFI mode]
電源電圧 [DATA_NEEDED: VCC range] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Read Time (typ) [DATA_NEEDED: tR] —
Endurance [DATA_NEEDED: P/E cycles] —
動作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range]
パッケージ [DATA_NEEDED: package type and dimensions] [DATA_NEEDED: BGA package code and dimensions]
実装タイプ Surface Mount Surface Mount
RoHS ステータス unknown [DATA_NEEDED: RoHS status]
メモリタイプ — NAND Flash - V-NAND (TLC)
Technology Generation — V6 (6th-gen V-NAND, 128-layer)
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ range]
Read Latency — [DATA_NEEDED: tR]
Program Time — [DATA_NEEDED: tPROG]
Endurance (P/E cycles) — [DATA_NEEDED: rated P/E cycles]
MSLレベル — [DATA_NEEDED: moisture sensitivity level]

データシート&リソース

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