K9PDG08U5M vs K9QDGB8U7M 比較
詳細な並列比較: K9PDG08U5M メーカー: Samsung Electronics および K9QDGB8U7M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9PDG08U5M | K9QDGB8U7M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | EEPROM | Memory ICs |
| ライフサイクル状態 | 製造終了 | Unknown |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.20 | $0.00 |
| メモリタイプ | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | [DATA_NEEDED: Density] |
| メモリ構成 | x8 (multiplexed I/O) | [DATA_NEEDED: Organization] |
| 電源電圧 | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: Supply Voltage] |
| パッケージ | TSOP1-48 | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| インターフェースタイプ | — | [DATA_NEEDED: Interface Type] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |