M29F800FT55N3E2 vs M29F400FT55N3E2 比較
詳細な並列比較: M29F800FT55N3E2 メーカー: Micron Technology および M29F400FT55N3E2 メーカー: Micron Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 生産中仕様比較
| パラメータ | M29F800FT55N3E2 | M29F400FT55N3E2 |
|---|---|---|
| ブランド | Micron Technology | Micron Technology |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.98 | $4.15 |
| メモリタイプ | NOR Flash | NOR Flash (Parallel) |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 4 Mbit (512K x 8) |
| Access Time | 55 ns | 55 ns |
| 電源電圧 | 5 V | 5 V (single supply) |
| インターフェース | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | Top boot (FT variant) |
| 動作温度 | -40C to +125C | [DATA_NEEDED: Operating Temperature Range] |
| パッケージ | 48-TSOP I | 44-SO (SOP-44) |
| 実装タイプ | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | [DATA_NEEDED: Program/Erase Cycles] |
| Data Retention | >20 years (typical for family) | [DATA_NEEDED: Data Retention] |
| Ready/Busy Output | Yes | — |
| RoHS ステータス | Compliant (E suffix = lead-free/RoHS) | [DATA_NEEDED: RoHS Status] |
| Programming Supply | — | No 12 V VPP required (5.0 V programming) |
| Command Set | — | JEDEC standard compatible |
| Active Read Current | — | [DATA_NEEDED: Active Current] |
| Standby Current | — | [DATA_NEEDED: Standby Current] |
| Block Protection | — | Hardware block protection |
| MSLレベル | — | [DATA_NEEDED: Moisture Sensitivity Level] |