MRF7S21080HR3 vs MRF8HP21080HR5 比較
詳細な並列比較: MRF7S21080HR3 メーカー: NXP Semiconductors および MRF8HP21080HR5 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF7S21080HR3 | MRF8HP21080HR5 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $24.95 | $88.00 |
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode | LDMOS, N-Channel, Dual (2 elements) |
| Technology | RF Power Field Effect Transistor (lateral MOSFET) | W-CDMA, LTE Lateral N-Channel RF Power MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.11 GHz to 2.17 GHz | — |
| Rated Drain Voltage | 65 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 800 mA | — |
| Output Power (Avg, W-CDMA) | 22 W Avg. | — |
| Power Gain | 18 dB | 14.4 dB at 2.17 GHz |
| Drain Efficiency (typical) | 32 % | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Output Signal PAR | 6.5 dB at 0.01% CCDF | — |
| Input Signal PAR | 7.5 dB at 0.01% CCDF | — |
| Channel Bandwidth | 3.84 MHz | — |
| パッケージ | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) | — |
| 実装タイプ | Surface Mount / Flange Mount | Flange Mount / Chassis Mount |
| Application | CDMA / W-CDMA / LTE base-station power amplifiers | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Configuration | — | Common Source, 2 Elements |
| Frequency | — | 2.17 GHz (2110–2170 MHz cellular band) |
| Test Voltage | — | 28 V |
| Test Current | — | 150 mA |
| Output Power (Avg.) | — | 16 W (W-CDMA/LTE) |
| Drain-Source Voltage Rating | — | 65 V |
| パッケージ / ケース | — | NI-780-4 (Case 465M) |
| Number of Terminals | — | 4 |
| Surface Mount | — | No (flange mount) |
| Peak Reflow Temperature | — | 260 C (not applicable - flange mount) |
| Part Status (DigiKey) | — | Discontinued at Digi-Key |