MRF8HP21080HR5 - 16W 2.17GHz RF Power LDMOS | NXP
部品番号: MRF8HP21080HR5 ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $130 | $1,300.00 |
| 100 | $115 | $11,500.00 |
| 500 | $100 | $50,000.00 |
| 1,000 | $88 | $88,000.00 |
MRF8HP21080HR5 概要
What is an RF Power LDMOS? LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant transistor technology for high-power RF amplification in the 1–3GHz range. It belongs to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family and, more broadly, the RF power transistor hierarchy used in wireless infrastructure. Compared to GaN HEMT or bipolar RF transistors, LDMOS offers the best cost-per-watt at sub-3GHz frequencies and remains the workhorse for cellular base-station power amplifiers.
The MRF8HP21080HR5 features high gain (14.4dB at 2.17GHz), robust 65V drain breakdown, and a thermally enhanced NI-780-4 ceramic flange package engineered for direct bolt-down to a heatsink or spreader. Its dual-channel configuration enables Doherty or push-pull amplifier designs. The device is purpose-built for W-CDMA and LTE base-station driver or final-stage amplification, with linearity and efficiency tuned for 3GPP signal profiles.
Designed for cellular infrastructure RF amplification, the MRF8HP21080HR5 delivers 14.4dB gain, 65V breakdown ruggedness, and 16W average output power under W-CDMA/LTE test conditions. The NI-780-4 flange package provides low thermal resistance and is directly compatible with industry-standard RF amplifier module layouts used by macro-cell and small-cell base-station OEMs.
Typical applications include W-CDMA/LTE base-station power amplifiers, Doherty final stages, driver amplifiers for higher-power PAs, and cellular repeater/boosters operating in the 2110–2170MHz band. Pair with circulators and digital predistortion (DPD) front-ends for production line systems.
When laying out the PCB, route the RF input/output on 50Ω controlled-impedance traces and bond the gate/drain leads with minimal lead length to preserve gain and efficiency. Always bolt the ceramic flange to a clean, flat heatsink with proper thermal compound - inadequate cooling is the most common cause of field failure in LDMOS RF amplifiers.
This page synthesizes distributor pricing, drop-in NXP alternative part numbers, and practical RF design guidance not aggregated in the manufacturer datasheet alone.
ドロップイン代替品: MRF8HP21080HR5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF8HP21080HR5 （同一形状・フットプリント） — 相違点: Power Gain, Technology, Transistor Type, Mounting Type, Application.
クイック比較ツール — 並列比較する代替部品を選択:
MRF8HP21080HSR5
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8HP21130HR5
✅ ドロップイン✓ 在庫あり
$65 / 個
データシートを見る →MRF8S21100HR5
✅ ドロップイン✓ 在庫あり
$61.75 / 個
データシートを見る →MRF8HP21080HR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF7S21080HR3
✅ ドロップイン✓ 在庫あり
$24.95 / 個
データシートを見る →MRF8HP21080HR5 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| トランジスタタイプ | LDMOS, N-Channel, Dual (2 elements) |
| Configuration | Common Source, 2 Elements |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) |
| Test Voltage | 28 V |
| Test Current | 150 mA |
| Power Gain | 14.4 dB at 2.17 GHz |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) |
| Drain-Source Voltage Rating | 65 V |
| パッケージ / ケース | NI-780-4 (Case 465M) |
| 実装タイプ | Flange Mount / Chassis Mount |
| Number of Terminals | 4 |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET |
| Surface Mount | No (flange mount) |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) |
| Part Status (DigiKey) | Discontinued at Digi-Key |
MRF8HP21080HR5 ピン構成
| ピン 1 | Drain — RF output / DC drain (flange-connected thermal pad) |
| ピン 2 | Gate — RF input / DC gate bias |
| ピン 3 | Source — Source / ground (flange-connected) |
| ピン 4 | NC — Not connected (mechanical/thermal pad reference) |
安全動作領域
主な用途
MRF8HP21080HR5 の用途: 6 件s: W-CDMA/LTE Base-Station Power Amplifier Driver Stage, Doherty Final-Stage for Small-Cell / Micro-Cell Base Stations, Cellular Repeater / Signal Booster Amplification, RF Front-End Driver for Higher-Power Doherty Amplifiers, Industrial / Scientific 2.1–2.2GHz RF Power Source, Legacy Replacement / Aftermarket Cellular Infrastructure Repair.
W-CDMA/LTE Base-Station Power Amplifier Driver Stage
The MRF8HP21080HR5 fits W-CDMA and LTE base-station driver-stage PA applications because its 14.4dB gain at 2.17GHz and 16W average output power under 3GPP test conditions provide ample drive level for the final-stage LDMOS (e.g., MRF8S21100HR5) in a two-stage Doherty lineup. Operating from a 28V rail with 150mA quiescent bias, it preserves the linearity required for LTE 20MHz QAM64 signals while keeping power-added efficiency above 30%. The NI-780-4 ceramic flange bolts directly to a heatsink and is compatible with industry-standard Doherty PCB layouts used by major cellular OEMs.
おすすめ
Doherty Final-Stage for Small-Cell / Micro-Cell Base Stations
For small-cell and micro-cell LTE base-station final stages, the MRF8HP21080HR5 delivers the 16W average output power typical of micro-cell PAs operating in the 2110–2170MHz band. Its 14.4dB gain simplifies the drive chain, and the NI-780-4 flange package provides the thermal headroom required for continuous downlink transmission at micro-cell duty cycles. Pairing the device in a symmetrical Doherty configuration with proper digital predistortion (DPD) yields high efficiency while meeting 3GPP ACLR and EVM masks. The 65V drain breakdown provides margin against load-VSWR mismatches at the antenna feed.
おすすめ
Cellular Repeater / Signal Booster Amplification
The MRF8HP21080HR5 is well-suited to cellular repeater and signal-booster power-amplifier modules operating in the LTE Band 1 / W-CDMA Band I uplink or downlink. Its 14.4dB gain at 2.17GHz and 16W output are matched to indoor/outdoor repeater final-stage requirements, while the ceramic NI-780-4 flange enables compact mechanical integration. The 65V breakdown rating protects the transistor against the high-VSWR environments typical of repeater antenna deployments, and the LDMOS technology provides the linearity required to avoid degrading signal quality in cascaded booster chains.
おすすめ
RF Front-End Driver for Higher-Power Doherty Amplifiers
In a cascaded Doherty power amplifier for macro-cell base stations, the MRF8HP21080HR5 serves as a driver for the main PA (e.g., MRF8HP21130HR5 or MRF8S21100HR5). Its 14.4dB gain and 16W output easily saturate the final-stage LDMOS while keeping the driver itself well within its safe operating area. Operating at 28V with 150mA quiescent bias, the device exhibits the high linearity needed for 4G LTE carrier aggregation. The NI-780-4 flange allows direct mounting on the same heatsink/spreader as the final-stage transistor, simplifying thermal design.
おすすめ
Industrial / Scientific 2.1–2.2GHz RF Power Source
Beyond cellular, the MRF8HP21080HR5 can be repurposed as a CW or pulsed RF power source in industrial and scientific instrumentation around 2.1–2.2GHz, including plasma-generation drivers, microwave heating prototypes, and test-bed signal sources. Its 16W output at 28V and 65V drain breakdown rating give a wide safe operating envelope. The dual N-channel configuration enables push-pull or balanced amplifier topologies, while the ceramic flange provides the thermal performance required for sustained CW operation in laboratory environments.
おすすめ
Legacy Replacement / Aftermarket Cellular Infrastructure Repair
Because the MRF8HP21080HR5 is listed as discontinued at major catalog distributors, it is also a strong fit for service-replacement and aftermarket repair of legacy W-CDMA / LTE base-station PA modules already deployed in the field. Its NI-780-4 flange matches the original PA-module mechanical layout, enabling direct bolt-on replacement without PCB rework. Authorized aftermarket distributors such as Rochester Electronics continue to allocate stock for telecom infrastructure operators that must maintain deployed systems until full 5G NR migration completes.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF8HP21080HR5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF8HP21080HSR5 | MRF8HP21130HR5 | MRF8S21100HR5 | MRF8HP21080HR3 | MRF7S21080HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780-4 (Case 465M) | NI-780-4 - same | NI-780H-4 - same NI-780 family | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same |
| Output Power (Avg.) | 16 W | 16 W | 130 W | 100 W | 16 W | ~80 W pulsed |
| Power Gain | 14.4 dB | 14.4 dB | ~14 dB | ~13 dB | 14.4 dB | ~12 dB |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Voltage Rating | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Frequency Band | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz |
| Technology Generation | MRF8 (latest LDMOS) | MRF8 (same) | MRF8 (same) | MRF8 (same) | MRF8 (same) | MRF7 (legacy generation) |
主な差別化要因
- Same NI-780-4 footprint with higher output power rating for higher-tier Doherty use （vs MRF8HP21130HR5)
- Lower gain but higher power for final-stage-only macro-cell PAs （vs MRF8S21100HR5)
- Newer MRF8 process generation vs older MRF7 （vs MRF7S21080HR3)
設計ノート
Bolt the NI-780-4 ceramic flange to a clean, flat heatsink with a thin layer of high-quality thermal grease. Estimated: at 16W output and approximately 30% PAE, the device dissipates roughly 37W as heat; without adequate cooling the junction will exceed 200C within seconds. Use a torque wrench per NXP's mounting specification to avoid ceramic cracking and ensure low thermal resistance.
Use 50Ω controlled-impedance microstrip or stripline on the RF input and output traces. Keep gate and drain bond-wire leads minimal to preserve the 14.4dB gain and minimize parasitic inductance. Place DC-bias decoupling capacitors as close as possible to the gate and drain leads, and isolate the RF and DC grounds with a low-impedance via fence around the flange.
Do not exceed the 65V drain-source breakdown rating. Even brief overvoltage transients from load VSWR or switching power-supply ringing can permanently damage the LDMOS die. Always include a drain-voltage clamp or DC-blanking circuit on the supply rail. Estimated: a 2:1 VSWR mismatch at 16W can produce drain voltage swings up to 2x the supply - well above 65V on a 28V rail.
For LTE and W-CDMA operation, bias the device in Class AB at approximately 150mA quiescent current per NXP's reference design. Lower bias degrades linearity (ACLR/EVM); higher bias reduces efficiency. Use a stable, low-noise gate-bias supply with adequate RF decoupling - any gate-bias noise couples directly into the RF output and degrades ACLR.
コンプライアンス情報
RoHS/REACH compliance not stated in available web data; this is an RF power transistor for cellular infrastructure (telecom), not automotive-qualified. AEC-Q100 not applicable. Refer to NXP product page for the latest compliance declarations.
