MRF8S18120HR3 vs MRF8S19260HSR6 比較
詳細な並列比較: MRF8S18120HR3 メーカー: NXP Semiconductors および MRF8S19260HSR6 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ 生産中
仕様比較
| パラメータ | MRF8S18120HR3 | MRF8S19260HSR6 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $54.20 | $124.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S18120HR3 | MRF8S19260HSR6 |
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Dual |
| Frequency Range | 1805 to 1880 MHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (typ) | 18.2 dB at 1.81 GHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 800 mA | — |
| Drain Current Rating | 10 uA (leakage spec entry per datasheet) | — |
| Operating Mode | Class AB, Class C | Class AB and Class C capable |
| パッケージ | NI-780H (3-pin ceramic, flangeless) | — |
| 実装タイプ | Surface Mount / Screw-down heatsink | Chassis / Flange Mount (through-hole RF bolt-down) |
| Target Application | GSM, GSM EDGE base station PA | — |
| RoHS ステータス | Compliant per NXP product page | Compliant |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Power Gain | — | 18.2 dB at 1.99 GHz |
| パッケージ / ケース | — | NI-1230S-8 (ceramic air-cavity bolt-down) |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |