MRF8S18120HR3 vs MRF8S19260HSR6 비교
다음의 상세 나란히 비교: MRF8S18120HR3 제조: NXP Semiconductors 및 MRF8S19260HSR6 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8S18120HR3 | MRF8S19260HSR6 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $54.20 | $124.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S18120HR3 | MRF8S19260HSR6 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Dual |
| Frequency Range | 1805 to 1880 MHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (typ) | 18.2 dB at 1.81 GHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 800 mA | — |
| Drain Current Rating | 10 uA (leakage spec entry per datasheet) | — |
| Operating Mode | Class AB, Class C | Class AB and Class C capable |
| 패키지 | NI-780H (3-pin ceramic, flangeless) | — |
| 실장 유형 | Surface Mount / Screw-down heatsink | Chassis / Flange Mount (through-hole RF bolt-down) |
| Target Application | GSM, GSM EDGE base station PA | — |
| RoHS 상태 | Compliant per NXP product page | Compliant |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Power Gain | — | 18.2 dB at 1.99 GHz |
| 패키지 / 케이스 | — | NI-1230S-8 (ceramic air-cavity bolt-down) |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |