RTAX1000S-1LG624V vs RTAX1000SL-LG624E 比較
詳細な並列比較: RTAX1000S-1LG624V メーカー: Microchip Technology および RTAX1000SL-LG624E メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ 生産中Microchip Technology
RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip
RTAX1000SL-LG624E ✓ 生産中仕様比較
| パラメータ | RTAX1000S-1LG624V | RTAX1000SL-LG624E |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3,600.00 | $0.00 |
| Equivalent System Gates | 1000000 | 1,000,000 |
| Logic Cells | 18144 | — |
| CLBs | 12096 | — |
| Maximum User I/Os | 418 | — |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | — |
| Technology | CMOS antifuse (one-time programmable) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| SEU Rate | Less than 1E-10 errors per bit-day | — |
| Combinatorial Delay (max) | 0.93 ns | — |
| Speed Grade | -1 | — |
| パッケージ | LG624 (624-ball ceramic column grid array) | 624-Pin LGA (CBGA624), Ceramic |
| Configuration | Nonvolatile, live at power-up, single chip | Live-at-power-up (no external configuration device) |
| Radiation Tolerance Class | Rad-tolerant (space flight) | — |
| Architecture Family | RTAX-S (based on Axcelerator) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Screening | [DATA_NEEDED: screening flow per order code suffix] | — |
| Supply Voltage (Core) | [DATA_NEEDED: core supply voltage] | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Family | — | RTAX-SL Radiation-Tolerant FPGA |
| ASIC Gates | — | 125,000 |
| Logic Cells (CLBs) | — | 12,096 |
| Maximum Combinatorial Delay per CLB | — | 0.93 ns |
| Maximum Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Supply Voltage | — | 1.5 V |
| Packaging | — | Box |
| Technology Base | — | CMOS, Antifuse |
| I/O Voltage Range | — | [DATA_NEEDED: I/O voltage range] |
| TID Rating | — | [DATA_NEEDED: total ionizing dose rating] |
| SEU Immunity | — | [DATA_NEEDED: single-event upset immunity figure] |