RTAX2000DL-CQ352E vs RTAX2000DL-CQ352V 比較
詳細な並列比較: RTAX2000DL-CQ352E メーカー: Microchip Technology および RTAX2000DL-CQ352V メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX2000DL-CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX2000DL-CQ352E ✓ 生産中Microchip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ 生産中仕様比較
| パラメータ | RTAX2000DL-CQ352E | RTAX2000DL-CQ352V |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3,360.00 | $0.00 |
| System Gates | 2,000,000 | — |
| Configurable Logic Blocks (CLBs) | 19,712 | — |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |
| Programmable Type | Antifuse (one-time programmable), live at power-up | — |
| パッケージ | CQFP-352 (Ceramic Quad Flat Pack) | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| Package Dimensions | 48 mm x 48 mm | — |
| Terminal Pitch | 0.50 mm | 0.500 mm |
| Number of Terminals | 352 | — |
| User Input Terminals | 166 | — |
| User Output Terminals | 166 | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Clock Features | Segmentable clocks, chip-wide highway routing | — |
| Technology | Digital CMOS | CMOS, antifuse (nonvolatile, one-time programmable) |
| Speed Grade | D (standard) | — |
| Application Domain | Space-flight systems (radiation tolerant) | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | -55C to +125C |
| 電源電圧 | [DATA_NEEDED: core supply voltage] | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Equivalent System Gates | — | 2,000,000 |
| Logic Cells | — | 29,568 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| DSP Mathblocks | — | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| Configuration | — | Live-at-power-up (antifuse, no external boot device) |