RTAX2000SL-1CG1152V vs RTAX2000S-1LG624V 比較
詳細な並列比較: RTAX2000SL-1CG1152V メーカー: Microchip Technology および RTAX2000S-1LG624V メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX2000SL-1CG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CG1152V ✓ 生産中Microchip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ 生産中仕様比較
| パラメータ | RTAX2000SL-1CG1152V | RTAX2000S-1LG624V |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2000000 | 2,000,000 gates |
| Logic Cells | 32256 | — |
| Configurable Logic Blocks (CLBs) | 21504 | 21,504 |
| Technology | Digital CMOS, anti-fuse OTP | — |
| Speed Grade | -1 | -1 |
| パッケージ | CG1152 (1152-pin ceramic column grid array) | CG624, 624-pin ceramic column grid array |
| Qualification Flow | V (space/flight, suffix V) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC protection |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Dedicated carry logic | — |
| Configuration | Single-chip, live at power-up (no external boot device) | Single-chip, live at power-up (no boot device required) |
| Programmability | One-Time Programmable (OTP) anti-fuse | — |
| Application Domain | Space-flight systems (radiation-tolerant) | — |
| 電源電圧 | [DATA_NEEDED: core and I/O supply voltage] | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | — |
| Total Equivalent Gate Density Range (Family) | Up to 4,000,000 equivalent system gates | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| 実装タイプ | Surface Mount | Surface Mount |
| User I/Os (maximum, family) | — | Up to 684 |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| 動作温度範囲 | — | [DATA_NEEDED: operating temperature range] |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |