RTAX2000SL-1CG1152V vs RTAX2000S-1LG624V 비교
다음의 상세 나란히 비교: RTAX2000SL-1CG1152V 제조: Microchip Technology 및 RTAX2000S-1LG624V 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Microchip Technology
RTAX2000SL-1CG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CG1152V ✓ 활성Microchip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ 활성사양 비교
| 파라미터 | RTAX2000SL-1CG1152V | RTAX2000S-1LG624V |
|---|---|---|
| 브랜드 | Microchip Technology | Microchip Technology |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2000000 | 2,000,000 gates |
| Logic Cells | 32256 | — |
| Configurable Logic Blocks (CLBs) | 21504 | 21,504 |
| Technology | Digital CMOS, anti-fuse OTP | — |
| Speed Grade | -1 | -1 |
| 패키지 | CG1152 (1152-pin ceramic column grid array) | CG624, 624-pin ceramic column grid array |
| Qualification Flow | V (space/flight, suffix V) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC protection |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Dedicated carry logic | — |
| Configuration | Single-chip, live at power-up (no external boot device) | Single-chip, live at power-up (no boot device required) |
| Programmability | One-Time Programmable (OTP) anti-fuse | — |
| Application Domain | Space-flight systems (radiation-tolerant) | — |
| 공급 전압 | [DATA_NEEDED: core and I/O supply voltage] | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | — |
| Total Equivalent Gate Density Range (Family) | Up to 4,000,000 equivalent system gates | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| 실장 유형 | Surface Mount | Surface Mount |
| User I/Os (maximum, family) | — | Up to 684 |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |