RTAX2000SL-1CQ352PROTO vs RTAX2000DL-CQ352B 比較
詳細な並列比較: RTAX2000SL-1CQ352PROTO メーカー: Microchip Technology および RTAX2000DL-CQ352B メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX2000SL-1CQ352PROTO - 2M-Gate Rad-Tolerant FPGA | Actel
RTAX2000SL-1CQ352PROTO ✓ 生産中Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ 生産中仕様比較
| パラメータ | RTAX2000SL-1CQ352PROTO | RTAX2000DL-CQ352B |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| Logic Cells | 32,256 | [DATA_NEEDED: Logic Cells] |
| ASIC Gate Equivalent | 250,000 | — |
| Process Technology | CMOS, antifuse interconnect | — |
| パッケージ | CQFP-352 (ceramic quad flat pack) | 352-terminal ceramic CQFP, metal-sealed |
| Terminal Pitch | 0.500 mm | 0.500 mm |
| Programmability | One-Time Programmable (antifuse, OTP) | — |
| Configuration | Live at power-up, single-chip | Live at power-up, no external boot PROM required |
| Embedded Memory | Embedded SRAM with FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Variant Designation | PROTO (prototyping device) | — |
| 動作温度 | [DATA_NEEDED: operating temperature range for PROTO variant] | [DATA_NEEDED: Operating Temperature Range] |
| Core Voltage | [DATA_NEEDED: core supply voltage] | — |
| I/O Voltage | [DATA_NEEDED: I/O supply voltage] | — |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | — |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Application Domain | — | Space flight systems |