RTAX2000SL-1CQ352PROTO vs RTAX2000DL-CQ352B 비교
다음의 상세 나란히 비교: RTAX2000SL-1CQ352PROTO 제조: Microchip Technology 및 RTAX2000DL-CQ352B 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Microchip Technology
RTAX2000SL-1CQ352PROTO - 2M-Gate Rad-Tolerant FPGA | Actel
RTAX2000SL-1CQ352PROTO ✓ 활성Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ 활성사양 비교
| 파라미터 | RTAX2000SL-1CQ352PROTO | RTAX2000DL-CQ352B |
|---|---|---|
| 브랜드 | Microchip Technology | Microchip Technology |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| Logic Cells | 32,256 | [DATA_NEEDED: Logic Cells] |
| ASIC Gate Equivalent | 250,000 | — |
| Process Technology | CMOS, antifuse interconnect | — |
| 패키지 | CQFP-352 (ceramic quad flat pack) | 352-terminal ceramic CQFP, metal-sealed |
| Terminal Pitch | 0.500 mm | 0.500 mm |
| Programmability | One-Time Programmable (antifuse, OTP) | — |
| Configuration | Live at power-up, single-chip | Live at power-up, no external boot PROM required |
| Embedded Memory | Embedded SRAM with FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Variant Designation | PROTO (prototyping device) | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range for PROTO variant] | [DATA_NEEDED: Operating Temperature Range] |
| Core Voltage | [DATA_NEEDED: core supply voltage] | — |
| I/O Voltage | [DATA_NEEDED: I/O supply voltage] | — |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | — |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Application Domain | — | Space flight systems |