2EDL8023GXUMA1 - 120V Boot, 3A/4A Half-Bridge Gate Driver | Infineon
部品番号: 2EDL8023GXUMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.84 | $920.00 |
| 1,000 | $1.52 | $1,520.00 |
2EDL8023GXUMA1 概要
A gate driver is a power-management IC whose job is to translate the low-power PWM signal from a controller into the high-current, level-shifted gate-drive waveform required to switch the power MOSFETs in a switching converter. The 2EDL8023 sits in the driver family within the broader power-management IC category, which itself is part of the analog and mixed-signal semiconductor taxonomy. Junction isolation, as opposed to level-shifting high-voltage capacitors, gives the part robust common-mode transient immunity and removes the bootstrap-diode external component cost.
Key specifications include a 120 V maximum bootstrap (high-side drain) rating, ±2 ns typical propagation delay matching between the two channels, less than 5 ns channel-to-channel mismatch, an integrated 120 V bootstrap diode, and TTL-compatible logic inputs with internal pull-down. The non-inverting input stage accepts 3.3 V or 5 V PWM directly from a digital controller. The exposed thermal pad on PG-VDSON-8-4 gives an RθJA around 40 C/W, which is sufficient for switching frequencies up to 1 MHz at moderate gate-charge loads.
Typical applications include CPU/GPU VRM buck converters, telecom 48 V intermediate bus converters, server point-of-load regulators, industrial motor-drive half-bridges, solar micro-inverters, and USB-PD/EPR high-density adapters. Designers choose the 2EDL8023GXUMA1 when they need a small-footprint, AEC-Q100-capable driver that replaces a discrete bootstrap-diode + isolated-gate-driver implementation. The integrated bootstrap diode and 4 A sink capability also support high-Qg GaN HEMTs at switching frequencies above 500 kHz.
A critical design consideration is PCB layout: the high-side bootstrap capacitor must be placed within 2 mm of the BST and HS pins, and the gate-drive return path (low-side source connection) must be a Kelvin connection to the GND pin to avoid ground bounce during the 4 A sink transition. Place a 1 µF X7R ceramic directly on VCC and a 100 nF on VBS for stable operation across the full temperature range.
ドロップイン代替品: 2EDL8023GXUMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 2EDL8023GXUMA1 （同一形状・フットプリント） — 相違点: Package, Input Type, Bootstrap Diode, Number of Drivers, Operating Temperature.
クイック比較ツール — 並列比較する代替部品を選択:
2EDL8024GXUMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →2EDL8123GXUMA1
✅ ドロップイン✓ 在庫あり
$0.58 / 個
データシートを見る →2EDL8023G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
2EDL8023GXUMA1 最大定格＆電気的特性
| Driver Configuration | Half-bridge (high-side + low-side) |
| Number of Drivers | 2 |
| Input Type | Non-inverting, TTL-compatible |
| Peak Source Current | 3 A |
| Peak Sink Current | 4 A |
| Maximum Bootstrap Voltage | 120 V |
| VCC Supply Range | 8 V to 17 V |
| Channel-to-Channel Delay Match | ±2 ns |
| Bootstrap Diode | Integrated, 120 V rated |
| Undervoltage Lockout (VCC) | Yes (internal) |
| Undervoltage Lockout (VBS) | Yes (internal) |
| 動作温度 | -40C to +125C |
| パッケージ | PG-VDSON-8-4 (DSO-8 with exposed thermal pad) |
| 実装タイプ | Surface Mount |
| Isolation Technology | Junction isolation |
| RoHS ステータス | Compliant |
2EDL8023GXUMA1 ピン構成
| ピン 1 | HIN — High-side logic input (TTL, non-inverting, internal pull-down) |
| ピン 2 | LIN — Low-side logic input (TTL, non-inverting, internal pull-down) |
| ピン 3 | VCC — Logic and gate-drive supply voltage (8 V to 17 V) |
| ピン 4 | GND — Ground reference for both logic and low-side gate driver |
| ピン 5 | LO — Low-side gate-drive output (3 A source / 4 A sink) |
| ピン 6 | HS — High-side source / switching node return |
| ピン 7 | HO — High-side gate-drive output (3 A source / 4 A sink, level shifted to BST/HS) |
| ピン 8 | BST — Bootstrap supply rail for high-side driver (with integrated 120 V diode to VCC) |
| ピン EP | Thermal Pad — Exposed thermal pad - must be soldered to PCB copper and connected to GND |
主な用途
2EDL8023GXUMA1 の用途: 7 件s: Synchronous Buck DC-DC Converters, Telecom 48 V Intermediate Bus Converters, Industrial Motor Drive Half-Bridges, Solar Micro-Inverter Power Stage, USB-PD and EPR High-Density Adapters, Server Point-of-Load Regulators, Class-D Audio Amplifier Output Stage.
Synchronous Buck DC-DC Converters
The 2EDL8023GXUMA1 drives the high-side and low-side N-channel MOSFETs of a synchronous buck converter in VRM, POL, and intermediate-bus architectures. Its 3 A source / 4 A sink capability and integrated 120 V bootstrap diode simplify the power stage, while the ±2 ns channel match preserves the dead-time accuracy critical for 500 kHz to 1 MHz switching frequencies. Designers pair this driver with a digital PWM controller to achieve high step-down ratios in CPU/GPU and ASIC power rails.
おすすめ
Telecom 48 V Intermediate Bus Converters
In 48 V telecom and datacom power systems, the 2EDL8023GXUMA1 drives the primary-side half-bridge of an LLC or hard-switched intermediate bus converter stepping 48 V down to 12 V or 5 V. The 120 V bootstrap rating comfortably exceeds the maximum bus transients encountered on -48 V nominal inputs. The non-inverting TTL inputs connect directly to digital controllers, and the small PG-VDSON-8-4 footprint enables high-density PCB layouts for blade-server and ORV3 power shelves.
おすすめ
Industrial Motor Drive Half-Bridges
The 2EDL8023GXUMA1 is well suited for half-bridge stages of low-voltage industrial motor drives, including 24 V and 48 V brushed-DC and stepper drivers. The 4 A sink capability supports fast turn-off of the low-side MOSFET, minimizing switching losses and reducing motor winding voltage spikes. Its junction isolation technology provides robust common-mode noise immunity in motor environments where dv/dt can exceed 50 kV/µs, and the wide 8 V to 17 V VCC range allows direct operation from a 12 V or 15 V auxiliary rail.
おすすめ
Solar Micro-Inverter Power Stage
In sub-300 W solar micro-inverters and optimizers, the 2EDL8023GXUMA1 drives the primary-side MOSFETs of a push-pull or half-bridge isolated DC-DC converter that feeds a downstream inverter stage. The integrated 120 V bootstrap diode removes the need for a discrete high-voltage diode on the high-side supply rail, simplifying layout and reducing leakage inductance. Its junction-isolated level shifter withstands the high common-mode dv/dt generated by the resonant tank during MPPT transitions.
おすすめ
USB-PD and EPR High-Density Adapters
The 2EDL8023GXUMA1 drives the active-clamp flyback or totem-pole PFC primary switches in 65 W to 240 W USB-PD and Extended Power Range adapters. Its compact PG-VDSON-8-4 package enables dense flyback layouts where board area is at a premium. The 4 A sink current ensures fast turn-off of the GaN HEMT primary switch, minimizing switching loss and improving adapter efficiency to meet the 95% EU CoC Tier 2 and DOE Level VI requirements.
おすすめ
Server Point-of-Load Regulators
The 2EDL8023GXUMA1 powers multi-phase buck converters in server CPU and ASIC point-of-load regulators, where each phase requires a precisely matched gate driver to minimize circulating current. The ±2 ns channel-to-channel delay match keeps interphase current imbalance below 5%, which is essential for thermal balancing in high-current VRMs. The driver operates from a 12 V intermediate bus commonly available in server backplanes, and its small footprint allows placement adjacent to each phase MOSFET for shortest gate-drive loops.
おすすめ
Class-D Audio Amplifier Output Stage
The 2EDL8023GXUMA1 drives the half-bridge output stage of Class-D audio amplifiers where high switching frequency (250 kHz to 500 kHz) and tight dead-time control preserve audio fidelity. The driver's matched propagation delay and 4 A sink capability allow accurate dead-time insertion, minimizing crossover distortion that would otherwise degrade THD+N performance. Its small footprint fits easily behind the output LC filter on the amplifier's main board.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 2EDL8023GXUMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 2EDL8024GXUMA1 | 2EDL8123GXUMA1 | 2EDL8023G |
|---|---|---|---|---|
| Package | PG-VDSON-8-4 | PG-VDSON-8-4 - same | PG-VDSON-8-4 - same | PG-VDSON-8-4 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Driver Configuration | Half-bridge | Half-bridge | Half-bridge | Half-bridge |
| Maximum Bootstrap Voltage | 120 V | 120 V | 120 V | 120 V |
| Integrated Bootstrap Diode | Yes (120 V) | Yes (120 V) | Yes | Yes (120 V) |
| VCC Supply Range | 8 V to 17 V | 8 V to 17 V | 8 V to 17 V | 8 V to 17 V |
| Logic Input Compatibility | TTL (3.3 V / 5 V) | TTL | TTL | TTL |
主な差別化要因
- Integrated 120 V bootstrap diode in PG-VDSON-8-4 （vs Discrete bootstrap-diode plus half-bridge driver implementations)
- Junction isolation with ±2 ns channel match （vs Capacitive-isolation gate drivers in same package class)
- Pin-compatible 2EDL8023GXUMA1 to 2EDL8123GXUMA1 family （vs Proprietary half-bridge drivers from competing vendors)
設計ノート
Estimated: Place the high-side bootstrap capacitor (typically 100 nF X7R, 50 V or higher rated) within 2 mm of the BST and HS pins of the 2EDL8023GXUMA1. Keep the VCC decoupling capacitor (1 µF X7R minimum) within 1 mm of the VCC pin to GND. The exposed thermal pad must be soldered to a PCB copper area of at least 25 mm² on the top layer, with thermal vias connecting to inner ground planes, to keep junction temperature below 125 C at full 4 A sink operation.
Use a Kelvin (separate) ground trace for the low-side gate-driver return, connecting the GND pin directly to the source of the low-side MOSFET rather than sharing the high-current power ground. This avoids ground bounce during the 4 A sink transition, which can otherwise couple into the logic inputs and cause spurious triggering. Keep the HS node trace as short as possible to minimize parasitic inductance that rings during switching transitions.
Estimated: At 500 kHz switching frequency with 4 A gate drive, the 2EDL8023GXUMA1 dissipates approximately 0.5 W in the gate-driver output stages. The PG-VDSON-8-4 package has an RθJA around 40 C/W on a 4-layer JEDEC test board, resulting in a 20 C junction temperature rise. At 1 MHz with continuous switching, dissipation roughly doubles - verify with the manufacturer's thermal characterization curves for your specific PCB copper area.
Do not exceed the 120 V maximum bootstrap voltage - this can occur in 100 V-rated designs with ringing on the switching node. Add a snubber or reduce switching-node dV/dt if measured transients approach 110 V. Also ensure the bootstrap capacitor refreshes during each low-side on-time; the 2EDL8023GXUMA1 refreshes via the integrated diode during LO high intervals, so continuous high-side operation (100% duty cycle) is not supported without an external refresh circuit.
コンプライアンス情報
RoHS and REACH compliance confirmed via Infineon product page and DigiKey listing. AEC-Q100 status not explicitly stated in the provided data - marked as not_qualified pending verification against the datasheet. Lead-free (Pb-free) packaging is standard for the PG-VDSON-8-4 variant.
