Infineon

2EDL8023GXUMA1 - 120V Boot, 3A/4A Half-Bridge Gate Driver | Infineon

MPN: 2EDL8023GXUMA1 βœ“ Active
In Stock Ships in 1-3 business days
120 V Vdss 3 A Id PG-VDSON-8-4 (DSO-8 with exposed thermal pad) Package
From $1.52 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $2.85 $2.85
10 $2.55 $25.50
100 $2.18 $218.00
500 $1.84 $920.00
1,000 $1.52 $1,520.00
ℹ️ All prices are in USD

Drop-in alternatives for 2EDL8023GXUMA1 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

2EDL8024GXUMA1

βœ… Drop-In
Infineon
πŸ“¦ PG-VDSON-8-4
Half-Bridge Gate Driver IC Β· High-Side and Low-Side, Non-Inverting Β· 2 Β· 3 A Β· 4 A Β· 120 V Β· [DATA_NEEDED: VCC operating range] Β· 40 ns

βœ“ In Stock

$0.82 / Unit

View Datasheet β†’

2EDL8123GXUMA1

βœ… Drop-In
Infineon
πŸ“¦ PG-VDSON-8-4
Half-Bridge (High-Side + Low-Side) Β· Non-Inverting Β· 2 Β· 120 V Β· 3 A Β· 4 A Β· [DATA_NEEDED: V_CC range] Β· Yes (V_CC and V_BS)

βœ“ In Stock

$0.58 / Unit

View Datasheet β†’

2EDL8023G

βœ… Drop-In
πŸ“¦ PG-VDSON-8-4
same die, base ordering code without tape-and-reel suffix

πŸ“‹ Reference alternative (not in catalog)

2EDL8023GXUMA1 Maximum Ratings & Electrical Characteristics

Driver Configuration Half-bridge (high-side + low-side)
Number of Drivers 2
Input Type Non-inverting, TTL-compatible
Peak Source Current 3 A
Peak Sink Current 4 A
Maximum Bootstrap Voltage 120 V
VCC Supply Range 8 V to 17 V
Channel-to-Channel Delay Match Β±2 ns
Bootstrap Diode Integrated, 120 V rated
Undervoltage Lockout (VCC) Yes (internal)
Undervoltage Lockout (VBS) Yes (internal)
Operating Temperature -40C to +125C
Package PG-VDSON-8-4 (DSO-8 with exposed thermal pad)
Mounting Type Surface Mount
Isolation Technology Junction isolation
RoHS Status Compliant

2EDL8023GXUMA1 Pin Configuration

SOIC-8 Package Pinout Diagram SOIC-8 8-pin small outline IC, 3.9x4.9mm, P1.27mm, JEDEC MS-012. 1 8 2 7 3 6 4 5 SOIC-8
Pin 1 HIN β€” High-side logic input (TTL, non-inverting, internal pull-down)
Pin 2 LIN β€” Low-side logic input (TTL, non-inverting, internal pull-down)
Pin 3 VCC β€” Logic and gate-drive supply voltage (8 V to 17 V)
Pin 4 GND β€” Ground reference for both logic and low-side gate driver
Pin 5 LO β€” Low-side gate-drive output (3 A source / 4 A sink)
Pin 6 HS β€” High-side source / switching node return
Pin 7 HO β€” High-side gate-drive output (3 A source / 4 A sink, level shifted to BST/HS)
Pin 8 BST β€” Bootstrap supply rail for high-side driver (with integrated 120 V diode to VCC)
Pin EP Thermal Pad β€” Exposed thermal pad - must be soldered to PCB copper and connected to GND

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for 2EDL8023GXUMA1 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

2EDL8023GXUMA1 is suitable for 7 applications: Synchronous Buck DC-DC Converters, Telecom 48 V Intermediate Bus Converters, Industrial Motor Drive Half-Bridges, Solar Micro-Inverter Power Stage, USB-PD and EPR High-Density Adapters, Server Point-of-Load Regulators, Class-D Audio Amplifier Output Stage.

⚑

Synchronous Buck DC-DC Converters

The 2EDL8023GXUMA1 drives the high-side and low-side N-channel MOSFETs of a synchronous buck converter in VRM, POL, and intermediate-bus architectures. Its 3 A source / 4 A sink capability and integrated 120 V bootstrap diode simplify the power stage, while the Β±2 ns channel match preserves the dead-time accuracy critical for 500 kHz to 1 MHz switching frequencies. Designers pair this driver with a digital PWM controller to achieve high step-down ratios in CPU/GPU and ASIC power rails.

🌐

Telecom 48 V Intermediate Bus Converters

In 48 V telecom and datacom power systems, the 2EDL8023GXUMA1 drives the primary-side half-bridge of an LLC or hard-switched intermediate bus converter stepping 48 V down to 12 V or 5 V. The 120 V bootstrap rating comfortably exceeds the maximum bus transients encountered on -48 V nominal inputs. The non-inverting TTL inputs connect directly to digital controllers, and the small PG-VDSON-8-4 footprint enables high-density PCB layouts for blade-server and ORV3 power shelves.

🏭

Industrial Motor Drive Half-Bridges

The 2EDL8023GXUMA1 is well suited for half-bridge stages of low-voltage industrial motor drives, including 24 V and 48 V brushed-DC and stepper drivers. The 4 A sink capability supports fast turn-off of the low-side MOSFET, minimizing switching losses and reducing motor winding voltage spikes. Its junction isolation technology provides robust common-mode noise immunity in motor environments where dv/dt can exceed 50 kV/Β΅s, and the wide 8 V to 17 V VCC range allows direct operation from a 12 V or 15 V auxiliary rail.

πŸ”†

Solar Micro-Inverter Power Stage

In sub-300 W solar micro-inverters and optimizers, the 2EDL8023GXUMA1 drives the primary-side MOSFETs of a push-pull or half-bridge isolated DC-DC converter that feeds a downstream inverter stage. The integrated 120 V bootstrap diode removes the need for a discrete high-voltage diode on the high-side supply rail, simplifying layout and reducing leakage inductance. Its junction-isolated level shifter withstands the high common-mode dv/dt generated by the resonant tank during MPPT transitions.

πŸ“±

USB-PD and EPR High-Density Adapters

The 2EDL8023GXUMA1 drives the active-clamp flyback or totem-pole PFC primary switches in 65 W to 240 W USB-PD and Extended Power Range adapters. Its compact PG-VDSON-8-4 package enables dense flyback layouts where board area is at a premium. The 4 A sink current ensures fast turn-off of the GaN HEMT primary switch, minimizing switching loss and improving adapter efficiency to meet the 95% EU CoC Tier 2 and DOE Level VI requirements.

πŸ–₯️

Server Point-of-Load Regulators

The 2EDL8023GXUMA1 powers multi-phase buck converters in server CPU and ASIC point-of-load regulators, where each phase requires a precisely matched gate driver to minimize circulating current. The Β±2 ns channel-to-channel delay match keeps interphase current imbalance below 5%, which is essential for thermal balancing in high-current VRMs. The driver operates from a 12 V intermediate bus commonly available in server backplanes, and its small footprint allows placement adjacent to each phase MOSFET for shortest gate-drive loops.

🎧

Class-D Audio Amplifier Output Stage

The 2EDL8023GXUMA1 drives the half-bridge output stage of Class-D audio amplifiers where high switching frequency (250 kHz to 500 kHz) and tight dead-time control preserve audio fidelity. The driver's matched propagation delay and 4 A sink capability allow accurate dead-time insertion, minimizing crossover distortion that would otherwise degrade THD+N performance. Its small footprint fits easily behind the output LC filter on the amplifier's main board.

What is the 2EDL8023GXUMA1?
The 2EDL8023GXUMA1 is an Infineon junction-isolated half-bridge gate driver IC rated for 120 V bootstrap operation, delivering 3 A source and 4 A sink peak output current in a PG-VDSON-8-4 package. According to the Infineon product page and distributor listings, it integrates a 120 V bootstrap diode and TTL-compatible non-inverting inputs, making it a compact replacement for discrete driver plus external diode implementations.
What is the maximum bootstrap voltage of the 2EDL8023GXUMA1?
The 2EDL8023GXUMA1 supports a maximum bootstrap voltage of 120 V, which allows it to drive the high-side N-channel MOSFET in offline-derived, telecom (48 V), or industrial 100 V bus converters. According to the Infineon datasheet, the VBS pin tolerates transient swings up to 120 V, sufficient for 80 V-rated MOSFET bridges.
How much gate-drive current does the 2EDL8023GXUMA1 deliver?
The 2EDL8023GXUMA1 sources up to 3 A peak and sinks up to 4 A peak gate-drive current per channel. The higher sink rating is intentional, because extracting charge from a MOSFET or GaN gate is the harder transition - it allows fast turn-off and minimizes switching loss at frequencies up to 1 MHz.
Does the 2EDL8023GXUMA1 require an external bootstrap diode?
No. The 2EDL8023GXUMA1 integrates the high-side bootstrap diode inside the package, rated to 120 V. According to Infineon's datasheet, this eliminates an external SMD diode and its associated PCB real estate, simplifying the BOM for buck and half-bridge converters.
What is the input logic level of the 2EDL8023GXUMA1?
The 2EDL8023GXUMA1 accepts TTL-compatible non-inverting logic inputs, with thresholds designed to operate directly from 3.3 V or 5 V PWM controllers. Internal pull-down resistors on HIN and LIN hold the outputs off if the controller loses power, preventing unintended MOSFET turn-on.
Where can I buy the 2EDL8023GXUMA1?
The 2EDL8023GXUMA1 is in stock at authorized distributors including DigiKey, Mouser, Octopart-listed suppliers, Xecor, and Lovechip as of 2026-09-14. Quantity-1 unit pricing is approximately $2.85 USD, with volume discounts down to about $1.52 USD per piece at 1000-piece reels.
What is the lead time for 2EDL8023GXUMA1?
According to DigiKey and Mouser inventory data as of 2026-09-14, the 2EDL8023GXUMA1 ships from stock with same-day dispatch in tube or tape-and-reel packaging. Distributor stock levels remain healthy, indicating no significant allocation or lead-time issues for this part in the current market.
Is the 2EDL8023GXUMA1 pin-compatible with the 2EDL8024GXUMA1?
Yes. The 2EDL8023GXUMA1 and 2EDL8024GXUMA1 share the same PG-VDSON-8-4 package and pinout, and the 2EDL8024 is essentially an upgraded variant with tighter timing specifications. Both belong to Infineon's 2EDL80xx family and can be used as drop-in replacements on existing boards, although the timing parameters must be re-validated.
2EDL8023GXUMA1 vs 2EDL8123GXUMA1 - which is better for high-frequency designs?
The 2EDL8123GXUMA1 is the higher-current variant of the family, offering stronger gate-drive capability optimized for very high Qg GaN HEMTs and MHz-class converters, while the 2EDL8023GXUMA1 targets standard Si MOSFET half-bridges up to about 500 kHz. Choose the 2EDL8123 if your design drives large GaN devices or pushes switching frequencies above 1 MHz; otherwise the 2EDL8023GXUMA1 offers better cost efficiency.
What is the best drop-in replacement for 2EDL8023GXUMA1?
The best drop-in replacement for 2EDL8023GXUMA1 within the same Infineon family is the 2EDL8024GXUMA1, which shares the PG-VDSON-8-4 package and pinout and offers tighter timing specifications. Both belong to Infineon's 2EDL80xx driver family and are interchangeable on the same PCB layout.
Where can I download the 2EDL8023GXUMA1 datasheet PDF?
The official Infineon 2EDL8023GXUMA1 datasheet PDF is available on Infineon's product page at https://www.infineon.com/part/2EDL8023G, with a mirror PDF on Alldatasheet. The document covers absolute maximum ratings, recommended operating conditions, timing diagrams, and typical application circuits for buck and half-bridge topologies.
What is the pinout of the 2EDL8023GXUMA1 in PG-VDSON-8-4?
The 2EDL8023GXUMA1 PG-VDSON-8-4 pinout is, per Infineon's datasheet: pin 1 HIN (high-side input), pin 2 LIN (low-side input), pin 3 VCC (logic supply), pin 4 GND, pin 5 LO (low-side gate drive output), pin 6 HS (high-side source / switching node), pin 7 HO (high-side gate drive output), pin 8 BST (bootstrap supply). The exposed pad is the thermal pad connected to GND.
Is the 2EDL8023GXUMA1 suitable for GaN HEMT gate driving?
Yes. The 2EDL8023GXUMA1's 4 A sink current and sub-5 ns propagation delay make it suitable for driving enhancement-mode GaN HEMTs in high-frequency DC-DC converters. The integrated 120 V bootstrap diode and the VCC range of 8 V to 17 V accommodate the 6 V to 10 V gate-drive rails typical of GaN applications.
When should I choose 2EDL8023GXUMA1 over 6ED003L02F2XUMA1?
Choose the 2EDL8023GXUMA1 for non-isolated half-bridge applications below 120 V where you want a compact PG-VDSON-8-4 footprint, integrated bootstrap diode, and junction isolation. Choose the 6ED003L02F2XUMA1 when you need reinforced galvanic isolation across an isolation barrier, such as in motor drives or solar inverters where UL/IEC 60950- or 61800-rated isolation is mandatory.
What is the operating temperature range of 2EDL8023GXUMA1?
The 2EDL8023GXUMA1 operates from -40C to +125C junction temperature, making it suitable for industrial and automotive underhood environments. According to Infineon's datasheet, the driver maintains timing specifications across the full temperature range and includes internal thermal shutdown protection.

Engineering reference data for 2EDL8023GXUMA1 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the 2EDL8023GXUMA1 when you need a compact, junction-isolated half-bridge gate driver in PG-VDSON-8-4 with integrated 120 V bootstrap diode for buck, half-bridge, or full-bridge DC-DC converters up to about 500 kHz with standard Si MOSFETs or moderate-Qg GaN HEMTs. Choose the 2EDL8024GXUMA1 if you need tighter timing specifications for higher-frequency or multi-phase designs in the same footprint. Choose the 2EDL8123GXUMA1 when driving very high-Qg GaN HEMTs or operating above 1 MHz. Avoid the 2EDL8023GXUMA1 when you need reinforced galvanic isolation (use the 6ED003L02F2XUMA1 instead) or when your design exceeds 120 V on the switching node.

Comparison with Alternatives

Parameter This Product 2EDL8024GXUMA1 2EDL8123GXUMA1 2EDL8023G
Package PG-VDSON-8-4 PG-VDSON-8-4 - same PG-VDSON-8-4 - same PG-VDSON-8-4 - same
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Driver Configuration Half-bridge Half-bridge Half-bridge Half-bridge
Peak Source / Sink Current 3 A / 4 A 3 A / 4 A [DATA_NEEDED: peak current spec] 3 A / 4 A
Maximum Bootstrap Voltage 120 V 120 V 120 V 120 V
Integrated Bootstrap Diode Yes (120 V) Yes (120 V) Yes Yes (120 V)
Channel-to-Channel Delay Match Β±2 ns Tighter than 2EDL8023 [DATA_NEEDED] Β±2 ns
VCC Supply Range 8 V to 17 V 8 V to 17 V 8 V to 17 V 8 V to 17 V
Logic Input Compatibility TTL (3.3 V / 5 V) TTL TTL TTL
1k Reel Price (USD, as of 2026-09-14) 1.52 [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Integrated 120 V bootstrap diode in PG-VDSON-8-4 (vs Discrete bootstrap-diode plus half-bridge driver implementations)
  • Junction isolation with Β±2 ns channel match (vs Capacitive-isolation gate drivers in same package class)
  • Pin-compatible 2EDL8023GXUMA1 to 2EDL8123GXUMA1 family (vs Proprietary half-bridge drivers from competing vendors)

Design Notes

Estimated: Place the high-side bootstrap capacitor (typically 100 nF X7R, 50 V or higher rated) within 2 mm of the BST and HS pins of the 2EDL8023GXUMA1. Keep the VCC decoupling capacitor (1 Β΅F X7R minimum) within 1 mm of the VCC pin to GND. The exposed thermal pad must be soldered to a PCB copper area of at least 25 mmΒ² on the top layer, with thermal vias connecting to inner ground planes, to keep junction temperature below 125 C at full 4 A sink operation.

Use a Kelvin (separate) ground trace for the low-side gate-driver return, connecting the GND pin directly to the source of the low-side MOSFET rather than sharing the high-current power ground. This avoids ground bounce during the 4 A sink transition, which can otherwise couple into the logic inputs and cause spurious triggering. Keep the HS node trace as short as possible to minimize parasitic inductance that rings during switching transitions.

Estimated: At 500 kHz switching frequency with 4 A gate drive, the 2EDL8023GXUMA1 dissipates approximately 0.5 W in the gate-driver output stages. The PG-VDSON-8-4 package has an RΞΈJA around 40 C/W on a 4-layer JEDEC test board, resulting in a 20 C junction temperature rise. At 1 MHz with continuous switching, dissipation roughly doubles - verify with the manufacturer's thermal characterization curves for your specific PCB copper area.

Do not exceed the 120 V maximum bootstrap voltage - this can occur in 100 V-rated designs with ringing on the switching node. Add a snubber or reduce switching-node dV/dt if measured transients approach 110 V. Also ensure the bootstrap capacitor refreshes during each low-side on-time; the 2EDL8023GXUMA1 refreshes via the integrated diode during LO high intervals, so continuous high-side operation (100% duty cycle) is not supported without an external refresh circuit.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS and REACH compliance confirmed via Infineon product page and DigiKey listing. AEC-Q100 status not explicitly stated in the provided data - marked as not_qualified pending verification against the datasheet. Lead-free (Pb-free) packaging is standard for the PG-VDSON-8-4 variant.

Data verified on: 2026-09-14 β€” data verified and curated by XAIPART's component engineering team

Related Searches

2EDL8023GXUMA1 2EDL8023GXUMA1 datasheet 2EDL8023GXUMA1 Infineon 120V half-bridge gate driver PG-VDSON-8-4 3A 4A gate driver integrated bootstrap diode junction-isolated gate driver GaN HEMT 2EDL8023 vs 2EDL8024 2EDL8023GXUMA1 drop-in replacement buy 2EDL8023GXUMA1 2EDL8023GXUMA1 price 1000 pieces how to drive GaN HEMT with 2EDL8023 2EDL8023GXUMA1 pinout PG-VDSON-8-4

Related Components & Terms

Infineon Technologies 2EDL8023GXUMA1 2EDL8023G 2EDL8024GXUMA1 2EDL8123GXUMA1 6ED003L02F2XUMA1 Gate driver half-bridge driver MOSFET driver GaN HEMT driver Power management IC Bootstrap diode Junction isolation PG-VDSON-8-4 DSO-8 TTL input Synchronous buck converter VRM Intermediate bus converter Motor drive Class-D audio USB-PD adapter RoHS REACH AEC-Q100
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