ADP31100001RZ-AD - Dual 12 V MOSFET Driver | Analog Devices
部品番号: ADP31100001RZ-AD ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.0689 | $0.07 |
| 10 | $0.0689 | $0.69 |
| 100 | $0.0689 | $6.89 |
| 500 | $0.0689 | $34.45 |
| 1,000 | $0.0689 | $68.90 |
ADP31100001RZ-AD 概要
A MOSFET driver is an interface IC that converts a low-voltage control signal into the gate-drive voltages required by power MOSFETs. The driver category belongs to the interface-driver hierarchy, where a gate driver sits between a controller or digital logic and the switching devices in a power converter. The ADP3110 family is specifically described as a dual, high-voltage driver for two N-channel MOSFETs. Its bootstrapped architecture supports high-side and low-side operation in a nonisolated synchronous circuit, while the output-disable function provides a controlled way to inhibit switching outputs.
The verified product data confirms the ADP3110 function, dual-channel architecture, N-channel MOSFET compatibility, 12 V application class, output-disable feature, and nonisolated synchronous use case. It does not provide verified numerical limits for propagation delay, peak gate current, quiescent current, supply range, UVLO thresholds, operating temperature, or electrical performance over temperature. Those values should not be inferred from the 12 V descriptor. Use the official ADP3110 datasheet and the exact ADP31100001RZ-AD ordering information for those parameters.
Typical uses include 12 V synchronous power conversion, low- to intermediate-voltage buck or boost stages, MOSFET half-bridge control, and compact power modules where two N-channel switches are preferred. The output-disable pin can support fault handling or shutdown sequencing, while the dual driver reduces the number of discrete driver circuits required. The external MOSFETs still determine much of the switching performance, including voltage stress, current capability, gate charge, switching loss, and thermal behavior.
The principal design consideration is exact pinout and package verification. The supplied search results identify ADP31100001RZ-AD with Analog Devices in some listings and onsemi in related ADP31100001RZ listings, but the requested MPN includes the Analog Devices ordering suffix. Confirm the manufacturer, datasheet, package drawing, exposed-pad requirements, and recommended land pattern before ordering. Do not assume that a similarly named ADP31100001RZ listing has identical manufacturer documentation.
This page combines the verified distributor description, product-family function, application guidance, cross-reference status, and design cautions. Pricing and availability are presented only where the supplied search result provides a value, and all product specifications not explicitly present in the verified data remain marked for verification rather than being guessed.
ドロップイン代替品: ADP31100001RZ-AD — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ADP31100001RZ-AD （同一形状・フットプリント）.
クイック比較ツール — 並列比較する代替部品を選択:
ADP31100001RZ
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →ADP31100001RZ-AD 最大定格＆電気的特性
| Driver Type | Dual bootstrapped MOSFET driver |
| Number of Channels | 2 |
| MOSFET Compatibility | N-channel MOSFETs |
| Nominal Voltage Class | 12 V |
| Output Disable | Yes |
| Architecture | Nonisolated synchronous |
| High-Side Drive | Yes, based on bootstrapped dual-driver description |
| Low-Side Drive | Yes, based on dual-driver description |
| 実装タイプ | Surface mount |
ADP31100001RZ-AD standard ピン配置ガイド
ADP31100001RZ-AD (standard パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: ADP31100001RZ-AD.
詳細は データシート をご参照ください。
主な用途
ADP31100001RZ-AD の用途: 6 件s: 12 V Synchronous Buck Converter, 12 V Boost Power Stage, Nonisolated Half-Bridge Power Module, Compact 12 V Power Supply Module, MOSFET Switching in 12 V Industrial Control, Power-Conversion Development Board.
12 V Synchronous Buck Converter
ADP31100001RZ-AD fits a 12 V synchronous buck stage where two N-channel MOSFETs form the high-side and low-side switches. The dual bootstrapped architecture is suited to driving both devices from a controller while the output-disable function provides a controlled shutdown path. In implementation, the exact supply range, gate-drive current, dead-time behavior, and MOSFET gate-charge limits must come from the manufacturer datasheet. The driver does not replace the external MOSFETs, input capacitors, output capacitors, inductor, or controller. Its value is in reducing the number of discrete gate-drive channels while preserving independent high-side and low-side control for a nonisolated synchronous power stage.
おすすめ
12 V Boost Power Stage
ADP31100001RZ-AD can support a 12 V boost application when the external MOSFETs and controller are selected to match the required conversion ratio and output current. A dual driver is useful when the converter uses a synchronous arrangement or otherwise requires independent drive for two switching devices. The verified source identifies a dual bootstrapped N-channel MOSFET driver, but it does not provide input-voltage limits, propagation delay, peak gate current, or package pinout. Therefore, this application should be treated as a design candidate rather than an unconditional recommendation until the exact electrical ratings and land pattern are confirmed.
おすすめ
Nonisolated Half-Bridge Power Module
ADP31100001RZ-AD is applicable to a nonisolated half-bridge module in which two N-channel MOSFETs are switched in complementary or synchronous operation. The bootstrapped high-side drive and dedicated low-side drive reduce external driver-component count, while output disable can be wired into a controller fault path. Practical design work must include dead-time control, gate resistors, DC-knee and Miller-effect analysis, bootstrap-capacitor sizing, and thermal review. The verified data does not state the driver supply tolerance or propagation-delay matching, so those parameters must be verified before using the part in a safety- or timing-sensitive module.
おすすめ
Compact 12 V Power Supply Module
ADP31100001RZ-AD may be used in a compact 12 V power-supply module where two external N-channel MOSFETs form the synchronous switching network. Integrating the driver can reduce board area and simplify gate-drive routing compared with separate discrete driver circuits. The available result does not verify the package, pinout, supply range, current capability, or thermal resistance, so the physical implementation cannot be released from the supplied data alone. Use the official datasheet to confirm exposed-pad requirements, operating-temperature limits, and the recommended layout before placing the driver next to the power stage.
おすすめ
MOSFET Switching in 12 V Industrial Control
ADP31100001RZ-AD is a candidate for industrial-control power stages that switch 12 V-class loads using N-channel MOSFETs. The dual output arrangement can coordinate two switches when the controller needs independent high-side and low-side commands, and the output-disable function can provide an orderly inhibit path during shutdown. Industrial use also requires checking transient immunity, temperature range, isolation assumptions, and fault behavior; none of those ratings are present in the verified snippets. The part should be selected only after the controller timing, MOSFET voltage/current stress, and package details are verified against the exact manufacturer documentation.
おすすめ
Power-Conversion Development Board
ADP31100001RZ-AD can serve as a starting point for a power-conversion evaluation board when the designer needs a dual N-channel MOSFET drive function in a 12 V-class circuit. The driver helps separate low-power control signaling from the gate-drive path and allows the external switching devices to be selected according to current, resistance, and thermal requirements. Before fabrication, confirm the exact package and pinout, then lay out the high-current power loop separately from the gate-drive and control traces. The verified data supports the functional concept but does not provide the component dimensions, electrical limits, or reference design required for a production-ready board.
おすすめ
エンジニアリング参考データ: ADP31100001RZ-AD — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ADP31100001RZ |
|---|---|---|
| Device Type | Dual bootstrapped MOSFET driver | Dual 12 V FET driver |
| Channel Count | 2 | 2 |
| MOSFET Type | N-channel MOSFETs | N-channel MOSFETs |
| Voltage Class | 12 V | 12 V |
| Output Disable | Yes | Yes, based on the ADP3110 family description |
| Architecture | Nonisolated synchronous | Nonisolated synchronous |
主な差別化要因
- Dual-channel gate-drive architecture （vs ADP31100001RZ)
- N-channel MOSFET optimization （vs ADP31100001RZ)
- Integrated output-disable function （vs ADP31100001RZ)
- 12 V application designation （vs ADP31100001RZ)
設計ノート
Do not release the PCB until the exact ADP31100001RZ-AD package, pin numbering, exposed-pad requirements, and recommended land pattern have been confirmed. The supplied snippets describe a dual 12 V FET driver but do not provide a pinout or package drawing. Keep the high-current power loop compact and route gate-drive traces separately from sensitive control and feedback paths.
Use the external N-channel MOSFET ratings as part of the complete power design, including drain-source voltage, continuous current, pulse current, RDS(on), gate charge, and thermal resistance. The verified data establishes the driver is intended for two N-channel MOSFETs, but it does not provide gate-drive current or supply limits. Confirm those values before selecting gate resistors or bootstrap capacitors.
Do not assume that the similarly named ADP31100001RZ MPN is a drop-in replacement. Supplied results associate that related listing with onsemi, while ADP31100001RZ-AD is associated with Analog Devices in other listings. Verify manufacturer ownership, ordering suffix, pinout, package, electrical ratings, and lifecycle status before approving substitution or using either part interchangeably.
For a bootstrapped high-side circuit, follow the exact recommended bootstrap-capacitor and diode arrangement from the manufacturer datasheet. Keep the gate-drive loop short, use appropriate series gate resistors, and place the driver close to the MOSFET gates. These practices reduce switching-loop inductance and limit ringing, but capacitor and resistor values cannot be selected responsibly until the verified switching frequency, gate charge, and driver ratings are available.
コンプライアンス情報
The supplied verified results do not include manufacturer compliance declarations for ADP31100001RZ-AD. No compliance claim is inferred.
