ADP31100001RZ-AD - Dual 12 V MOSFET Driver | Analog Devices
料号： ADP31100001RZ-AD ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.0689 | $0.07 |
| 10 | $0.0689 | $0.69 |
| 100 | $0.0689 | $6.89 |
| 500 | $0.0689 | $34.45 |
| 1,000 | $0.0689 | $68.90 |
ADP31100001RZ-AD 概述
A MOSFET driver is an interface IC that converts a low-voltage control signal into the gate-drive voltages required by power MOSFETs. The driver category belongs to the interface-driver hierarchy, where a gate driver sits between a controller or digital logic and the switching devices in a power converter. The ADP3110 family is specifically described as a dual, high-voltage driver for two N-channel MOSFETs. Its bootstrapped architecture supports high-side and low-side operation in a nonisolated synchronous circuit, while the output-disable function provides a controlled way to inhibit switching outputs.
The verified product data confirms the ADP3110 function, dual-channel architecture, N-channel MOSFET compatibility, 12 V application class, output-disable feature, and nonisolated synchronous use case. It does not provide verified numerical limits for propagation delay, peak gate current, quiescent current, supply range, UVLO thresholds, operating temperature, or electrical performance over temperature. Those values should not be inferred from the 12 V descriptor. Use the official ADP3110 datasheet and the exact ADP31100001RZ-AD ordering information for those parameters.
Typical uses include 12 V synchronous power conversion, low- to intermediate-voltage buck or boost stages, MOSFET half-bridge control, and compact power modules where two N-channel switches are preferred. The output-disable pin can support fault handling or shutdown sequencing, while the dual driver reduces the number of discrete driver circuits required. The external MOSFETs still determine much of the switching performance, including voltage stress, current capability, gate charge, switching loss, and thermal behavior.
The principal design consideration is exact pinout and package verification. The supplied search results identify ADP31100001RZ-AD with Analog Devices in some listings and onsemi in related ADP31100001RZ listings, but the requested MPN includes the Analog Devices ordering suffix. Confirm the manufacturer, datasheet, package drawing, exposed-pad requirements, and recommended land pattern before ordering. Do not assume that a similarly named ADP31100001RZ listing has identical manufacturer documentation.
This page combines the verified distributor description, product-family function, application guidance, cross-reference status, and design cautions. Pricing and availability are presented only where the supplied search result provides a value, and all product specifications not explicitly present in the verified data remain marked for verification rather than being guessed.
直接替换替代料： ADP31100001RZ-AD ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
ADP31100001RZ
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联系询价
查看数据手册 →ADP31100001RZ-AD 最大额定值与电气特性
| Driver Type | Dual bootstrapped MOSFET driver |
| Number of Channels | 2 |
| MOSFET Compatibility | N-channel MOSFETs |
| Nominal Voltage Class | 12 V |
| Output Disable | Yes |
| Architecture | Nonisolated synchronous |
| High-Side Drive | Yes, based on bootstrapped dual-driver description |
| Low-Side Drive | Yes, based on dual-driver description |
| 安装类型 | Surface mount |
ADP31100001RZ-AD standard 引脚配置指南
ADP31100001RZ-AD（standard 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： ADP31100001RZ-AD.
请参阅 数据手册 以查看完整引脚配置。
典型应用
ADP31100001RZ-AD 适用于 6 应用s: 12 V Synchronous Buck Converter, 12 V Boost Power Stage, Nonisolated Half-Bridge Power Module, Compact 12 V Power Supply Module, MOSFET Switching in 12 V Industrial Control, Power-Conversion Development Board.
12 V Synchronous Buck Converter
ADP31100001RZ-AD fits a 12 V synchronous buck stage where two N-channel MOSFETs form the high-side and low-side switches. The dual bootstrapped architecture is suited to driving both devices from a controller while the output-disable function provides a controlled shutdown path. In implementation, the exact supply range, gate-drive current, dead-time behavior, and MOSFET gate-charge limits must come from the manufacturer datasheet. The driver does not replace the external MOSFETs, input capacitors, output capacitors, inductor, or controller. Its value is in reducing the number of discrete gate-drive channels while preserving independent high-side and low-side control for a nonisolated synchronous power stage.
推荐
12 V Boost Power Stage
ADP31100001RZ-AD can support a 12 V boost application when the external MOSFETs and controller are selected to match the required conversion ratio and output current. A dual driver is useful when the converter uses a synchronous arrangement or otherwise requires independent drive for two switching devices. The verified source identifies a dual bootstrapped N-channel MOSFET driver, but it does not provide input-voltage limits, propagation delay, peak gate current, or package pinout. Therefore, this application should be treated as a design candidate rather than an unconditional recommendation until the exact electrical ratings and land pattern are confirmed.
推荐
Nonisolated Half-Bridge Power Module
ADP31100001RZ-AD is applicable to a nonisolated half-bridge module in which two N-channel MOSFETs are switched in complementary or synchronous operation. The bootstrapped high-side drive and dedicated low-side drive reduce external driver-component count, while output disable can be wired into a controller fault path. Practical design work must include dead-time control, gate resistors, DC-knee and Miller-effect analysis, bootstrap-capacitor sizing, and thermal review. The verified data does not state the driver supply tolerance or propagation-delay matching, so those parameters must be verified before using the part in a safety- or timing-sensitive module.
推荐
Compact 12 V Power Supply Module
ADP31100001RZ-AD may be used in a compact 12 V power-supply module where two external N-channel MOSFETs form the synchronous switching network. Integrating the driver can reduce board area and simplify gate-drive routing compared with separate discrete driver circuits. The available result does not verify the package, pinout, supply range, current capability, or thermal resistance, so the physical implementation cannot be released from the supplied data alone. Use the official datasheet to confirm exposed-pad requirements, operating-temperature limits, and the recommended layout before placing the driver next to the power stage.
推荐
MOSFET Switching in 12 V Industrial Control
ADP31100001RZ-AD is a candidate for industrial-control power stages that switch 12 V-class loads using N-channel MOSFETs. The dual output arrangement can coordinate two switches when the controller needs independent high-side and low-side commands, and the output-disable function can provide an orderly inhibit path during shutdown. Industrial use also requires checking transient immunity, temperature range, isolation assumptions, and fault behavior; none of those ratings are present in the verified snippets. The part should be selected only after the controller timing, MOSFET voltage/current stress, and package details are verified against the exact manufacturer documentation.
推荐
Power-Conversion Development Board
ADP31100001RZ-AD can serve as a starting point for a power-conversion evaluation board when the designer needs a dual N-channel MOSFET drive function in a 12 V-class circuit. The driver helps separate low-power control signaling from the gate-drive path and allows the external switching devices to be selected according to current, resistance, and thermal requirements. Before fabrication, confirm the exact package and pinout, then lay out the high-current power loop separately from the gate-drive and control traces. The verified data supports the functional concept but does not provide the component dimensions, electrical limits, or reference design required for a production-ready board.
推荐
工程参考数据： ADP31100001RZ-AD ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | ADP31100001RZ |
|---|---|---|
| Device Type | Dual bootstrapped MOSFET driver | Dual 12 V FET driver |
| Channel Count | 2 | 2 |
| MOSFET Type | N-channel MOSFETs | N-channel MOSFETs |
| Voltage Class | 12 V | 12 V |
| Output Disable | Yes | Yes, based on the ADP3110 family description |
| Architecture | Nonisolated synchronous | Nonisolated synchronous |
关键差异点
- Dual-channel gate-drive architecture （对比 ADP31100001RZ)
- N-channel MOSFET optimization （对比 ADP31100001RZ)
- Integrated output-disable function （对比 ADP31100001RZ)
- 12 V application designation （对比 ADP31100001RZ)
设计说明
Do not release the PCB until the exact ADP31100001RZ-AD package, pin numbering, exposed-pad requirements, and recommended land pattern have been confirmed. The supplied snippets describe a dual 12 V FET driver but do not provide a pinout or package drawing. Keep the high-current power loop compact and route gate-drive traces separately from sensitive control and feedback paths.
Use the external N-channel MOSFET ratings as part of the complete power design, including drain-source voltage, continuous current, pulse current, RDS(on), gate charge, and thermal resistance. The verified data establishes the driver is intended for two N-channel MOSFETs, but it does not provide gate-drive current or supply limits. Confirm those values before selecting gate resistors or bootstrap capacitors.
Do not assume that the similarly named ADP31100001RZ MPN is a drop-in replacement. Supplied results associate that related listing with onsemi, while ADP31100001RZ-AD is associated with Analog Devices in other listings. Verify manufacturer ownership, ordering suffix, pinout, package, electrical ratings, and lifecycle status before approving substitution or using either part interchangeably.
For a bootstrapped high-side circuit, follow the exact recommended bootstrap-capacitor and diode arrangement from the manufacturer datasheet. Keep the gate-drive loop short, use appropriate series gate resistors, and place the driver close to the MOSFET gates. These practices reduce switching-loop inductance and limit ringing, but capacitor and resistor values cannot be selected responsibly until the verified switching frequency, gate charge, and driver ratings are available.
合规信息
The supplied verified results do not include manufacturer compliance declarations for ADP31100001RZ-AD. No compliance claim is inferred.
