AFT18HW355SR5 - 350W RF Power LDMOS Transistor 1.8GHz | NXP
部品番号: AFT18HW355SR5 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $138.5 | $1,385.00 |
| 100 | $130 | $13,000.00 |
| 500 | $122 | $61,000.00 |
| 1,000 | $115 | $115,000.00 |
AFT18HW355SR5 概要
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized RF power MOSFET fabricated with a lateral drift region on a p-type epitaxial layer; the geometry reduces the drain-to-source feedback capacitance Cgd, which raises the breakdown voltage while still allowing high gain and high drain efficiency in the VHF/UHF region. Within the broader hierarchy, the AFT18HW355SR5 sits as an RF power transistor > discrete semiconductor > power amplifier building block, where it typically pairs with a digital pre-distortion (DPD) linearizer to meet modern base-station linearity masks.
Key specifications include 15.2 dB typical gain at 1880 MHz, 350 W pulsed output power capability, 28 V nominal drain supply, and a thermally enhanced ceramic flange package rated for 260 degrees C peak reflow. The internal input match reduces external component count, and the air-cavity ceramic construction supports the high junction-to-case thermal flux required at multi-hundred-watt output levels.
In a typical cellular-Doherty final stage the AFT18HW355SR5 is biased in class-AB with the carrier amplifier handling the average envelope and a peak amplifier providing efficiency at the 6-9 dB PAR crest of W-CDMA and LTE signals; the device family is widely used by NXP reference designs for macro base-station MIMO and small-cell final stages.
Primary applications include W-CDMA/LTE/5G NR macro base-station final stages, Doherty power amplifiers for cellular infrastructure, RF plasma generators, and industrial/scientific RF heating. Replacement decisions should be made on a circuit-by-circuit basis - the AFT18HW355SR5's NI230S-4 ceramic flange footprint is large and not pin-compatible with smaller LDMOS packages used in earlier macro PA boards.
When designing a thermal management layout, use a thermally conductive epoxy or solder-attached heatsink with the flange kept below 70 degrees C under continuous CW operation, and gate-bias sequencing must be applied before drain voltage to avoid parametric drift.
This page synthesizes verified distributor pricing, parametric cross-references, and practical design notes that are not consolidated in the manufacturer datasheet alone.
ドロップイン代替品: AFT18HW355SR5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
AFT18S230SR5
✅ ドロップイン📋 参考代替品（カタログ未掲載）
AFT18S290-13SR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8P20165WHSR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
AFT18HW355SR5 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors |
| Part Number | AFT18HW355SR5 |
| Device Type | RF Power LDMOS Transistor |
| Transistor Technology | Metal-Oxide Semiconductor (LDMOS) |
| Configuration | Single N-Channel |
| Number of Elements | 1 |
| Operating Frequency Range | 1805 MHz to 1880 MHz |
| Typical Gain | 15.2 dB at 1880 MHz |
| Output Power (CW / Pulsed) | 350 W |
| Drain Supply Voltage (VDD) | 28 V |
| Drain Quiescent Current (IDQA) | 1100 mA |
| Gate Bias Voltage (VGSB) | 1.45 Vdc |
| パッケージ / ケース | NI230S-4 (SOT1829) Air-Cavity Ceramic |
| 実装タイプ | Surface Mount / Flange Mount |
| Peak Reflow Temperature | 260 C |
| Maximum Time at Peak Reflow | 40 s |
| Maximum Operating Temperature | 125 C |
| Test Signal | Single-Carrier W-CDMA, PAR 9.9 dB |
AFT18HW355SR5 ni230s-4 (sot1829) air-cavity ceramic ピン配置ガイド
AFT18HW355SR5 (ni230s-4 (sot1829) air-cavity ceramic パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: AFT18HW355SR5.
詳細は データシート をご参照ください。
安全動作領域 - 1.8 GHz Doherty Application
主な用途
AFT18HW355SR5 の用途: 7 件s: 4G LTE / 5G NR Macro Base Station Final Stage, Doherty Power Amplifier Module for Cellular Infrastructure, Multi-Carrier GSM / EDGE Base Station PAs, RF Plasma Generation for Industrial / Scientific Use, RF Heating & Industrial / Scientific Microwave Generators, Public-Safety / Private-LTE Band-3 eNodeB Final Stage, High-Power Broadcast / Wireless Microwave Link Amplifier.
4G LTE / 5G NR Macro Base Station Final Stage
The AFT18HW355SR5 is designed as a 350 W Doherty final-stage amplifier for macro base stations operating in the 1805-1880 MHz band (LTE Band 3 / 5G NR n3). Its 15.2 dB typical gain at 1880 MHz and 28 V VDD operation allow it to drive a high-output-Paverage Doherty PA with digital pre-distortion (DPD) linearization. The device's internal input matching network reduces BOM count and PCB layout complexity, and the NI230S-4 ceramic flange provides the thermal mass needed for continuous CW duty cycles found in macro-cell deployments.
おすすめ
Doherty Power Amplifier Module for Cellular Infrastructure
In a symmetric or asymmetric Doherty PA module, the AFT18HW355SR5 serves as the peak amplifier (or both peak and carrier for a symmetric design) to improve back-off efficiency. The 350 W envelope capability and 28 V bias network suit modern DPD-corrected Doherty designs targeting 40-45% efficiency at 8 dB output back-off. NXP's Airfast reference designs provide PCB layouts and bias sequencing that preserve the device's ACPR and EVM performance under LTE and 5G NR downlink signals.
おすすめ
Multi-Carrier GSM / EDGE Base Station PAs
The AFT18HW355SR5's high gain and high saturated output power make it suitable for legacy multi-carrier GSM and EDGE base-station power amplifiers that need to support 4-6 carriers simultaneously in the 1800 MHz band. Although modern deployments favor LTE/5G NR, many global operators still maintain GSM/EDGE overlays. The device's linearity is sufficient for GMSK modulation without DPD, and the ceramic flange supports the continuous thermal load of multi-carrier operation.
RF Plasma Generation for Industrial / Scientific Use
Industrial RF plasma generators for semiconductor processing, thin-film deposition, and surface treatment operate in or near the 1805-1880 MHz band and require continuous CW output power at hundreds of watts. The AFT18HW355SR5's 350 W pulsed envelope and NI230S-4 flange cooling capacity translate well to plasma-driver amplifiers where the load is matched plasma rather than an antenna. Designers must add circulator protection and VSWR foldback to handle the variable plasma impedance.
RF Heating & Industrial / Scientific Microwave Generators
Industrial microwave heating and drying systems operating at 1800 MHz class use high-power RF LDMOS amplifiers like the AFT18HW355SR5 to energize applicators. Its 28 V VDD simplifies power-supply design versus 50 V-class devices, and 15.2 dB gain reduces driver-stage gain requirements. The NI230S-4 flange allows conduction-cooled heatsink mounting in sealed industrial enclosures.
Public-Safety / Private-LTE Band-3 eNodeB Final Stage
Private LTE networks for utilities, mines, ports, and public safety often deploy in Band 3 (1805-1880 MHz) and need macro-cell-class final stages. The AFT18HW355SR5 provides the linear output power and Doherty efficiency needed for these isolated networks, where per-cell traffic is moderate but reliability and 24/7 uptime are paramount. NXP's reference designs accelerate TTM for OEMs building private-network eNodeB products.
High-Power Broadcast / Wireless Microwave Link Amplifier
Although most modern point-to-point links use GaN or silicon germanium, legacy 1800 MHz-class point-to-multipoint and broadcast auxiliary links still specify LDMOS PAs. The AFT18HW355SR5 can serve as the final stage in such amplifiers where moderate bandwidth and high output power are required. A circulator/isolator at the output is mandatory to protect the LDMOS against load VSWR excursions.
おすすめ製品の概要
エンジニアリング参考データ: AFT18HW355SR5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | AFT18S230SR5 | AFT18S290-13SR3 | MRF8P20165WHSR3 |
|---|---|---|---|---|
| Package | NI230S-4 (SOT1829) | NI230S-4 - same | NI-ceramic flange - same | NI-ceramic flange - same family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 350 W | 230 W (-34%) | 290 W (-17%) | 165 W (-53%) |
| Operating Frequency | 1805-1880 MHz | 1805-1880 MHz | 1805-1880 MHz | 1930-1990 MHz (different band) |
| Internal Input Match | Yes | Yes | Yes | Yes |
| Max Reflow Temperature | 260 C / 40 s | 260 C / 40 s | 260 C / 40 s | 260 C / 40 s |
主な差別化要因
- Highest saturated output power in the AFT18xxx family （vs AFT18S230SR5)
- Higher saturated power than AFT18S290-13SR3 （vs AFT18S290-13SR3)
- 1805-1880 MHz primary cellular band targeting （vs MRF8P20165WHSR3)
設計ノート
Estimated at Pdiss = (VDD - Vdrain_sat) x Id, the AFT18HW355SR5 in continuous W-CDMA Doherty service at 63 W Pout average can dissipate 200-280 W internally. The NI230S-4 ceramic flange must be attached to a copper or aluminum cold plate via thermal compound or solder with a thermal resistance below 0.1 C/W. Forced-air cooling is mandatory for CW Doherty service; liquid-cooling cold plates are recommended for high-duty-cycle multi-carrier use. Verify flange temperature stays below the manufacturer-published maximum.
Use a high-frequency laminate (Rogers RO4350B or RO4003C) for the carrier and peak amplifier boards; the device's internal input match still requires a short 50-ohm trace plus DC-blocking and gate-bias tee networks. Place drain bias feed choke and DC-block capacitor within 3 mm of the drain lead. Solder the flange to the PCB ground with continuous ground via stitching (multiple vias around and along the lead length) to ensure low thermal resistance and a stable RF ground reference.
The AFT18HW355SR5 in Doherty service requires a quarter-wave impedance inverter on the carrier output to combine peak and carrier amplifiers. Use a high-Q microstrip or stripline element rated for 350 W peak and verify its characteristic impedance with a TDR or VNA. Add a low-loss output isolator/circulator with sufficient power rating. Above 30 W average, expect harmonic content up to -30 dBc at the 2f0 node - additional low-pass filtering may be required to meet regulatory spurious emissions.
Do not bias the drain before the gate - apply VGS = 1.45 V and let IDQA stabilize before ramping VDD to 28 V. A common mistake is to skip gate sequencing, which can cause parametric drift or thermal runaway. Also avoid running the device into high VSWR without an output circulator; LDMOS parts are less rugged than bipolar RF transistors and will degrade quickly under load-mismatch conditions. Use a load-pull simulation to verify the device stays within its thermal and voltage limits under W-CDMA peak conditions.
コンプライアンス情報
RoHS/REACH status not confirmed in Verified Web Data for AFT18HW355SR5 at the time of fetch 2026-10-16. Refer to NXP product page environmental compliance section for confirmation. AEC-Q100 does not apply (this is a base-station / industrial RF power transistor, not automotive-grade).
