AFT18HW355SR5 - 350W RF Power LDMOS Transistor 1.8GHz | NXP
MPN: AFT18HW355SR5 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $138.5 | $1,385.00 |
| 100 | $130 | $13,000.00 |
| 500 | $122 | $61,000.00 |
| 1,000 | $115 | $115,000.00 |
AFT18HW355SR5 Overview
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized RF power MOSFET fabricated with a lateral drift region on a p-type epitaxial layer; the geometry reduces the drain-to-source feedback capacitance Cgd, which raises the breakdown voltage while still allowing high gain and high drain efficiency in the VHF/UHF region. Within the broader hierarchy, the AFT18HW355SR5 sits as an RF power transistor > discrete semiconductor > power amplifier building block, where it typically pairs with a digital pre-distortion (DPD) linearizer to meet modern base-station linearity masks.
Key specifications include 15.2 dB typical gain at 1880 MHz, 350 W pulsed output power capability, 28 V nominal drain supply, and a thermally enhanced ceramic flange package rated for 260 degrees C peak reflow. The internal input match reduces external component count, and the air-cavity ceramic construction supports the high junction-to-case thermal flux required at multi-hundred-watt output levels.
In a typical cellular-Doherty final stage the AFT18HW355SR5 is biased in class-AB with the carrier amplifier handling the average envelope and a peak amplifier providing efficiency at the 6-9 dB PAR crest of W-CDMA and LTE signals; the device family is widely used by NXP reference designs for macro base-station MIMO and small-cell final stages.
Primary applications include W-CDMA/LTE/5G NR macro base-station final stages, Doherty power amplifiers for cellular infrastructure, RF plasma generators, and industrial/scientific RF heating. Replacement decisions should be made on a circuit-by-circuit basis - the AFT18HW355SR5's NI230S-4 ceramic flange footprint is large and not pin-compatible with smaller LDMOS packages used in earlier macro PA boards.
When designing a thermal management layout, use a thermally conductive epoxy or solder-attached heatsink with the flange kept below 70 degrees C under continuous CW operation, and gate-bias sequencing must be applied before drain voltage to avoid parametric drift.
This page synthesizes verified distributor pricing, parametric cross-references, and practical design notes that are not consolidated in the manufacturer datasheet alone.
Drop-in alternatives for AFT18HW355SR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
AFT18S230SR5
✅ Drop-In📋 Reference alternative (not in catalog)
AFT18S290-13SR3
✅ Drop-In📋 Reference alternative (not in catalog)
MRF8P20165WHSR3
✅ Drop-In📋 Reference alternative (not in catalog)
AFT18HW355SR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors |
| Part Number | AFT18HW355SR5 |
| Device Type | RF Power LDMOS Transistor |
| Transistor Technology | Metal-Oxide Semiconductor (LDMOS) |
| Configuration | Single N-Channel |
| Number of Elements | 1 |
| Operating Frequency Range | 1805 MHz to 1880 MHz |
| Typical Gain | 15.2 dB at 1880 MHz |
| Output Power (CW / Pulsed) | 350 W |
| Drain Supply Voltage (VDD) | 28 V |
| Drain Quiescent Current (IDQA) | 1100 mA |
| Gate Bias Voltage (VGSB) | 1.45 Vdc |
| Package / Case | NI230S-4 (SOT1829) Air-Cavity Ceramic |
| Mounting Type | Surface Mount / Flange Mount |
| Peak Reflow Temperature | 260 C |
| Maximum Time at Peak Reflow | 40 s |
| Maximum Operating Temperature | 125 C |
| Test Signal | Single-Carrier W-CDMA, PAR 9.9 dB |
AFT18HW355SR5 ni230s-4 (sot1829) air-cavity ceramic Pin Configuration Guide
Pin configuration for AFT18HW355SR5 (ni230s-4 (sot1829) air-cavity ceramic package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for AFT18HW355SR5.
Refer to the datasheet for full pin configuration.
Safe Operating Area - 1.8 GHz Doherty Application
Typical Applications
AFT18HW355SR5 is suitable for 7 applications: 4G LTE / 5G NR Macro Base Station Final Stage, Doherty Power Amplifier Module for Cellular Infrastructure, Multi-Carrier GSM / EDGE Base Station PAs, RF Plasma Generation for Industrial / Scientific Use, RF Heating & Industrial / Scientific Microwave Generators, Public-Safety / Private-LTE Band-3 eNodeB Final Stage, High-Power Broadcast / Wireless Microwave Link Amplifier.
4G LTE / 5G NR Macro Base Station Final Stage
The AFT18HW355SR5 is designed as a 350 W Doherty final-stage amplifier for macro base stations operating in the 1805-1880 MHz band (LTE Band 3 / 5G NR n3). Its 15.2 dB typical gain at 1880 MHz and 28 V VDD operation allow it to drive a high-output-Paverage Doherty PA with digital pre-distortion (DPD) linearization. The device's internal input matching network reduces BOM count and PCB layout complexity, and the NI230S-4 ceramic flange provides the thermal mass needed for continuous CW duty cycles found in macro-cell deployments.
Recommended
Doherty Power Amplifier Module for Cellular Infrastructure
In a symmetric or asymmetric Doherty PA module, the AFT18HW355SR5 serves as the peak amplifier (or both peak and carrier for a symmetric design) to improve back-off efficiency. The 350 W envelope capability and 28 V bias network suit modern DPD-corrected Doherty designs targeting 40-45% efficiency at 8 dB output back-off. NXP's Airfast reference designs provide PCB layouts and bias sequencing that preserve the device's ACPR and EVM performance under LTE and 5G NR downlink signals.
Recommended
Multi-Carrier GSM / EDGE Base Station PAs
The AFT18HW355SR5's high gain and high saturated output power make it suitable for legacy multi-carrier GSM and EDGE base-station power amplifiers that need to support 4-6 carriers simultaneously in the 1800 MHz band. Although modern deployments favor LTE/5G NR, many global operators still maintain GSM/EDGE overlays. The device's linearity is sufficient for GMSK modulation without DPD, and the ceramic flange supports the continuous thermal load of multi-carrier operation.
RF Plasma Generation for Industrial / Scientific Use
Industrial RF plasma generators for semiconductor processing, thin-film deposition, and surface treatment operate in or near the 1805-1880 MHz band and require continuous CW output power at hundreds of watts. The AFT18HW355SR5's 350 W pulsed envelope and NI230S-4 flange cooling capacity translate well to plasma-driver amplifiers where the load is matched plasma rather than an antenna. Designers must add circulator protection and VSWR foldback to handle the variable plasma impedance.
RF Heating & Industrial / Scientific Microwave Generators
Industrial microwave heating and drying systems operating at 1800 MHz class use high-power RF LDMOS amplifiers like the AFT18HW355SR5 to energize applicators. Its 28 V VDD simplifies power-supply design versus 50 V-class devices, and 15.2 dB gain reduces driver-stage gain requirements. The NI230S-4 flange allows conduction-cooled heatsink mounting in sealed industrial enclosures.
Public-Safety / Private-LTE Band-3 eNodeB Final Stage
Private LTE networks for utilities, mines, ports, and public safety often deploy in Band 3 (1805-1880 MHz) and need macro-cell-class final stages. The AFT18HW355SR5 provides the linear output power and Doherty efficiency needed for these isolated networks, where per-cell traffic is moderate but reliability and 24/7 uptime are paramount. NXP's reference designs accelerate TTM for OEMs building private-network eNodeB products.
High-Power Broadcast / Wireless Microwave Link Amplifier
Although most modern point-to-point links use GaN or silicon germanium, legacy 1800 MHz-class point-to-multipoint and broadcast auxiliary links still specify LDMOS PAs. The AFT18HW355SR5 can serve as the final stage in such amplifiers where moderate bandwidth and high output power are required. A circulator/isolator at the output is mandatory to protect the LDMOS against load VSWR excursions.
Recommended Products Summary
Engineering reference data for AFT18HW355SR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AFT18S230SR5 | AFT18S290-13SR3 | MRF8P20165WHSR3 |
|---|---|---|---|---|
| Package | NI230S-4 (SOT1829) | NI230S-4 - same | NI-ceramic flange - same | NI-ceramic flange - same family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 350 W | 230 W (-34%) | 290 W (-17%) | 165 W (-53%) |
| Operating Frequency | 1805-1880 MHz | 1805-1880 MHz | 1805-1880 MHz | 1930-1990 MHz (different band) |
| Internal Input Match | Yes | Yes | Yes | Yes |
| Max Reflow Temperature | 260 C / 40 s | 260 C / 40 s | 260 C / 40 s | 260 C / 40 s |
Key Differentiators
- Highest saturated output power in the AFT18xxx family (vs AFT18S230SR5)
- Higher saturated power than AFT18S290-13SR3 (vs AFT18S290-13SR3)
- 1805-1880 MHz primary cellular band targeting (vs MRF8P20165WHSR3)
Design Notes
Estimated at Pdiss = (VDD - Vdrain_sat) x Id, the AFT18HW355SR5 in continuous W-CDMA Doherty service at 63 W Pout average can dissipate 200-280 W internally. The NI230S-4 ceramic flange must be attached to a copper or aluminum cold plate via thermal compound or solder with a thermal resistance below 0.1 C/W. Forced-air cooling is mandatory for CW Doherty service; liquid-cooling cold plates are recommended for high-duty-cycle multi-carrier use. Verify flange temperature stays below the manufacturer-published maximum.
Use a high-frequency laminate (Rogers RO4350B or RO4003C) for the carrier and peak amplifier boards; the device's internal input match still requires a short 50-ohm trace plus DC-blocking and gate-bias tee networks. Place drain bias feed choke and DC-block capacitor within 3 mm of the drain lead. Solder the flange to the PCB ground with continuous ground via stitching (multiple vias around and along the lead length) to ensure low thermal resistance and a stable RF ground reference.
The AFT18HW355SR5 in Doherty service requires a quarter-wave impedance inverter on the carrier output to combine peak and carrier amplifiers. Use a high-Q microstrip or stripline element rated for 350 W peak and verify its characteristic impedance with a TDR or VNA. Add a low-loss output isolator/circulator with sufficient power rating. Above 30 W average, expect harmonic content up to -30 dBc at the 2f0 node - additional low-pass filtering may be required to meet regulatory spurious emissions.
Do not bias the drain before the gate - apply VGS = 1.45 V and let IDQA stabilize before ramping VDD to 28 V. A common mistake is to skip gate sequencing, which can cause parametric drift or thermal runaway. Also avoid running the device into high VSWR without an output circulator; LDMOS parts are less rugged than bipolar RF transistors and will degrade quickly under load-mismatch conditions. Use a load-pull simulation to verify the device stays within its thermal and voltage limits under W-CDMA peak conditions.
Compliance Information
RoHS/REACH status not confirmed in Verified Web Data for AFT18HW355SR5 at the time of fetch 2026-10-16. Refer to NXP product page environmental compliance section for confirmation. AEC-Q100 does not apply (this is a base-station / industrial RF power transistor, not automotive-grade).
