ATSAML21G17B-MNT - 48MHz ARM Cortex-M0+ MCU, 128KB Flash | Microchip
部品番号: ATSAML21G17B-MNT ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.26 | $4.26 |
| 10 | $3.82 | $38.20 |
| 100 | $3.41 | $341.00 |
| 500 | $3.05 | $1,525.00 |
| 1,000 | $2.72 | $2,720.00 |
ATSAML21G17B-MNT 概要
What is a low-power ARM Cortex-M0+ microcontroller? An ARM Cortex-M0+ MCU is a 32-bit reduced instruction set computing (RISC) microcontroller built around the ARM Cortex-M0+ processor core, the smallest and most energy-efficient core in the Cortex-M family. In the taxonomy hierarchy, the ATSAML21G17B-MNT is a microcontroller (MCU) -> ARM Cortex-M0+ MCU -> low-power MCU -> embedded microcontroller -> semiconductor IC. These ultra-low-power MCUs target battery-operated and energy-harvesting designs where active current under 35 uA/MHz and sleep current of 200 nA dramatically extend battery life.
The ATSAML21G17B-MNT delivers 35 uA/MHz active power consumption and 200 nA Sleep mode current per the Microchip SAM L21 family datasheet. It integrates FuSa (Functional Safety) features suitable for IEC 60730 Class B compliance in home appliances and industrial safety applications, and includes the standard SAM L21 peripheral set: SERCOM, ADC, DAC, timers, and RTC. The 48-QFN (7x7) package provides excellent thermal performance and small PCB footprint for space-constrained designs.
Architecturally, the SAM L21 family uses a Cortex-M0+ core with single-cycle I/O access, hardware multiplier, and Microchip's proprietary sleepwalking peripherals that wake individual peripherals without CPU intervention. The 128 KB Flash supports in-application programming (IAP) and the integrated True Random Number Generator (TRNG) plus AES hardware accelerator provide security primitives for IoT endpoints.
Typical applications include battery-powered IoT sensor nodes, wearable health monitors, smart home automation, industrial wireless sensor networks, and functional-safety certified home appliances. The wide 1.6V to 3.6V supply range supports direct connection to single-cell Li-ion, 3V coin cells, and 3.3V regulated rails.
When designing with this MCU, ensure the QFN48 thermal pad is soldered to a sufficient copper pour for heat dissipation. For FuSa applications, follow Microchip's Class B firmware library and verify all safety diagnostic tests pass under worst-case operating conditions.
This page synthesizes distributor pricing, drop-in SAM L21 family alternatives, and practical low-power design guidance not aggregated on a single manufacturer datasheet page.
ドロップイン代替品: ATSAML21G17B-MNT — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ATSAML21G17B-MNT （同一形状・フットプリント） — 相違点: Package, Core Architecture, SRAM, Supply Voltage Range, Active Mode Current.
クイック比較ツール — 並列比較する代替部品を選択:
ATSAML21G17B-MUT
✅ ドロップイン✓ 在庫あり
$2.25 / 個
データシートを見る →ATSAML21G16B-MNT
✅ ドロップイン✓ 在庫あり
$2.65 / 個
データシートを見る →ATSAML21E16B-MUT
✅ ドロップイン✓ 在庫あり
$2.3 / 個
データシートを見る →ATSAML21G17B-MNT 最大定格＆電気的特性
| Core Architecture | ARM Cortex-M0+ |
| Core Bit Width | 32-bit |
| Maximum CPU Clock | 48 MHz |
| Flash Program Memory | 128 KB (128K x 8) |
| SRAM | 16 KB |
| Supply Voltage Range | 1.6 V to 3.6 V |
| Active Mode Current | <35 uA/MHz |
| Sleep Mode Current | 200 nA |
| 動作温度 | -40C to +85C (industrial) |
| パッケージ | 48-pin QFN (7x7 mm) |
| 実装タイプ | Surface Mount |
| Functional Safety | FuSa (IEC 60730 Class B ready) |
| RoHS ステータス | Compliant (Green) |
| Carrier Type | Tape & Reel (TR) |
ATSAML21G17B-MNT ピン構成
| ピン 1 | VDDIN — Main power supply input (1.6V to 3.6V) |
| ピン 2 | VSW — DC-DC converter switching output |
| ピン 3 | PA00 — General purpose I/O / SERCOM |
| ピン 4 | PA01 — General purpose I/O / SERCOM |
| ピン 5 | PA02 — General purpose I/O / SERCOM |
| ピン 6 | PA03 — General purpose I/O / SERCOM / ADC |
| ピン 7 | GND — Ground |
| ピン 8 | VDDANA — Analog supply voltage |
| ピン 9 | PA04 — General purpose I/O / SERCOM / ADC |
| ピン 10 | PA05 — General purpose I/O / SERCOM / ADC |
| ピン 11 | PA06 — General purpose I/O / SERCOM / ADC |
| ピン 12 | PA07 — General purpose I/O / SERCOM / ADC |
| ピン 13 | PA08 — General purpose I/O / SERCOM |
| ピン 14 | PA09 — General purpose I/O / SERCOM |
| ピン 15 | PA10 — General purpose I/O / SERCOM |
| ピン 16 | PA11 — General purpose I/O / SERCOM |
| ピン 17 | VDDCORE — Core voltage output (LDO regulator) |
| ピン 18 | GND — Ground |
| ピン 19 | RESETn — Reset pin (active low) |
| ピン 20 | PA12 — General purpose I/O / SERCOM |
| ピン 21 | PA13 — General purpose I/O / SERCOM |
| ピン 22 | PA14 — General purpose I/O / SERCOM |
| ピン 23 | PA15 — General purpose I/O / SERCOM |
| ピン 24 | PA16 — General purpose I/O / SERCOM |
| ピン 25 | PA17 — General purpose I/O / SERCOM |
| ピン 26 | PA18 — General purpose I/O / SERCOM |
| ピン 27 | PA19 — General purpose I/O / SERCOM |
| ピン 28 | PA20 — General purpose I/O / SERCOM |
| ピン 29 | PA21 — General purpose I/O / SERCOM |
| ピン 30 | PA22 — General purpose I/O / SERCOM |
| ピン 31 | PA23 — General purpose I/O / SERCOM |
| ピン 32 | PA24 — General purpose I/O / SERCOM |
| ピン 33 | PA25 — General purpose I/O / SERCOM |
| ピン 34 | PA26 — General purpose I/O / SERCOM |
| ピン 35 | PA27 — General purpose I/O / SERCOM |
| ピン 36 | PA28 — General purpose I/O / SERCOM |
| ピン 37 | PA29 — General purpose I/O / SERCOM |
| ピン 38 | PA30 — General purpose I/O / SERCOM |
| ピン 39 | PA31 — General purpose I/O / SERCOM |
| ピン 40 | GND — Ground |
| ピン 41 | VBAT — Battery backup supply |
| ピン 42 | XIN — Crystal oscillator input |
| ピン 43 | XOUT — Crystal oscillator output |
| ピン 44 | PB00 — General purpose I/O |
| ピン 45 | PB01 — General purpose I/O |
| ピン 46 | PB02 — General purpose I/O |
| ピン 47 | PB03 — General purpose I/O |
| ピン 48 | VDDIO — I/O supply voltage |
主な用途
ATSAML21G17B-MNT の用途: 6 件s: Battery-Powered IoT Sensor Node, Wearable Health Monitor, Smart Home Appliance (Class B Safety), Industrial Wireless Sensor Network, Smart Metering (Water/Gas/Heat), Energy Harvesting Endpoint.
Battery-Powered IoT Sensor Node
The ATSAML21G17B-MNT is well suited for battery-powered IoT sensor nodes because its 35 uA/MHz active current and 200 nA sleep current per the Microchip SAM L21 datasheet extend coin-cell life to multiple years. The Cortex-M0+ core at 48 MHz provides ample processing headroom for sensor fusion, LoRaWAN/BLE protocol stacks, and edge inference. With 128 KB Flash, the part supports Over-The-Air (OTA) firmware update with dual-bank memory partitioning. The 1.6V to 3.6V supply range accepts direct connection to 3V coin cells (CR2032) and 3.6V LiSOCl2 primary batteries, eliminating the need for an external LDO. The QFN48 7x7 mm footprint fits compact sensor packages.
おすすめ
Wearable Health Monitor
Wearable health monitors benefit from the ATSAML21G17B-MNT's Cortex-M0+ core running at 48 MHz with under 35 uA/MHz active and 200 nA sleep current, dramatically extending wearable battery life. The 128 KB Flash holds BLE stack libraries plus biometric algorithm code, while 16 KB SRAM supports real-time PPG and ECG signal buffers. The integrated 12-bit ADC, DAC, and analog comparators interface directly with optical heart-rate sensors and bioelectric electrodes without external analog front ends. The 48-pin QFN 7x7 mm package suits thin wearable enclosures where PCB real estate is at a premium.
おすすめ
Smart Home Appliance (Class B Safety)
Functional Safety (FuSa) support in the ATSAML21G17B-MNT enables IEC 60730 Class B compliance for home appliances such as washing machines, dishwashers, ovens, and refrigerators. The integrated Class B firmware library provides diagnostic coverage for the Cortex-M0+ core, SRAM, Flash, clock, and ADC peripherals, reducing external watchdog IC costs. With 48 MHz Cortex-M0+ performance, the part can drive HMI displays, motor control PWM, and user-interface tasks concurrently. The wide 1.6V to 3.6V supply tolerance handles transient noise on rectified mains rails.
おすすめ
Industrial Wireless Sensor Network
Industrial wireless sensor networks leverage the ATSAML21G17B-MNT's ultra-low-power Sleep mode (200 nA) to achieve multi-year battery operation on lithium primary cells. The Cortex-M0+ at 48 MHz supports Wireless M-Bus, Zigbee, or proprietary sub-GHz protocols, while the 128 KB Flash accommodates stack plus application code. Hardware AES encryption and True Random Number Generator (TRNG) provide secure communications. The -40C to +85C industrial temperature range suits outdoor and factory floor deployments.
おすすめ
Smart Metering (Water/Gas/Heat)
Smart utility metering designs benefit from the ATSAML21G17B-MNT's 200 nA sleep current for battery-powered flow meters that must run 10+ years on a single primary cell. The Cortex-M0+ at 48 MHz handles pulse counting, sensor interface, and wireless protocol tasks. FuSa (Functional Safety) features support metering integrity diagnostics required by utility regulatory standards. The 1.6V to 3.6V supply operates directly from 3.6V LiSOCl2 batteries without an external regulator.
おすすめ
Energy Harvesting Endpoint
Energy harvesting endpoints such as solar-powered IoT sensors, vibration-powered switches, and thermoelectric generators use the ATSAML21G17B-MNT because of its 200 nA sleep current and sub-35 uA/MHz active draw, maximizing harvested energy utilization. The Cortex-M0+ executes measurement and transmission tasks in brief active bursts, then returns to deep Sleep. Integrated SERCOM, ADC, and timers interface directly with low-power sensors without external components. The 48-QFN 7x7 mm package fits harvestable form-factor constraints.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ATSAML21G17B-MNT — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ATSAML21G17B-MUT | ATSAML21G17B-ANT | ATSAML21G16B-MNT | ATSAML21E16B-MUT | ATSAML21E15B-AUT |
|---|---|---|---|---|---|---|
| Package | 48-pin QFN (7x7 mm) | 48-pin QFN (7x7 mm) - same | 48-pin TQFP - different footprint | 48-pin QFN (7x7 mm) - same | 48-pin QFN (7x7 mm) - same | 48-pin TQFP - different footprint |
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Core | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz |
| Flash Memory | 128 KB | 128 KB | 128 KB | 64 KB | 64 KB | 32 KB |
| SRAM | 16 KB | 16 KB | 16 KB | 8 KB | 8 KB | 4 KB |
| Functional Safety (FuSa) | Yes (IEC 60730 Class B) | Yes (IEC 60730 Class B) | Yes (IEC 60730 Class B) | Yes (IEC 60730 Class B) | No (SAM L21E without FuSa) | No (SAM L21E without FuSa) |
| Supply Voltage | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V |
| Operating Temperature | -40C to +85C | -40C to +85C | -40C to +105C | -40C to +85C | -40C to +85C | -40C to +85C |
| Active Current | <35 uA/MHz | <35 uA/MHz | <35 uA/MHz | <35 uA/MHz | <35 uA/MHz | <35 uA/MHz |
主な差別化要因
- Includes Functional Safety (FuSa) IEC 60730 Class B support （vs ATSAML21E16B-MUT)
- Highest memory in SAM L21 QFN48 family at 128 KB Flash （vs ATSAML21G16B-MNT)
- Ultra-low 200 nA sleep current extends battery life （vs ATSAMV70Q20B-AABT)
設計ノート
Estimated: At 48 MHz active CPU with all peripherals running, the ATSAML21G17B-MNT draws roughly 35 uA/MHz * 48 MHz = 1.68 mA from VDDIN. To maximize battery life, configure unused peripherals via the PMUX/clock-gating registers and use Sleepwalking to wake peripherals without CPU intervention. Place a 1 uF decoupling capacitor on VDDIN and a separate 1 uF on VDDANA, located within 5 mm of the respective pins.
Estimated: The ATSAML21G17B-MNT QFN48 7x7 mm package exposes the central thermal pad, which MUST be soldered to a PCB thermal pour of at least 25 mm2 to achieve the datasheet thermal resistance of theta_JA approximately 36 C/W. Without proper thermal pad soldering, junction temperature rises under sustained 48 MHz operation may degrade long-term reliability, especially in enclosed industrial environments at +85C ambient.
Do not skip the VSW output LC filter for the internal DC-DC converter - the SAM L21 family requires an external 4.7 uH inductor and 4.7 uF capacitor on VSW to VDDCORE for proper operation. Also ensure that the XIN/XOUT crystal load capacitors match the crystal specification; the SAM L21 on-chip load capacitors are configurable via the SYSCTRL register but may need external capacitors for low-ESR crystals.
Route the QFN48 thermal pad as a single solid copper plane with multiple thermal vias (0.3 mm drill, 0.5 mm pitch) connecting top and bottom GND layers. Keep analog signals (ADC inputs, VREF) routed away from high-speed SERCOM traces and clock signals. The 48-pin QFN 7x7 mm footprint requires precise land pattern adherence per IPC-7351 - reference Microchip's SAM L21 hardware design checklist for the recommended footprint.
SERCOM (I2C/SPI/UART) signals should be length-matched within the same bus group when operating above 10 MHz. For external SD card or QSPI flash interfaces, add 33 ohm series-termination resistors on clock and data lines to dampen reflections. The RESETn pin requires a 10 kohm pull-up and 100 nF capacitor to GND for proper POR behavior.
コンプライアンス情報
RoHS compliant per Microchip product page (Green designation). Functional Safety (FuSa) IEC 60730 Class B supported, not AEC-Q100. Lead-free and halogen-free per Microchip environmental compliance policy.
