BFU520AR - NPN RF Transistor 12V 30mA 10GHz | NXP
部品番号: BFU520AR ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.34 | $3.40 |
| 100 | $0.3 | $30.00 |
| 500 | $0.28 | $140.00 |
| 1,000 | $0.26 | $260.00 |
BFU520AR 概要
An RF BJT is a transistor optimized for amplification of high-frequency small signals, forming part of the semiconductor hierarchy: RF transistor -> bipolar junction transistor -> discrete semiconductor. Wideband RF transistors like the BFU520AR are used as low-noise amplifiers (LNA), oscillators, and buffers in RF front-end chains, where gain-bandwidth product and noise figure, not DC gain, are the dominant design parameters.
Key features include a 10 GHz transition frequency supporting operation well beyond the BFU5 family's intended small-signal to medium-power band up to 2 GHz, low-noise high-breakdown construction for receiver front ends, and a compact industry-standard SOT-23 footprint. The device is positioned within the BFU5 family of NPN wideband transistors intended for high-speed, low-noise applications.
Technically, the BFU520AR uses a silicon NPN epitaxial structure with geometry scaled for microwave transition frequencies; the reduced emitter-base and collector capacitances that enable the 10 GHz fT also deliver usable gain in VHF, UHF, and microwave links up to several GHz. The 450 mW power dissipation rating supports medium-power driver stages at RF with proper PCB copper heat-spreading.
Typical applications include low-noise amplifier input stages in 2.4 GHz and sub-6 GHz receivers, VCO and oscillator stages in RF synthesizers, and general-purpose wideband IF/RF gain blocks in communication equipment.
Design consideration: bias stability is critical - use emitter degeneration or temperature-compensated bias networks, since fT and noise figure degrade rapidly at collector currents outside the datasheet optimum point.
This page synthesizes distributor pricing, drop-in alternatives, pinout, and practical design notes not found in the manufacturer datasheet. Pricing references are as of 2026-09-13.
ドロップイン代替品: BFU520AR — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BFU520AR （同一形状・フットプリント） — 相違点: Package, Configuration, Family, Transition Frequency (fT).
クイック比較ツール — 並列比較する代替部品を選択:
BFU540
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BFU510
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BFU520AR 最大定格＆電気的特性
| トランジスタタイプ | NPN wideband silicon RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V |
| Continuous Collector Current (IC) | 30 mA |
| 遷移周波数（ft） | 10 GHz |
| Total Power Dissipation (Ptot) | 450 mW |
| パッケージ | SOT-23 (TO-236AB), 3-pin |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -40C to +150C |
| Qualification | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | BFU5 wideband RF transistor family |
| Intended Application Band | Small signal to medium power up to 2 GHz |
| Polarity | NPN |
| Packaging | Reel (R suffix, tape and reel) |
BFU520AR ピン構成
| ピン 1 | E (Emitter) — Emitter terminal - RF ground return |
| ピン 2 | B (Base) — Base terminal - bias and RF input |
| ピン 3 | C (Collector) — Collector terminal - RF output / bias via choke |
主な用途
BFU520AR の用途: 6 件s: Low-Noise Amplifier (LNA) Front End, VCO and Oscillator Stages, IF and RF Gain Blocks, Wireless Infrastructure Buffers, Automotive RF and Telematics, Test and Measurement Wideband Amplifiers.
Low-Noise Amplifier (LNA) Front End
The BFU520AR's 10 GHz transition frequency and low-noise NPN construction make it a strong candidate for the first amplifier stage in receiver front ends operating at UHF through 2.4 GHz. Its 12 V VCEO allows direct operation from common 5 V or 12 V rail architectures with adequate breakdown margin, and the 30 mA collector current rating supports the 5-20 mA bias points typical of noise-optimized LNAs. In a typical topology, the transistor is biased through an RF choke with emitter degeneration providing the inductive feedback used for simultaneous noise and gain matching. Because the BFU520AR retains usable gain well past 2 GHz, designers gain margin against process spread. Validate noise figure at the chosen collector current against the datasheet optimum, as noise performance degrades away from the specified IC optimum.
おすすめ
VCO and Oscillator Stages
The BFU520AR works well as the active device in Colpitts, Clapp, and negative-resistance VCO cores up to several GHz thanks to its 10 GHz fT and low device capacitances. Its 450 mW dissipation rating supports oscillator output buffer stages without additional amplification, and the 12 V rating suits both 5 V and 12 V synthesizer rails. In an oscillator, the BFU520AR's consistent fT versus collector-current characteristic helps maintain loop gain over temperature across the -40C to +150C range. Designers typically set IC at 10-25 mA to trade phase-noise performance against dissipation; lower collector current improves loaded-Q impact on the resonator and thus phase noise. Reserve margin on the 2 GHz family rating: oscillator harmonics rely on device gain, and the BFU520AR's high fT provides it.
おすすめ
IF and RF Gain Blocks
As a general-purpose wideband gain block, the BFU520AR provides predictable gain in IF strips and broadband amplifiers for test equipment, communication receivers, and repeaters. The 10 GHz fT yields a flat gain response with resistive loading up to several hundred MHz and useful gain to 2 GHz and beyond, while the 30 mA current rating permits medium-power output drives on the order of +10 dBm with proper matching. A common configuration is a resistively feedback amplifier (shunt-series feedback) that fixes input/output impedance near 50 ohms, where the BFU520AR's gain-bandwidth keeps return loss acceptable across the band. Its AEC-Q101 qualification listing also permits use in automotive telematics and SDARS tuner IF stages where qualified discretes are required.
おすすめ
Wireless Infrastructure Buffers
In wireless infrastructure such as remote radio heads, small-cell radios, and microwave point-to-point links, the BFU520AR serves as a buffer or driver between synthesizer/PLL outputs and mixer or modulator ports. Its 450 mW package dissipation supports the 0 to +13 dBm drive levels typically needed at mixer LO ports with a 50-ohm environment, and the SOT-23 package keeps parasitic inductance low enough for clean 2 GHz operation when mounted with short emitter ground returns. The 12 V collector rating accommodates higher supply rails that improve linearity (IP3) at a given output power. Place the transistor close to a via-stitched ground plane: emitter lead inductance directly erodes gain at these frequencies, and each nanohenry matters at 2 GHz.
おすすめ
Automotive RF and Telematics
Distributor listings attribute AEC-Q101 qualification and an Automotive series designation to the BFU520AR, with a -40C to +150C operating range that covers automotive module environments. This makes it suitable for telematics units, keyless-entry receivers, tire-pressure-monitor receivers, and SDARS/DAB tuners, all of which need small-signal RF amplification in the hundreds of MHz to 2.4 GHz range. The 12 V VCEO tolerates load-dump-adjacent rail conditions when used behind standard transient protection, and the SOT-23 package is compatible with high-volume reflow assembly. For safety-relevant applications, request the qualification dossier and PPAP documentation from NXP to support your own IATF-16949 supply-chain requirements before releasing the part into automotive production.
おすすめ
Test and Measurement Wideband Amplifiers
The BFU520AR's wide bandwidth suits DIY and production test equipment such as wideband preamplifiers, oscilloscope front-end RF buffers, and spectrum-analyzer IF strips. With a 10 GHz fT, a two-stage BFU520AR design can achieve 20-30 dB gain from near-DC to beyond 1 GHz using resistive feedback for impedance control, and the 450 mW dissipation supports output stages driving 50-ohm loads at moderate levels. The 3-pin SOT-23 package simplifies hand assembly and prototyping on standard RF evaluation boards. For measurement integrity, prioritize a solid ground plane and short emitter grounding; also verify bias-point stability over the -40C to +150C industrial range, since hFE drift shifts gain calibration in unregulated bias designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BFU520AR — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BFU540 | BFU510 | BFR505T |
|---|---|---|---|---|
| Package | SOT-23 (TO-236AB) | SOT-23 (TO-236AB) - same | SOT-23 (TO-236AB) - same | SC-75 - different footprint |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors (Philips legacy) |
| Transition Frequency (fT) | 10 GHz | approximately 8 GHz | approximately 5 GHz | 9 GHz |
| VCEO | 12 V | higher (20 V class) | similar low-voltage class | 12 V |
| Power Dissipation | 450 mW | similar SOT-23 class | similar SOT-23 class | lower (smaller SC-75 package) |
| Drop-in Compatibility | Reference part | Yes - same SOT-23 footprint/pinout | Yes - same SOT-23 footprint/pinout | No - SC-75 requires new land pattern |
主な差別化要因
- Highest fT in its immediate SOT-23 family tier （vs BFU540)
- Balanced frequency headroom versus cost （vs BFU510)
- Standard 3-pin SOT-23 footprint （vs BFR505T)
設計ノート
Emitter grounding is the dominant layout variable for this 10 GHz fT device. Connect pin 1 (emitter) directly to a via-stitched ground plane within 1-2 mm of the package; each nH of emitter lead inductance introduces degenerative feedback that measurably reduces gain at 2 GHz. Use the SOT-23 land pattern with thermal relief removed on ground connections, and keep base and collector traces at 50-ohm geometry (about 3 mm width on 1.6 mm FR-4 microstrip) for matched stages.
Estimated: with the full 450 mW dissipation and a typical SOT-23 junction-to-ambient thermal resistance in the 250-400 C/W range on minimum copper, junction rise can exceed 110 C above ambient - approaching the 150 C maximum. Spreading at least 4-6 square cm of copper on the collector-side plane, or limiting dissipation below about 200 mW, keeps margins safe. Bias the device at 10-20 mA on a 5-12 V rail rather than the full 30 mA/12 V corner unless output drive requires it.
Do not assume SOT-23 pinout uniformity across RF transistor vendors - the BFU520AR uses E(1)-B(2)-C(3), but some equivalents route base on pin 1. Verify against the NXP package drawing before second-sourcing. Also, the BFU5 family is rated for applications up to 2 GHz; operating near 2.4-2.5 GHz is possible given the 10 GHz fT, but gain and noise figure must be validated from datasheet S-parameter tables at your exact bias point, not assumed from the family description.
コンプライアンス情報
Distributor listing attributes AEC-Q101 (automotive, discrete semiconductor standard) qualification and an Automotive series designation to the BFU520AR. RoHS/REACH/lead-free status not stated in the retrieved web data - confirm on the official NXP product page.
