BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
部品番号: BSC040N10NS5ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.96 | $19.60 |
| 100 | $1.59 | $159.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.07 | $1,070.00 |
| 3,000 | $0.93 | $2,790.00 |
BSC040N10NS5ATMA1 概要
What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor is the workhorse switching element of modern power electronics. The N-channel variant conducts when the gate is pulled above the source by VGS(th); for power applications, the MOSFET category encompasses low-voltage signal MOSFETs, standard MOSFETs, and high-power MOSFETs, the latter being the relevant hypernym for this part. Within discrete semiconductors, this device sits in the power MOSFET tier optimized for switching converters, motor drives, and synchronous rectification.
Key features include the OptiMOS 5 technology generation, which delivers up to 44% output capacitance reduction and up to 43% RDS(on) reduction versus the previous generation, enabling higher switching frequencies and higher system efficiency. The part is optimized for synchronous rectification in switched-mode power supplies, where it serves as the low-side FET. Its low Qg and Qgd support fast turn-on/turn-off transitions, reducing switching losses and allowing designers to shrink magnetics.
Typical applications include synchronous rectification in 48 V telecom and server DC-DC point-of-load converters, primary-side switching in telecom bricks, motor drive half-bridges in industrial and automotive 12 V/24 V systems, hot-swap and OR-ing circuits, and battery protection in e-mobility. The part is automotive-grade qualified (AEC-Q101 family), making it suitable for body electronics and powertrain peripherals.
When designing with this device, ensure the gate driver can source/sink sufficient peak current to quickly charge Qg and avoid linear-region losses during switching transitions. Thermal management is critical: at high continuous current, use multiple thermal vias under the exposed pad and adequate copper pour on both top and inner layers.
This page synthesizes distributor pricing, same-package drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping procurement and design engineers evaluate the BSC040N10NS5ATMA1 for production.
ドロップイン代替品: BSC040N10NS5ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSC040N10NS5ATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, MSL Level, Operating Temperature Range, Packaging.
クイック比較ツール — 並列比較する代替部品を選択:
BSC050N10NS5ATMA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSC090N10NS5ATMA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSC030N08NS5ATMA1
✅ ドロップイン✓ 在庫あり
$0.55 / 個
データシートを見る →IPB017N10N5LFATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$4.05 / 個
データシートを見る →IAUCN04S7L019ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.48 / 個
データシートを見る →BSC040N10NS5ATMA1 最大定格＆電気的特性
| FET Type | N-Channel |
| Technology | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 100 V |
| Maximum On-Resistance (RDS(on)) | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Continuous Drain Current (ID) max | 136 A |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 139 W |
| パッケージ | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55C to +150C |
| Output Capacitance Reduction | Up to 44% vs previous generation |
| RDS(on) Reduction | Up to 43% vs previous generation |
| RoHS ステータス | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) |
BSC040N10NS5ATMA1 ピン構成
| ピン 1 | S — Source |
| ピン 2 | S — Source |
| ピン 3 | S — Source |
| ピン 4 | G — Gate |
| ピン 5 | S — Source |
| ピン 6 | S — Source |
| ピン 7 | S — Source |
| ピン 8 | D — Drain (also on exposed pad) |
安全動作領域
主な用途
BSC040N10NS5ATMA1 の用途: 6 件s: 48V Telecom DC-DC Synchronous Rectification, Server Point-of-Load (POL) Converters, Automotive 12V/24V Motor Drive Half-Bridge, Hot-Swap and OR-ing Controllers, Industrial Battery Protection (e-Mobility, E-Bikes), Solar Micro-Inverters and MPPT Stages.
48V Telecom DC-DC Synchronous Rectification
The BSC040N10NS5ATMA1 is optimized for synchronous rectification on the low-side of 48V-input telecom isolated DC-DC converters where its 4 mOhm RDS(on) and 100V VDS rating provide ample margin. The OptiMOS 5 platform's 44% output capacitance reduction enables switching frequencies above 500 kHz, shrinking magnetic size and improving power density. Compared to a Schottky rectifier, the MOSFET's synchronous rectification eliminates the 0.5-0.8V forward drop, raising efficiency by 3-5 percentage points at full load. Use a gate driver with 2-4A peak sink/source capability to fully exploit the low Qg and avoid linear-region switching losses during transitions.
おすすめ
Server Point-of-Load (POL) Converters
In 12V-input server VRM and POL converters delivering 1.0-3.3V rails at 20-40A, the BSC040N10NS5ATMA1 serves as the low-side synchronous FET. Its 4 mOhm RDS(on) minimizes conduction losses while the small SuperSO8 5x6 footprint allows dense multiphase layouts common in server motherboards. The OptiMOS 5 generation's reduced Qoss and Qrr cuts dead-time body-diode conduction losses, raising light-load efficiency to meet 80 PLUS Titanium targets. Pair with a digital controller such as TPS53355 for adaptive voltage positioning and accurate current sharing across phases.
おすすめ
Automotive 12V/24V Motor Drive Half-Bridge
The BSC040N10NS5ATMA1's AEC-Q101 qualification and 100V VDS rating make it well-suited for automotive body electronics motor drives such as HVAC blowers, fuel pumps, and seat adjusters operating from 12V or 24V batteries. The 100A continuous current capability handles inrush during motor start-up, while the 4 mOhm RDS(on) keeps I^2R losses low at the typical 5-20A operating current. The SuperSO8 footprint is widely accepted in automotive PCB designs and supports automated optical inspection. Use a gate driver with desaturation detection and a TVS clamp on the drain for inductive kickback protection.
おすすめ
Hot-Swap and OR-ing Controllers
In -48V telecom hot-swap and redundant power OR-ing applications, the BSC040N10NS5ATMA1 can serve as the main pass element or OR-ing FET. The 100V rating provides 2x margin over the -48V nominal bus, withstanding transient surges to 80V. The 4 mOhm RDS(on) reduces voltage drop across the OR-ing FET, minimizing dissipation during normal operation. The fast turn-off capability of OptiMOS 5 supports reverse-current blocking within microseconds during fault events. Gate-drive circuitry should include a pull-down to keep the FET off during controller startup.
おすすめ
Industrial Battery Protection (e-Mobility, E-Bikes)
For e-bike, e-scooter, and light e-mobility battery packs using 24-72V Li-ion configurations, the BSC040N10NS5ATMA1 acts as the discharge control FET in the battery management system. The 100V VDS rating comfortably covers the highest pack voltage plus transients, while the 4 mOhm RDS(on) minimizes voltage drop during high-current discharge (e.g., 30-50A continuous for e-bike motors). The automotive-grade AEC-Q101 qualification provides confidence in harsh operating environments. Use a dedicated gate-driver IC with short-circuit protection to safely interrupt fault currents within microseconds.
おすすめ
Solar Micro-Inverters and MPPT Stages
In small residential solar micro-inverters and MPPT boost stages, the BSC040N10NS5ATMA1 serves as the main switching FET on the high-side or low-side of the MPPT converter. The 100V VDS rating comfortably covers 60V nominal panel strings with margin for open-circuit voltage at cold temperatures. The 4 mOhm RDS(on) at high current and low Qg switching losses support peak efficiencies above 98% in the MPPT stage. The SuperSO8 footprint enables compact inverter designs fitting in standard solar junction boxes. Synchronize switching with the MPPT controller's PWM output and include a snubber to manage ringing during hard switching.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSC040N10NS5ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSC050N10NS5ATMA1 | BSC090N10NS5ATMA1 | BSC030N08NS5ATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| VDS max (V) | 100 | 100 | 100 | 80 | 100 |
| RDS(on) max (mOhm) | 4 | 5 | 9 | 3 | 1.7 |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
主な差別化要因
- Lowest RDS(on) in 100V SuperSO8 class （vs BSC050N10NS5ATMA1)
- Highest current capability at 4 mOhm RDS(on) （vs BSC090N10NS5ATMA1)
- Higher VDS rating for safety margin （vs BSC030N08NS5ATMA1)
設計ノート
At 100 A continuous drain current and 4 mOhm RDS(on), conduction loss alone is 40 W. The SuperSO8 5x6 package has a junction-to-case thermal resistance (theta_JC) typically below 0.9 C/W per Infineon datasheet. The exposed drain pad must be soldered to at least 100 mm^2 of copper on the top layer, with thermal vias to inner-plane copper, to keep the junction temperature below 125 C at maximum ambient. Without adequate copper, expect the part to thermal-limit at 40-60 A in free air.
Place the gate-drive loop as physically small as possible: keep the gate driver IC within 5 mm of pin 4 (gate), with a 10-22 ohm gate-source resistor and a 100 kohm pulldown to ground for fail-safe operation. Use a Kelvin connection for the source sense if the design requires accurate current sensing. The drain-connected exposed pad should be stitched with at least 9 thermal vias (0.3 mm drill, 0.5 mm pitch) to the bottom-layer ground plane. Keep high-dv/dt switching nodes away from the gate trace to avoid Miller-induced turn-on.
Do not exceed VGS = +/-20 V; Infineon specifies +/-16 V absolute maximum. Use a 10 V zener clamp across gate-source for protection against ESD and gate ringing. Body-diode reverse recovery of the BSC040N10NS5ATMA1 is optimized for synchronous rectification but still dissipates significant energy at high di/dt; keep dead-time below 50 ns to limit body-diode conduction. For first-pulse measurements, allow the device to reach thermal equilibrium before recording RDS(on) - cold readings will underestimate losses.
コンプライアンス情報
RoHS compliant per Infineon product page. AEC-Q101 qualified (automotive MOSFET standard, not AEC-Q100 which applies to ICs). Halogen-free per Infineon OptiMOS 5 family declaration.
