BSC040N10NS5ATMA1 vs BSC035N10NS5ATMA1 比較
詳細な並列比較: BSC040N10NS5ATMA1 メーカー: Infineon および BSC035N10NS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC040N10NS5ATMA1 | BSC035N10NS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.93 | $1.12 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) max | 136 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 139 W | — |
| パッケージ | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +150C | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Capacitance Reduction | Up to 44% vs previous generation | — |
| RDS(on) Reduction | Up to 43% vs previous generation | — |
| RoHS ステータス | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC035N10NS5ATMA1 |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| On-Resistance (RDS(on) max) | — | 3.5 mOhm |
| Power Dissipation (TA=25C) | — | 2.5 W |
| Power Dissipation (Tc=25C) | — | 156 W |
| Configuration | — | Single N-channel MOSFET |
| Gate Drive | — | Logic-level compatible (10V VGS) |
| MSLレベル | — | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Packaging | — | Tape & Reel (T&R) |