BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon
部品番号: BSS83PH6327XTSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.24 | $24.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.14 | $140.00 |
| 3,000 | $0.11 | $330.00 |
BSS83PH6327XTSA1 概要
A P-channel MOSFET is a type of field-effect transistor in which the conductive channel is formed by p-type semiconductor material, and conduction is controlled by applying a negative gate-source voltage relative to the source. P-channel devices simplify high-side load switching in low-voltage systems because the load can be tied to ground and the MOSFET sits between the positive rail and the load, removing the need for a charge pump or bootstrap driver. Within the broader taxonomy, P-channel MOSFETs belong to MOSFET -> transistor -> discrete semiconductor -> semiconductor component family, alongside their N-channel counterparts.
Key features of the BSS83PH6327XTSA1 include a maximum drain-source voltage of -60V, continuous drain current of 330 mA at TA = 25 C, pulsed drain current of 1.3 A, an on-resistance of 2.0 ohm maximum at VGS = -10 V, and a maximum power dissipation of 360 mW. The PG-SOT23 package measures approximately 2.9 mm x 1.5 mm x 1.0 mm, providing a compact footprint suitable for high-density PCB designs in portable and battery-powered equipment.
The device uses Infineon's planar SIPMOS process, which integrates the body diode and gate protection structures on a single die. This construction yields strong ESD robustness and stable threshold characteristics over temperature. The part is qualified to the Infineon automotive grade and is suitable for both consumer and industrial environments operating from -55 C to +150 C junction temperature.
Typical applications include load switching in battery management systems, power-rail OR-ing and multiplexing, level shifting between low-voltage MCUs and higher-voltage rails, reverse-polarity protection, and signal gating in portable consumer electronics. It is widely used as a compact high-side switch in handheld devices, IoT nodes, and USB peripherals where board space is at a premium.
When designing with this part, observe the 360 mW power dissipation limit at 25 C ambient and derate linearly to zero at 150 C. The gate should be driven with at least -10 V for full enhancement when the lowest RDS(on) is required; lower gate voltages will increase on-resistance and conduction losses. The exposed drain tab is the device's primary thermal path and should be soldered to a copper pad of at least 25 mm squared for adequate heat spreading.
This page synthesizes distributor pricing, drop-in same-package alternatives, application references, and practical design notes that go beyond the manufacturer datasheet to accelerate part selection and BOM risk reduction.
ドロップイン代替品: BSS83PH6327XTSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSS83PH6327XTSA1 （同一形状・フットプリント） — 相違点: Qualification, Continuous Drain Current (ID), Drain-Source Voltage (VDS), Package, Power Dissipation (PD).
クイック比較ツール — 並列比較する代替部品を選択:
BSS84PH6327XTSA2
✅ ドロップイン✓ 在庫あり
$0.1 / 個
データシートを見る →BSS308PEH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.11 / 個
データシートを見る →2N7002H6327XTSA2
✅ ドロップイン✓ 在庫あり
$0.08 / 個
データシートを見る →BSS138NH6327XTSA2
✅ ドロップイン✓ 在庫あり
$0.15 / 個
データシートを見る →NTR4101PT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
Si2301CDS-T1-GE3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSS83PH6327XTSA1 最大定格＆電気的特性
| FET Type | P-Channel |
| Technology | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TA=25C | 330 mA |
| Pulsed Drain Current (IDM) | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Power Dissipation (PD) at TA=25C | 360 mW |
| 動作接合温度 | -55 C to +150 C |
| パッケージ | PG-SOT23 (SOT-23-3) |
| 実装タイプ | Surface Mount |
| Qualification | Automotive grade per Infineon |
| Process Technology | SIPMOS / OptiMOS |
| RoHS ステータス | Compliant |
BSS83PH6327XTSA1 ピン構成
| ピン 1 | Gate — Gate control input; drive to -10V for full enhancement |
| ピン 2 | Source — Source terminal; tied to load in high-side P-channel configuration |
| ピン 3 | Drain — Drain terminal; connected to positive supply rail |
安全動作領域 (DC, TA = 25C)
主な用途
BSS83PH6327XTSA1 の用途: 6 件s: Battery Load Switch in IoT Sensors, Reverse-Polarity Protection, Power Rail Multiplexing and OR-ing, Level Shifter and Signal Gating, USB VBUS Power Switch, Automotive Signal Conditioning.
Battery Load Switch in IoT Sensors
The BSS83PH6327XTSA1 serves as a high-side P-channel load switch for Li-ion or coin-cell powered IoT sensor nodes. The P-channel topology allows the load (sensor, BLE radio) to be tied to ground, simplifying PCB layout and removing the need for a charge pump. With RDS(on) = 2.0 ohm at VGS = -10 V, conduction loss at 100 mA continuous load is only ~20 mV drop, preserving battery runtime. The 60V VDS rating easily accommodates 1S Li-ion (4.2V max) with substantial margin and tolerates USB hot-plug transients when used with protection circuitry. The 360 mW power dissipation limit and SOT-23 footprint suit compact sensor modules operating up to 70 C ambient.
おすすめ
Reverse-Polarity Protection
The BSS83PH6327XTSA1 is used as a P-channel MOSFET for reverse-polarity protection at the input of battery chargers and USB-powered devices. With source tied to the system load and drain to the battery terminal, the intrinsic body diode provides forward conduction during normal operation while blocking reverse current if the supply is mis-wired. Compared to a Schottky diode solution, the MOSFET drops only ~20 mV at 100 mA instead of ~300 mV, saving ~28 mW of waste heat per amp. The 60V VDS rating provides robust transient protection against load-dump events on 12V/24V industrial rails when paired with a TVS clamp.
おすすめ
Power Rail Multiplexing and OR-ing
In dual-source power systems (USB + battery, mains adapter + battery backup), the BSS83PH6327XTSA1 acts as a P-channel OR-ing switch on each rail to prevent reverse current between sources. Two BSS83P devices back-to-back can be controlled by separate GPIO lines, allowing an MCU to dynamically select between power sources with sub-millisecond switching. The 2.0 ohm RDS(on) limits conduction loss to 100 mV at 50 mA, while the 60V VDS provides headroom for legacy 12V-24V industrial rails. This topology eliminates the 0.3V drop and thermal dissipation of a Schottky OR-ing diode, increasing overall system efficiency by 2-4 percent.
おすすめ
Level Shifter and Signal Gating
The BSS83PH6327XTSA1 functions as a signal-level shifter or analog switch gate when used in the source-follower configuration. A 3.3V MCU GPIO can drive the gate directly via a pull-up to the higher rail, switching analog signals up to 60V peak-to-peak between source and drain. The 2.0 ohm RDS(on) at VGS = -10V becomes a higher R when used with a weak gate drive, but the device remains usable as a sample-and-hold gate, transmission gate, or audio signal multiplexer. The SOT-23 footprint saves board area compared to discrete JFET or photomos alternatives in multi-channel switching matrices.
おすすめ
USB VBUS Power Switch
The BSS83PH6327XTSA1 enables a low-cost USB VBUS power switch that meets USB 2.0/3.0 enumeration requirements. With the drain tied to VBUS and the source to the downstream load, the MCU can enable/disable power to a downstream device by driving the gate below ground. The 330 mA continuous rating is well below USB 3.0's 900 mA limit, so this part suits USB 2.0 low-power peripherals and HID-class devices. The 60V VDS rating protects against inductive kickback when switching inductive loads (motors, solenoids) that share the USB rail.
おすすめ
Automotive Signal Conditioning
The BSS83PH6327XTSA1 is qualified to Infineon's automotive standards and is used in body electronics, sensor interfaces, and 12V/24V load drivers. With a 60V VDS rating, it tolerates load-dump transients up to 35V typical in 12V automotive systems when paired with a TVS clamp. The P-channel topology simplifies high-side switching for lamps, solenoids, and small motors with negative gate drive from a pre-driver. Its AEC-Q automotive qualification and -55 C to +150 C junction range support underhood and cabin environments with operating temperatures from -40 C to +125 C.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSS83PH6327XTSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSS84PH6327XTSA2 | BSS308PEH6327XTSA1 | 2N7002H6327XTSA2 | BSS138NH6327XTSA2 | NTR4101PT1G | Si2301CDS-T1-GE3 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | onsemi (cross-brand) | Vishay (cross-brand) |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT23 - same | PG-SOT23 - same | PG-SOT23 - same | PG-SOT23 - same | SOT-23-3 - same | SOT-23-3 - same |
| FET Type | P-Channel | P-Channel | P-Channel | N-Channel (topology differs) | N-Channel (topology differs) | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -30 V (lower) | 60 V | 60 V | -60 V | -20 V (lower) |
| Continuous Drain Current (ID) | 330 mA | 170 mA (-48%) | 1.9 A (+475%) | 200 mA (-39%) | 230 mA (-30%) | 760 mA (+130%) | 2.6 A (+688%) |
| RDS(on) at VGS=10V | 2.0 ohm max | 2.0 ohm (same) | 0.5 ohm (-75%) | 5.0 ohm (+150%) | 3.5 ohm (+75%) | 1.5 ohm (-25%) | 0.13 ohm (-94%) |
| Gate Threshold Voltage | -1 to -2.5 V | -1 to -2.5 V | -0.6 to -1.5 V (lower) | 1 to 2.5 V (N-channel) | 0.5 to 1.5 V (N-channel) | -1 to -2.5 V | -0.45 to -0.85 V (lower) |
| Power Dissipation (PD) at TA=25C | 360 mW | 360 mW | 500 mW (+39%) | 200 mW (-44%) | 360 mW | 290 mW (-19%) | 660 mW (+83%) |
| Approx. Unit Price (qty 1000) | $0.14 USD | $0.18 USD | $0.22 USD | $0.10 USD | $0.12 USD | $0.16 USD | $0.25 USD |
主な差別化要因
- Lower minimum VDS headroom in 12V-24V rails （vs Si2301CDS-T1-GE3)
- Better RDS(on) than 2N7002H6327XTSA2 for low-loss switching （vs 2N7002H6327XTSA2)
- P-channel topology simplifies high-side switching （vs BSS138NH6327XTSA2)
- Higher continuous ID than BSS84PH6327XTSA2 （vs BSS84PH6327XTSA2)
設計ノート
At TA = 25 C, the BSS83PH6327XTSA1 dissipates a maximum of 360 mW in the PG-SOT23 package. Above 25 C, derate linearly to zero power at 150 C junction temperature, giving a derating factor of 360 mW / 125 C = ~2.9 mW per degree C rise in ambient. Estimated: with 100 mA continuous load at 2.0 ohm RDS(on), conduction loss is 20 mW - well within thermal limits. Place a copper pad of at least 25 mm squared under the drain tab to spread heat. For continuous loads above 200 mA, use the BSS84PH6327XTSA2 or NTR4101PT1G with higher ID ratings.
The PG-SOT23 drain tab (pin 3) is the primary thermal path and should be soldered to a copper pad of at least 25 mm squared on the top or bottom layer for adequate heat spreading. Source pin 2 should be tied to a short, wide trace to the load to minimize parasitic inductance that could cause ringing during switching. Place a 100 nF ceramic bypass capacitor within 5 mm of the source pin if the load has long wires; this suppresses inductive spikes when switching off. Keep gate traces short and away from the drain trace to minimize dv/dt coupling that could falsely enhance the device.
Do not drive the gate above +20V or below -20V - exceeding VGS(max) of +/- 20V destroys the gate oxide. When used as a high-side P-channel switch, ensure the gate pull-up resistor to the source is at least 100 kohm to limit inrush current during switching; too low a value can cause slow turn-off due to gate charge. The BSS83PH6327XTSA1 has a maximum drain-source voltage of -60V; for 24V industrial rails with transients above 60V, add a TVS clamp. Do not parallel two BSS83P devices for higher current without gate resistors - threshold mismatch can cause thermal runaway.
When switching analog signals through the BSS83PH6327XTSA1 in source-follower mode, the on-resistance modulation with VGS creates harmonic distortion proportional to signal swing. For low-distortion analog switching (audio, precision), use matched-pair dual MOSFETs or a dedicated analog switch IC. The body diode introduces crossover distortion near 0V input - bias the source at mid-rail if bipolar signal swing is needed. Estimated: at VGS = -10V and 1 kHz, RDS(on) variation of ~5 percent introduces 0.5 percent THD in 1Vrms audio paths.
コンプライアンス情報
AEC-Q100 automotive qualification per Infineon product page. RoHS and REACH compliant per Infineon material declaration. Halogen-free per IPC-4101B definition.
