IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon
部品番号: IRLML6346TRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.37 | $3.70 |
| 100 | $0.31 | $31.00 |
| 500 | $0.26 | $130.00 |
| 1,000 | $0.22 | $220.00 |
| 3,000 | $0.18 | $540.00 |
IRLML6346TRPBF 概要
An N-channel enhancement-mode MOSFET is a three-terminal voltage-controlled switch in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. N-channel MOSFETs belong to the broader class of field-effect transistors (FETs) within discrete semiconductors, sitting beneath the hierarchy of power semiconductors, transistors, and ultimately semiconductor devices. Compared to P-shading equivalents, N-channel parts typically offer lower RDS(on) per unit silicon area, which is why they dominate low-voltage load-switch and power-ORing applications. Within the MOSFET taxonomy, the IRLML6346 sits in the low-voltage logic-level sub-30V segment optimised for battery and USB-rail switching.
Key differentiating features of the IRLML6346TRPBF include 30V VDS maximum rating, 3.4A continuous drain current at TA=25C, 63 mOhm maximum RDS(on) at VGS=2.5V, and a 1.3W maximum power dissipation rating on a 1-inch square FR4 board. Its HEXFET power-MOSFET process technology is engineered for low gate charge and fast switching, making it well suited to high-frequency DC-DC converter synchronous-rectifier slots where dead‑second losses matter. The logic-level gate threshold also eliminates the need for a gate-driver IC in many 3.3V and 5V systems.
Architecturally, the device uses Infineon's seventh-generation HEXFET die, integrating a planar cell structure with low-resistance source metallization. This produces low conduction loss at sub-1A loads and acceptable switching loss at 1-3A pulsed conditions. The device is rated for operation from -55C to +150C junction temperature, supporting industrial as well as consumer thermal envelopes.
Typical applications for the IRLML6346TRPBF include battery protection and load switching in portable electronics, USB power-path management, DC-DC converter synchronous rectification, power-ORing circuits for redundant supplies, and small motor/relay drivers. The SOT-23 footprint also makes it suitable for high-density point-of-load regulators and discrete fan controllers where board area is constrained.
When designing with this part, calculate worst-case power dissipation using P = I^2 x RDS(on) and verify that the resulting junction temperature rise stays below the 150C maximum. Use a gate series resistor of 10-100 Ohm to damp ringing, and place the device close to the controller to minimise gate-loop inductance.
This page synthesizes Infineon datasheet specifications, real-time distributor pricing, drop-in SOT-23 alternatives, and practical thermal / PCB design guidance not found in the datasheet alone.
ドロップイン代替品: IRLML6346TRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRLML6346TRPBF （同一形状・フットプリント） — 相違点: Technology, Package, MSL Level, Operating Temperature, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
IRLML6344TRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRLML2803TRPBF
✅ ドロップイン✓ 在庫あり
$0.13 / 個
データシートを見る →BSS308PEH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.11 / 個
データシートを見る →NTR4101PT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
Si2302
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMG2302
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRLML6346TRPBF 最大定格＆電気的特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) |
| RDS(on) max @ VGS=2.5V | 63 mOhm |
| Gate Drive Capability | 2.5V logic-level |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) |
| 動作接合温度 | -55C to +150C |
| パッケージ | Micro3 / SOT-23 |
| 実装タイプ | Surface Mount |
| Technology | HEXFET Power MOSFET |
| MSLレベル | 1 |
| Lead-Free Finish | Yes (PBF suffix) |
| RoHS ステータス | Compliant |
IRLML6346TRPBF ピン構成
| ピン 1 | Gate — Gate control input, logic-level 2.5V drive capable |
| ピン 2 | Source — Source terminal, connected to GND in low-side switching |
| ピン 3 | Drain — Drain terminal, switched load connection |
安全動作領域 (estimated)
主な用途
IRLML6346TRPBF の用途: 6 件s: Battery Load Switch, USB VBUS Power-Path Switch, Synchronous Rectifier in DC-DC Converters, Power-ORing for Redundant Supplies, Small DC Motor / Relay Driver, Point-of-Load (POL) Regulator High-Density Layout.
Battery Load Switch
The IRLML6346TRPBF is well suited as a low-side load switch for 1-cell Li-ion battery management. Its 30V VDS rating provides ample margin above the 4.2V full-charge voltage, while the 63 mOhm RDS(on) at 2.5V VGS lets the device be driven directly from a microcontroller GPIO, eliminating an external gate driver. With 3.4A continuous drain current and 1.3W power dissipation on 1 square inch of FR4 copper, it can sustain roughly 2A continuous in a hand-held enclosure. Compared to a Schottky diode, the IRLML6346 reduces conduction loss by ~70% and eliminates reverse-leakage current, extending battery standby time.
おすすめ
USB VBUS Power-Path Switch
In USB Type-C and legacy USB-A power-path designs, the IRLML6346TRPBF functions as a high-side or low-side load switch on the VBUS rail. Its 2.5V logic-level gate drive allows direct connection to a USB-C controller or PMIC GPIO, simplifying BOM. The 30V VDS rating tolerates USB-PD transient over-voltage events up to 20V while the 63 mOhm RDS(on) limits full-load conduction loss to roughly 200 mW at 3A. Compared to a P-channel MOSFET, the N-channel IRLML6346 typically delivers lower RDS(on) per package size, enabling smaller PCB footprints in space-constrained docks and hubs.
おすすめ
Synchronous Rectifier in DC-DC Converters
The IRLML6346TRPBF serves as the low-side synchronous-rectifier MOSFET in buck converters up to 5A load. Its HEXFET process technology minimises gate charge Qg and reverse-recovery charge Qrr, reducing switching loss versus planar MOSFETs in the same SOT-23 footprint. With 30V VDS headroom it is well-matched to 5V and 12V input rails, while the 63 mOhm RDS(on) at 2.5V VGS enables sub-100 mV dropout at moderate loads. Use a 10-100 Ohm gate resistor to damp ringing on the SW node, and co-locate the part adjacent to the high-side FET to minimise gate-loop inductance.
おすすめ
Power-ORing for Redundant Supplies
In redundant-rail designs where two supplies back up a load (e.g. mains adapter plus battery), the IRLML6346TRPBF implements a low-loss ORing switch. Two IRLML6346s placed back-to-back block reverse current when one rail collapses, eliminating the 0.3-0.7V drop of a Schottky-ORing diode. The 63 mOhm RDS(on) per device limits conduction loss to ~190 mW at 3A combined load, and the 30V VDS rating accommodates 12V or 20V bus rails. Compared to ideal-diode controller ICs, the discrete pair lowers BOM cost and reduces quiescent current to microamp levels.
おすすめ
Small DC Motor / Relay Driver
The IRLML6346TRPBF drives small DC motors, solenoids, and relay coils in portable and industrial equipment. The 3.4A continuous drain rating easily handles the inrush of 5V hobby servos or 12V automotive relays, while the 30V VDS rating tolerates flyback transients when paired with a freewheeling diode. Logic-level 2.5V gate drive lets the FET be PWM-controlled directly from a microcontroller timer output at frequencies up to 100 kHz for variable-speed or soft-start operation. Compared to bipolar transistors, the MOSFET avoids base-current losses and simplifies thermal design.
おすすめ
Point-of-Load (POL) Regulator High-Density Layout
In high-density point-of-load regulator designs the SOT-23 footprint of the IRLML6346TRPBF saves board area compared to DPAK or SO-8 alternatives. With 30V VDS and 63 mOhm RDS(on) at 2.5V gate drive, the part suits 3.3V, 5V, and 12V intermediate bus conversion in router, switch, and SSD applications. Designers stack the gate-drive trace under the source pad to minimise loop area, achieving sub-5ns switching transients. Compared to a larger-footprint MOSFET, the IRLML6346 keeps the BOM small while sustaining >90% efficiency at 1-2A loads.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRLML6346TRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRLML6344TRPBF | IRLML2803TRPBF | BSS308PEH6327XTSA1 | NTR4101PT1G | Si2302 | DMG2302 |
|---|---|---|---|---|---|---|---|
| Package | Micro3 / SOT-23 | Micro3 / SOT-23 - same | Micro3 / SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| VDS Max | 30 V | 30 V | 30 V | 30 V | 20 V | 20 V | 30 V |
| Continuous Drain Current (TA=25C) | 3.4 A | 5.0 A | 5.6 A | 2.0 A | 3.6 A | 3.1 A | 3.2 A |
| Gate Drive Level | 2.5V logic-level | 2.5V logic-level | 2.5V logic-level | 2.5V logic-level | 2.5V logic-level | 2.5V logic-level | 2.5V logic-level |
| Power Dissipation (TA=25C) | 1.3 W | 1.3 W | 1.3 W | 1.0 W | 1.0 W | 1.25 W | 1.0 W |
主な差別化要因
- Logic-level 2.5V gate drive eliminates external gate driver （vs IRLML6344TRPBF)
- Lower VDS rating allows higher current density at lower on-resistance （vs NTR4101PT1G (onsemi))
- Established Infineon HEXFET process technology and broad distribution （vs VB1330 (Chinese cross-brand))
設計ノート
Estimated: at ID=2A continuous and RDS(on)=63 mOhm, conduction loss is roughly P= I^2 x RDS(on) = 2^2 x 0.063 = 0.25W. With SOT-23 thermal resistance of approximately 100 C/W on a 1in^2 FR4 board, the junction temperature rises about 25C above ambient - well within the 150C maximum. For sustained >3A operation, add thermal vias under the source pad and increase copper area to 2-3 square inches to keep Tj below 125C.
Route the gate drive trace as a short, direct path from the controller output to the gate pin to minimise parasitic inductance. Use a 10-100 Ohm gate series resistor to damp high-frequency ringing on the gate. Place the device source pin on a continuous ground pour, and add 2-4 thermal vias under the source pad to spread heat into inner copper planes. Keep high-dv/dt drain traces away from sensitive analog signals to avoid capacitive coupling.
Do not exceed VGS=+/-12V absolute maximum; a stray ESD event on the gate can permanently damage the thin gate oxide. Always add a 10k pull-down resistor from gate to source to hold the FET off during controller reset or hot-plug events. Verify that VDS transient spikes from inductive loads stay below 30V; add a TVS or snubber if needed. Do not parallel two IRLML6346s without gate-source resistors on each device to suppress high-frequency oscillation.
コンプライアンス情報
Lead-free (PBF suffix) and RoHS-compliant per Infineon datasheet. Not AEC-Q100 qualified - select automotive-grade variants for vehicle applications. REACH compliance status confirmed by distributor listings as of 2026-09-10.
