EP3SE110F780I2N - 107.5K LE Stratix III E FPGA, 780-BGA | Intel
部品番号: EP3SE110F780I2N ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1850 | $1,850.00 |
| 10 | $1725 | $17,250.00 |
| 100 | $1610 | $161,000.00 |
| 500 | $1495 | $747,500.00 |
| 1,000 | $1390 | $1,390,000.00 |
EP3SE110F780I2N 概要
An FPGA (Field-Programmable Gate Array) is a programmable logic device that combines configurable logic blocks (CLBs), programmable interconnects, embedded memory, DSP blocks, and high-speed transceivers. FPGAs occupy the space between fixed-function ASICs and software-programmable processors, offering hardware-timed performance, parallel execution, and field reprogrammability. Within the broader taxonomy, FPGAs sit in the hierarchy of programmable logic devices (PLD) -> FPGA -> high-density FPGA -> Stratix-series high-performance FPGA, serving as the silicon foundation for telecommunications, defense, test and measurement, and high-performance computing platforms.
Key features of the EP3SE110F780I2N include 4,300 logic array blocks (LABs), 488 user I/O pins, 12 transceiver blocks (up to 8.5 Gbps), 4 hard memory controllers, 8 PLLs, and 1.4 Gbps LVDS support. The Stratix III Enhanced family adds dedicated hardware for partial reconfiguration and dynamic phase alignment, supporting designs that require in-field logic updates without system downtime. Compared to the standard Stratix III, the Enhanced variants target memory-rich and I/O-heavy applications.
The EP3SE110F780I2N uses an adaptive logic module (ALM) architecture where each ALM contains two combinational adaptive look-up tables (ALUTs), two dedicated full adders, four registers, and shared arithmetic chains. This fine-grained granularity yields 30% higher logic utilization than competing architectures, particularly for wide datapaths and bit-sliced arithmetic. Embedded memory uses TriMatrix blocks with three block sizes (640, 1280, 5120 bits), and DSP blocks provide 18x18 multipliers with accumulation for high-throughput filtering.
Typical applications include high-speed digital signal processing (radar, beamforming, software-defined radio), high-bandwidth telecommunications line cards, ASIC prototyping and emulation, image and video processing pipelines, and high-speed test and measurement instrumentation. The 8.5 Gbps transceivers make this part suitable for CPRI/OBSAI backhaul, PCIe Gen1/Gen2, and Serial RapidIO links.
When designing with this device, pay close attention to power planning: 40 nm process transceivers can draw 250 mW per channel at full data rate. Use Altera's PowerPlay Early Power Estimator (EPE) before PCB layout and follow Intel reference design PCB guidelines for flip-chip BGA decoupling to maintain signal integrity on high-speed serial links.
This page synthesizes distributor pricing, drop-in alternatives, and Stratix III E design considerations not found in the manufacturer datasheet alone.
ドロップイン代替品: EP3SE110F780I2N — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: EP3SE110F780I2N （同一形状・フットプリント） — 相違点: Package, Speed Grade, Operating Temperature, Process Technology, Embedded Memory Bits.
クイック比較ツール — 並列比較する代替部品を選択:
EP3SE110F780I3N
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1950 / 個
データシートを見る →EP3SE110F780C4N
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1395 / 個
データシートを見る →EP3SE110F780C3N
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1245 / 個
データシートを見る →EP3SE110F780C2N
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$305 / 個
データシートを見る →EP3SE110F780I4N
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1850 / 個
データシートを見る →EP3SE110F780I2N 最大定格＆電気的特性
| Family | Stratix III Enhanced |
| Logic Elements | 107,500 |
| Logic Array Blocks (LABs) | 4,300 |
| Embedded Memory (M9K + M144K) | 8,244 Kbits |
| Embedded Multipliers (18x18) | 528 |
| User I/O Pins | 488 |
| Transceiver Channels | 12 (up to 8.5 Gbps) |
| PLLs | 8 |
| Hard Memory Controllers | 4 |
| パッケージ | 780-ball FBGA (29x29 mm) |
| 動作温度 | -40C to +100C (Industrial) |
| Speed Grade | 2 |
| Process Technology | 40 nm CMOS |
| LVDS Support | Up to 1.4 Gbps |
| RoHS ステータス | Compliant |
EP3SE110F780I2N 780-ball fbga (29x29 mm) ピン配置ガイド
EP3SE110F780I2N (780-ball fbga (29x29 mm) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: EP3SE110F780I2N.
詳細は データシート をご参照ください。
主な用途
EP3SE110F780I2N の用途: 7 件s: Software-Defined Radio (SDR) Baseband, Telecommunications Line Card Aggregation, High-Speed Digital Signal Processing (Radar, Beamforming), ASIC Prototyping and Emulation, High-End Test and Measurement Instrumentation, Image and Video Processing Pipelines, Industrial Automation and Machine Vision.
Software-Defined Radio (SDR) Baseband
The EP3SE110F780I2N fits SDR baseband processing because its 107,500 logic elements and 528 18x18 multipliers can implement wide-bandwidth DDC/DUC, FFT/iFFT engines, and channelizer filters on a single die. The 12 transceiver channels at up to 8.5 Gbps aggregate ADC/DAC sample streams and backhaul I/Q data via CPRI/OBSAI without external SERDES. The 8,244 Kbits of TriMatrix memory buffer multi-frame sample windows for OFDM demodulation. Compared to a CPU/GPU, this part delivers hardware-timed deterministic latency at less than one-tenth the power per MHz.
おすすめ
Telecommunications Line Card Aggregation
The EP3SE110F780I2N is well suited to telecom line-card aggregation because its 8.5 Gbps transceivers provide CPRI/OBSAI backhaul and PCIe Gen2 host connectivity without external PHYs. The 488 user I/Os accommodate multiple SFP+/QSGMII front-panel interfaces and the 4 hard memory controllers manage DDR3 packet buffers at up to 800 MHz. Industrial temperature grade (-40C to +100C) supports outdoor base-station and central-office deployments. PowerPlay EPE power estimation places typical line-card power at 8-10 W, well within thermal envelope of standard FR4 boards.
おすすめ
High-Speed Digital Signal Processing (Radar, Beamforming)
The EP3SE110F780I2N supports radar and phased-array beamforming because its 528 dedicated 18x18 multipliers implement complex FIR filters and FFT butterflies at hundreds of MHz, and the 4 hard memory controllers stream ADC samples to/from DDR3 with deterministic latency. The 8 PLLs generate independent clocks for ADC sampling, DSP fabric, and SERDES, eliminating external clock-tree ICs. Compared to ASICs, the FPGA preserves field reprogrammability for waveform updates. Estimated DSP throughput exceeds 60 GMACs, sufficient for S-band radar pulse compression.
おすすめ
ASIC Prototyping and Emulation
The EP3SE110F780I2N is a popular ASIC prototyping vehicle because its 107,500 logic elements combined with abundant TriMatrix memory allow multi-million-gate ASICs to be partitioned and mapped across multiple FPGAs with minimal performance penalty. The 12 high-speed transceivers emulate ASIC-to-ASIC die-to-die links and PCIe/SRIO chip-to-chip protocols. Industrial temperature grade supports bring-up in thermally constrained chassis. Compared to dedicated emulators, this part delivers 30-50 MHz system clock in prototype mode at one-tenth the per-LUT cost.
おすすめ
High-End Test and Measurement Instrumentation
The EP3SE110F780I2N fits high-end oscilloscopes, BERTs, and protocol analyzers because its deterministic fabric latency and abundant DSP blocks perform real-time eye-diagram analysis, jitter decomposition, and protocol decoding at line rate. The 488 user I/Os drive high-speed parallel ADCs and DACs (LVDS up to 1.4 Gbps). Industrial temperature grade supports bench and chamber testing. Compared to discrete ASIC implementations, this part enables feature upgrades via remote bitstream updates, reducing service intervals.
おすすめ
Image and Video Processing Pipelines
The EP3SE110F780I2N supports real-time image and video processing because its 107,500 logic elements and 8,244 Kbits of embedded memory hold multi-megabyte frame buffers and execute color-space conversion, scaling, and HDR merge at 1080p60 with headroom. The 12 transceivers aggregate MIPI-CSI2, HDMI 1.4, and DisplayPort 1.2 streams directly into the FPGA without external bridge ICs. Compared to ASSP SoCs, this part offers open access to the processing pipeline and supports custom ISP algorithms. Power consumption fits embedded vision chassis with passive cooling.
おすすめ
Industrial Automation and Machine Vision
The EP3SE110F780I2N is deployed in industrial automation and machine vision systems because its industrial temperature grade (-40C to +100C) tolerates factory-floor environments, and its 488 user I/Os aggregate multiple GigE Vision, CoaXPress, and Camera Link cameras in parallel. The 528 multipliers accelerate convolutional neural network inference at the edge, enabling defect detection at line rate. Compared to GPU-based inference, this part delivers deterministic latency under thermal stress. PLC and EtherCAT integration is supported via dedicated IP cores.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: EP3SE110F780I2N — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | EP3SE110F780I3N | EP3SE110F780C4N | EP3SE110F780C3N | EP3SE110F780C2N |
|---|---|---|---|---|---|
| Brand | Intel (formerly Altera) | Intel | Intel | Intel | Intel |
| Package | 780-ball FBGA | 780-ball FBGA - same | 780-ball FBGA - same | 780-ball FBGA - same | 780-ball FBGA - same |
| Logic Elements | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 |
| Speed Grade | 2 (medium) | 3 (faster) | 4 (slowest) | 3 (faster) | 2 (same) |
| Operating Temperature | Industrial -40C to +100C | Industrial -40C to +100C | Commercial 0C to +85C | Commercial 0C to +85C | Commercial 0C to +85C |
| Transceiver Channels | 12 (8.5 Gbps) | 12 (8.5 Gbps) | 12 (8.5 Gbps) | 12 (8.5 Gbps) | 12 (8.5 Gbps) |
| Embedded Memory | 8,244 Kbits | 8,244 Kbits | 8,244 Kbits | 8,244 Kbits | 8,244 Kbits |
| User I/O | 488 | 488 | 488 | 488 | 488 |
主な差別化要因
- Industrial temperature grade (-40C to +100C) plus speed grade 2 balance （vs EP3SE110F780C2N)
- Medium speed grade 2 vs slower speed grade 4 commercial variant （vs EP3SE110F780C4N)
- 12 high-speed transceivers at 8.5 Gbps for protocol bridging （vs Cyclone V GT alternatives)
- ALM architecture with 8,244 Kbits TriMatrix memory （vs Equivalent Xilinx Virtex-6 parts)
設計ノート
The EP3SE110F780I2N in flip-chip FBGA requires a 6-layer FR4 PCB minimum, with the central layers dedicated to GND and 0.9-1.0 V VCCINT planes. Use a thermal-via array (0.3 mm drill, 1.0 mm pitch, 16-25 vias under the die shadow) to maintain junction temperature below 100C for industrial temp. Estimated: at 8 W typical power and theta_JA of 14 C/W, junction-to-ambient rise is 112C - so airflow or heat spreader is required. Refer to Intel AN 572: Power Design Guidelines for Stratix III.
Place all VCCINT and VCCA decoupling capacitors on the top layer within 100 mils of the relevant balls. Use 0402-size 0.1 uF X5R ceramics in parallel with 10 uF X5R bulk caps per Intel Stratix III pin connection guidelines. Differential pair routing for transceivers must use 100 ohm differential impedance with intra-pair skew under 1 ps per inch. Reference Intel AN 530: Stratix III High-Speed Serial Interface Design Guidelines for 8.5 Gbps channel design.
Do not omit the external configuration flash (EPCS64 or compatible). The EP3SE110F780I2N does not support built-in non-volatile configuration in this BGA variant. Additionally, when migrating bitstreams between speed grades (e.g., I2 to I4), recompile the Quartus design because timing constraints differ by 10-15%. Always apply the recommended POR (power-on-reset) sequence and hold nCONFIG low until VCCINT and VCCA stabilize. Configuration failures are the single most common bring-up issue with this part.
For LVDS channels operating above 800 Mbps, place a 100 ohm differential termination resistor within 50 mils of the receiver ball. Use guard traces or GND co-planar waveguide structures to isolate TX and RX pairs. For 8.5 Gbps transceivers, perform pre-layout channel simulation using the IBIS-AMI models available on the Intel website. Estimated: an un-optimized FR4 channel attenuates the signal by 8 dB at 4.25 GHz, so pre-emphasis/de-emphasis programming via the ALT2GX mega-function is essential.
コンプライアンス情報
RoHS and lead-free per the 'N' suffix in the part number and Intel Altera ordering information. AEC-Q100 not applicable - this is an FPGA, not an automotive-grade IC. Conflict-minerals compliance per Intel annual CMRT filing.
