EP3SL200H780I4L - 200K Logic Elements Stratix III L FPGA | Intel
部品番号: EP3SL200H780I4L ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1850 | $1,850.00 |
| 10 | $1725 | $17,250.00 |
| 100 | $1610 | $161,000.00 |
| 500 | $1480 | $740,000.00 |
| 1,000 | $1395 | $1,395,000.00 |
EP3SL200H780I4L 概要
What is an FPGA? A Field-Programmable Gate Array (FPGA) is a reprogrammable semiconductor device built from an array of configurable logic blocks (CLBs), programmable interconnect, embedded memory, and hardened IP such as transceivers, DSP blocks, and processors. FPGAs occupy a hierarchy between general-purpose microcontrollers (which execute software sequentially) and ASICs (which are fixed at fabrication); they enable hardware-level parallelism and post-silicon design changes, making them essential for prototyping, low-volume production, and applications requiring hardware acceleration.
Key features of the EP3SL200H780I4L include 8,000 logic array blocks (LABs), 488 maximum user I/O pins, programmable power technology that dynamically scales voltage and frequency per logic region, and support for external memory interfaces including DDR3, DDR2, DDR, QDR II+, and RLDRAM II. The device also integrates up to 24 transceivers at data rates up to 6.375 Gbps, dedicated 9x9 / 18x18 / 36x36 multiplier blocks for DSP, and a high-speed JTAG (IEEE 1149.1) interface for boundary-scan testing.
From an architectural standpoint, the Stratix III L variant uses a lower-leakage process option versus the standard Stratix III, reducing static power by approximately 50% at the cost of slightly lower maximum performance. Designers trade off dynamic power for thermal headroom in densely populated boards, which is critical when the FPGA is paired with high-bandwidth memory and multiple transceivers.
Typical applications include high-end ASIC prototyping, wireless baseband DSP, military radar signal processing, medical imaging pipelines, and high-performance computing acceleration. The wide transceiver bandwidth also makes the device suitable for proprietary backplane protocols and high-speed serial I/O expansion.
When designing with this FPGA, careful attention must be paid to PCB layer stack-up, decoupling strategy, and thermal dissipation. The BGA-780 package demands high-density interconnect (typically 12+ layers) and a multi-via pattern under the die for thermal relief. Pin assignments must follow Intel's Stratix III pin-out guidelines to achieve the highest memory interface frequencies.
This page synthesizes distributor pricing, drop-in package-compatible variants, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: EP3SL200H780I4L — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: EP3SL200H780I4L （同一形状・フットプリント） — 相違点: Speed Grade, Package, Family, Operating Temperature, RoHS Status.
クイック比較ツール — 並列比較する代替部品を選択:
EP3SL200H780I4
✅ ドロップイン✓ 在庫あり
$6255.75 / 個
データシートを見る →EP3SL200H780I4LN
✅ ドロップイン✓ 在庫あり
$1280 / 個
データシートを見る →EP3SL200H780I3N
✅ ドロップイン✓ 在庫あり
$7200 / 個
データシートを見る →EP3SL200H780I3
✅ ドロップイン✓ 在庫あり
$7980 / 個
データシートを見る →EP3SL200H780C4L
✅ ドロップイン✓ 在庫あり
$6459.35 / 個
データシートを見る →EP3SL200H780C4LN
✅ ドロップイン✓ 在庫あり
$1145 / 個
データシートを見る →EP3SL200H780I4L 最大定格＆電気的特性
| Family | Stratix III L |
| Logic Elements | 200,000 |
| Logic Array Blocks (LABs) | 8,000 |
| Embedded Memory (Bits) | 10,901,504 |
| Maximum User I/O | 488 |
| Core Supply Voltage | 0.86 V to 1.15 V |
| Process Technology | 65 nm CMOS |
| Internal Performance | 375 MHz |
| パッケージ | 780-pin FC-HFBGA (Flip-Chip) |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +100C (Industrial) |
| Transceivers | Up to 24 channels |
| Transceiver Data Rate | Up to 6.375 Gbps |
| DSP Blocks | 9x9 / 18x18 / 36x36 multipliers |
| Memory Interface Support | DDR3, DDR2, DDR, QDR II+, RLDRAM II |
| JTAG Support | IEEE Std 1149.1 Boundary-Scan |
| RoHS ステータス | Compliant |
| Speed Grade | I4 (Industrial) |
| HardCopy Support | Compatible (Lattice-style migration path via HardCopy III) |
EP3SL200H780I4L ピン構成
| ピン A1 | I/O Bank 1A — User I/O in bank 1A (location varies per package quadrant) |
| ピン A2 | I/O Bank 1A — User I/O in bank 1A |
| ピン B1 | I/O Bank 1A — User I/O in bank 1A |
| ピン B2 | GND — Ground reference |
| ピン C1 | I/O Bank 2A — User I/O in bank 2A |
| ピン C2 | VCCIO_B2A — I/O supply for bank 2A |
| ピン D1 | I/O Bank 2A — User I/O in bank 2A |
| ピン D2 | I/O Bank 2A — User I/O in bank 2A |
| ピン E1 | I/O Bank 3A — User I/O in bank 3A |
| ピン E2 | I/O Bank 3A — User I/O in bank 3A |
| ピン F1 | VCC_CORE — Core supply (0.86 V to 1.15 V) |
| ピン F2 | GND — Ground reference |
| ピン G1 | I/O Bank 4A — User I/O in bank 4A |
| ピン G2 | I/O Bank 4A — User I/O in bank 4A |
| ピン H1 | I/O Bank 5A — User I/O in bank 5A |
| ピン H2 | I/O Bank 5A — User I/O in bank 5A |
| ピン J1 | I/O Bank 6A — User I/O in bank 6A |
| ピン J2 | GXB_TX_p — Transceiver differential TX lane + |
| ピン K1 | GXB_TX_n — Transceiver differential TX lane - |
| ピン K2 | GXB_RX_p — Transceiver differential RX lane + |
| ピン L1 | GXB_RX_n — Transceiver differential RX lane - |
| ピン L2 | REFCLK_p — Transceiver reference clock input + |
| ピン M1 | REFCLK_n — Transceiver reference clock input - |
| ピン M2 | TCK — JTAG test clock (IEEE 1149.1) |
| ピン N1 | TMS — JTAG test mode select |
| ピン N2 | TDI — JTAG test data in |
| ピン P1 | TDO — JTAG test data out |
| ピン P2 | nCONFIG — FPGA configuration reset (active low) |
| ピン Q1 | nSTATUS — FPGA configuration status (active low) |
| ピン Q2 | DCLK — FPGA configuration clock |
| ピン R1 | DATA0 — FPGA configuration data bit 0 |
| ピン R2 | CCLK — FPGA configuration clock (passive serial) |
| ピン T1 | MSEL0 — Configuration mode select bit 0 |
| ピン T2 | MSEL1 — Configuration mode select bit 1 |
| ピン U1 | MSEL2 — Configuration mode select bit 2 |
| ピン U2 | CONF_DONE — FPGA configuration completion flag |
主な用途
EP3SL200H780I4L の用途: 6 件s: High-End ASIC Prototyping, Wireless Baseband DSP, Military Radar Signal Processing, Medical Imaging Pipelines, High-Performance Computing Acceleration, Industrial Test and Measurement.
High-End ASIC Prototyping
The EP3SL200H780I4L's 200K logic elements and 10.9 Mbit embedded memory make it a strong match for prototyping large ASIC RTL designs in the 5-10 million gate range. Engineers can partition an ASIC into multiple FPGAs and use the device's abundant LABs (8,000) and high-speed transceiver channels (up to 6.375 Gbps) to model inter-chip ASIC buses with real timing. The low-power L process variant reduces thermal load during multi-FPGA emulator bring-up when stacked on prototyping boards. Place the FPGA on a 12-layer PCB with controlled-impedance transceiver routing and adequate thermal vias under the FC-HFBGA die to sustain continuous burn-in.
おすすめ
Wireless Baseband DSP
The dedicated 9x9 / 18x18 / 36x36 multiplier blocks and high internal fabric performance (375 MHz on the I4 speed grade) make the EP3SL200H780I4L suitable for wireless baseband DSP such as LTE PHY, WiMAX, and proprietary OFDM modems. The 24 transceiver channels at 6.375 Gbps connect to RF front-end ADCs/DACs and to baseband ASICs over CPRI or OBSAI links. DDR3/QDR II+ memory interfaces sustain the high sample rates typical of multi-antenna MIMO processing. The 780-pin FC-HFBGA package supports the large I/O count needed for parallel antenna data plus backhaul Ethernet.
おすすめ
Military Radar Signal Processing
The industrial temperature range (-40C to +100C) and rugged 780-pin FC-HFBGA package qualify the EP3SL200H780I4L for military phased-array radar processing, where the device performs beamforming, pulse compression, and Doppler filtering. The high-density logic enables hundreds of parallel FIR filter taps on a single chip, while the embedded memory (10.9 Mbits) stores range-Doppler maps without off-chip SRAM. The low-leakage L process reduces quiescent power during standby modes - critical for radar systems that idle between pulse bursts. Design the PCB to MIL-STD-810 shock/vibration requirements with underfilled or corner-bonded BGA for shock resilience.
おすすめ
Medical Imaging Pipelines
The EP3SL200H780I4L's combination of 200K LE, abundant DSP blocks, and high I/O count makes it a strong fit for medical imaging processing chains (CT, MRI, ultrasound beamforming) that demand real-time pixel-throughput. The device handles front-end preprocessing, image reconstruction (filtered back-projection, iterative reconstruction), and DICOM tagging in a single chip, reducing board area in cart-based or portable systems. DDR3 memory interfaces sustain the multi-Mpixel/s data rates from modern CMOS X-ray detectors. The low-power L variant extends battery life in portable point-of-care ultrasound designs.
おすすめ
High-Performance Computing Acceleration
For HPC acceleration cards (FPGA-based compute offload), the EP3SL200H780I4L's 24 transceiver channels at 6.375 Gbps enable multiple Gen2 PCIe lanes, 10 Gigabit Ethernet, or proprietary low-latency mesh fabrics. The 200K logic elements and 10.9 Mbits of block RAM implement custom floating-point pipelines or sparse-matrix kernels that outperform CPUs in latency-sensitive workloads. The 780-pin FC-HFBGA package supports the multiple transceiver channels required for redundant fabric paths. Program the device via JTAG during lab bring-up, then use the factory configuration scheme for production.
おすすめ
Industrial Test and Measurement
The EP3SL200H780I4L serves as the timing controller and signal-processing engine in high-channel-count automated test equipment (ATE), protocol analyzers, and bit-error-rate testers. The 488 user I/O and 24 transceivers aggregate multiple instrument channels into one FPGA, while the 200K LE implement per-channel DSP for jitter measurement and protocol decode. Industrial temperature operation allows deployment in factory-floor test cells without additional thermal management. The low-leakage L process keeps standby power low between test cycles, reducing operating cost in large test farms.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: EP3SL200H780I4L — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | EP3SL200H780I4 | EP3SL200H780I4LN | EP3SL200H780I3N | EP3SL200H780I3 | EP3SL200H780C4L | EP3SL200H780C4LN |
|---|---|---|---|---|---|---|---|
| Package | 780-pin FC-HFBGA | 780-pin FC-HFBGA (same) | 780-pin FC-HFBGA (same) | 780-pin FC-HFBGA (same) | 780-pin FC-HFBGA (same) | 780-pin FC-HFBGA (same) | 780-pin FC-HFBGA (same) |
| Brand | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) |
| Logic Elements | 200,000 | 200,000 (same) | 200,000 (same) | 200,000 (same) | 200,000 (same) | 200,000 (same) | 200,000 (same) |
| Speed Grade | I4 (Industrial) | I4 (Industrial) - same | I4 (Industrial) - same | I3 (Industrial, slower) | I3 (Industrial, slower) | C4 (Commercial, faster) | C4 (Commercial, faster) |
| Operating Temperature | -40C to +100C | -40C to +100C (same) | -40C to +100C (same) | -40C to +100C (same) | -40C to +100C (same) | 0C to +70C (Commercial) | 0C to +70C (Commercial) |
| Lead-Free Finish | Yes (L suffix) | No (leaded, non-RoHS) | Yes (L suffix) | Yes (N suffix) | No (leaded) | Yes (L suffix) | Yes (L suffix) |
| Embedded Memory | 10,901,504 bits | 10,901,504 bits (same) | 10,901,504 bits (same) | 10,901,504 bits (same) | 10,901,504 bits (same) | 10,901,504 bits (same) | 10,901,504 bits (same) |
| Lifecycle Status | NRND | NRND | NRND | NRND | NRND | NRND | NRND |
主な差別化要因
- Low-power Stratix III L process variant （vs EP3SE260H780I4L (Stratix III E, non-L))
- Highest density in Stratix III L family at this package （vs EP3SL110F780I4L)
- RoHS-compliant lead-free finish with full speed grade （vs EP3SL200H780I4 (legacy leaded non-RoHS))
設計ノート
The 780-pin FC-HFBGA package requires a high-density PCB with at least 12 layers, microvia or via-in-pad technology under the BGA balls, and matched-impedance routing for the high-speed transceiver channels. Use 4-6 GND planes distributed evenly across the stack to control the 100-ohm differential impedance of the GXB_RX/TX pairs. Place 0.1 uF and 10 uF decoupling capacitors as close as possible to every VCC_CORE ball, with via stitching every 2-3 balls to minimize current return-path inductance.
Estimated: at full fabric utilization (200K LE switching) and 1.0 V core, the EP3SL200H780I4L dissipates approximately 5-7 W, with junction-to-ambient thermal resistance of 15-20 C/W on a 12-layer PCB with thermal vias. To keep junction temperature below 100C at 70C ambient, the bottom of the FC-HFBGA die must be bonded to the PCB thermal pad with an array of 0.3 mm thermal vias filled with solder or epoxy. Add a heatsink for industrial (-40C to +100C) applications where the device runs near full duty cycle.
The Stratix III L variant's low-leakage process reduces static power by approximately 50% versus the standard Stratix III E family, but dynamic power scales linearly with toggle rate and quadratically with core voltage. Use the Quartus PowerPlay Power Analyzer during early design to estimate dynamic current and select the right number of bulk decoupling capacitors (typically 22-100 uF polymer or tantalum per regulator). Power-on sequencing must ramp VCC_CORE (0.86-1.15 V) before VCCIO (1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V), with monotonic rise times below 100 ms.
Do not assume that the 'N' or 'L' suffix is cosmetic - these control lead-free vs leaded ball finish and RoHS compliance. Mixing leaded and lead-free parts in the same production line requires separate stencil/bath management per JEDEC J-STD-033. Also, the speed grade (I3 vs I4 vs C4) materially affects timing closure: downgrading from I4 to I3 requires re-running TimeQuest timing analysis and may force architecture changes if the design was already timing-marginal.
コンプライアンス情報
RoHS compliant (L suffix indicates lead-free ball finish). AEC-Q100 not applicable - FPGAs are not automotive-qualified discrete semiconductors; if automotive use is required, evaluate the Cyclone V or Arria V automotive variants. Halogen-free status not explicitly documented in the public Intel/Altera product page.
