FDS8880 - 30V 11.6A N-Channel PowerTrench MOSFET | onsemi
部品番号: FDS8880 ⚠ ラストタイムバイ| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.51 | $0.51 |
| 10 | $0.44 | $4.40 |
| 100 | $0.38 | $38.00 |
| 500 | $0.34 | $170.00 |
| 1,000 | $0.3082 | $308.20 |
FDS8880 概要
An N-channel power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the power-management hierarchy, MOSFETs sit between gate drivers and the load, translating low-voltage control signals into high-current switching action. Power MOSFETs such as the FDS8880 are the workhorses of DC/DC converters, motor drives, and load-switch circuits.
The FDS8880 was designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), and fast switching speed, using Fairchild (now onsemi) PowerTrench trench technology to achieve extremely low on-resistance in the compact 8-SOIC footprint.
Key features include a 30 V VDS rating suitable for 12 V and 24 V intermediate bus rails, high power and current handling capability for its package class, and a 2.5 W power dissipation rating at 25 C ambient. The device is RoHS compliant.
Typical applications include synchronous-rectifier and main-switch roles in step-down converters, point-of-load power supplies, and DC motor control circuits where low conduction loss matters.
Design consideration: because the part is in Last Shipments status, new designs should qualify a second source early; also verify VGS drive level (4.5 V vs 10 V) since rDS(on) differs meaningfully between the two ratings.
This page synthesizes distributor pricing, lifecycle status, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: FDS8880 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
VBA1307
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FDS8880 最大定格＆電気的特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 11.6 A (Ta) |
| On-Resistance rDS(on) @ VGS = 10 V | 10 mOhm |
| On-Resistance rDS(on) @ VGS = 4.5 V | 12 mOhm |
| Gate-Source Voltage (VGS) | 20 V (max absolute rating) |
| Power Dissipation (Pd) | 2.5 W (Ta) |
| Technology | PowerTrench (trench MOSFET) |
| Configuration | Single MOSFET |
| パッケージ | 8-SOIC (SO-8) Surface Mount |
| 実装タイプ | Surface Mount |
| Typical Application | DC/DC converters (synchronous or conventional PWM) |
| Optimization | Low gate charge, low rDS(on), fast switching |
| RoHS ステータス | Compliant |
| ライフサイクル状態 | Last Shipments |
FDS8880 ピン構成
| ピン 1 | Source — Source connection (internally tied to pins 2 and 3) |
| ピン 2 | Source — Source connection (internally tied to pins 1 and 3) |
| ピン 3 | Source — Source connection (internally tied to pins 1 and 2) |
| ピン 4 | Gate — Gate control input |
| ピン 5 | Drain — Drain connection (internally tied to pins 6, 7, 8) |
| ピン 6 | Drain — Drain connection (internally tied to pins 5, 7, 8) |
| ピン 7 | Drain — Drain connection (internally tied to pins 5, 6, 8) |
| ピン 8 | Drain — Drain connection (internally tied to pins 5, 6, 7) |
安全動作領域 (Estimated from rated limits)
主な用途
FDS8880 の用途: 6 件s: Synchronous Buck DC/DC Converters, Conventional PWM Step-Down Converters, DC Motor Control and Half-Bridge Stages, Point-of-Load Power Supplies, Load Switching and Hot-Swap Circuits, Battery-Powered and Portable Equipment.
Synchronous Buck DC/DC Converters
The FDS8880 was explicitly designed to improve overall efficiency of DC/DC converters using synchronous PWM controllers. In the low-side synchronous-rectifier position, its 10 mOhm on-resistance limits conduction loss to about 1.34 W at 11.6 A (estimated: I2 x R), directly improving converter efficiency. Its low gate charge reduces both switching transition loss and gate-drive power at high switching frequencies, while the 30 V VDS rating comfortably covers 12 V input rails with margin. Placed with a complementary high-side switch and a PWM controller, it delivers compact point-of-load conversion in the standard SO-8 footprint.
おすすめ
Conventional PWM Step-Down Converters
For non-synchronous (diode-or-FET) buck topologies, the FDS8880 serves as the main switching element. Fairchild's datasheet states the device was optimized for low gate charge, low rDS(on), and fast switching speed, the three parameters that dominate hard-switching loss. Its 12 mOhm on-resistance at VGS = 4.5 V also permits logic-level drive from 5 V controllers, simplifying gate-drive circuitry in low-voltage systems. The 30 V rating provides adequate headroom for freewheeling spikes on 12 V and 24 V rails when paired with an appropriate catch diode and snubber.
おすすめ
DC Motor Control and Half-Bridge Stages
In brushed-DC motor drives and small half-bridge stages, the FDS8880 provides low conduction loss switching at motor currents within its 11.6 A rating. The standard SO-8 pinout (source pins 1-3, gate pin 4, drain pins 5-8) allows parallel or half-bridge layouts with minimal loop inductance. Its PowerTrench trench process delivers fast switching that reduces dead-time requirements; however, designers must manage PCB thermal spreading since 2.5 W dissipation in SO-8 demands generous copper area, and inductive load switching requires VDS transient protection below the 30 V rating.
おすすめ
Point-of-Load Power Supplies
Distributed-power architectures use point-of-load (POL) converters to step 12 V or intermediate buses down to processor and ASIC voltages. The FDS8880 fits the low-side role of compact POL modules where its 10 mOhm rDS(on) minimizes dropout and conduction loss at multi-amp loads, and its 30 V rating covers common 12 V intermediate bus inputs. Its fast switching supports the high frequencies needed for small magnetics in dense board layouts. The SO-8 surface-mount package enables automated assembly and reflow in high-volume POL designs.
おすすめ
Load Switching and Hot-Swap Circuits
The FDS8880 functions as a high-current load switch driven from a controller or small-signal gate driver. With 10 mOhm on-resistance, voltage drop at 5 A is only 50 mV and dissipation only 250 mW (estimated), preserving supply accuracy downstream. The 20 V maximum gate-source rating requires a zener clamp or driver with controlled gate voltage when switching high rails. Soft-start inrush limiting via gate RC is recommended in hot-swap designs to keep the operating point inside the safe operating area during turn-on transients.
おすすめ
Battery-Powered and Portable Equipment
In portable and battery-powered systems, the FDS8880's logic-level rDS(on) of 12 mOhm at VGS = 4.5 V permits direct drive from low-voltage controllers, eliminating dedicated gate-drive supplies. Low on-resistance translates to minimal battery power wasted as heat in power-path and load-switch roles. Its compact SO-8 surface-mount package conserves board area in handheld designs. Designers should verify the 30 V VDS ceiling against battery-pack transient behavior, particularly for multi-cell lithium stacks with inductive load paths.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: FDS8880 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | VBA1307 |
|---|---|---|
| Package | 8-SOIC (SO-8) | SOIC-8 (SO-8) - same footprint |
| Brand | onsemi | Will Semiconductor (VBsemi) |
| Drain-Source Voltage | 30 V | 30 V class |
| Lifecycle Status | Last Shipments | Active (recommended for new designs) |
| RoHS Compliance | Compliant | Compliant |
主な差別化要因
- Very low on-resistance for SO-8 class （vs VBA1307)
- Low gate charge enables high-frequency switching （vs Generic 30 V SO-8 MOSFETs)
- Established industry footprint （vs VBA1307)
設計ノート
The FDS8880 dissipates up to 2.5 W at 25 C ambient in the 8-SOIC package. Estimated: at full 11.6 A continuous load with 10 mOhm rDS(on), conduction loss is approximately 1.34 W (I^2 x R), which is within rating but consumes over half the thermal budget. Maximize copper area under the drain pads (pins 5-8) and source pads (pins 1-3), and use thermal vias to inner layers when ambient temperatures exceed 50 C or airflow is absent.
Drive the gate with the full available voltage: rDS(on) is 10 mOhm at VGS = 10 V versus 12 mOhm at VGS = 4.5 V, a 20% conduction-loss penalty at logic-level drive. Respect the 20 V absolute maximum VGS rating - add a 15 V zener clamp between gate and source when the driver can exceed this. In synchronous converters, enforce dead-time to prevent shoot-through conduction losses that exceed the 2.5 W package rating.
Keep the gate-drive loop (driver output, gate pin 4, source return) as short and narrow as possible to minimize parasitic inductance that causes gate ringing and spurious turn-on. Place a low-ESR decoupling capacitor within a few millimeters of the drain-source loop in switching applications. Because the FDS8880 is fast-switching, a small gate resistor (2-10 ohm) can damp ringing at a small cost in switching loss.
The part is in Last Shipments status per the onsemi product page. Do not start new designs without qualifying a second source such as the pin-compatible VBA1307. Also, the 30 V VDS rating leaves only 25% margin on 24 V rails - verify switching transients with an oscilloscope under worst-case load and add a snubber or TVS if peaks approach 30 V, since avalanche energy capability is limited in this small package.
コンプライアンス情報
RoHS compliant per digchip datasheet excerpt for the FDS8880. Other compliance attributes not stated in provided data.
