2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
部品番号: 2EDN7524GXTMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.68 | $16.80 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
| 3,000 | $0.82 | $2,460.00 |
2EDN7524GXTMA1 概要
A gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, FPGA, or DSP) and a high-power discrete switch (MOSFET, IGBT, or GaN HEMT). It provides level shifting, high peak-current drive, and isolation of the controller from the switching transients on the power stage. Within the system hierarchy, the 2EDN7524G belongs to the gate-driver family, which sits below the system MCU and above the power-switching devices in DC-DC converters, motor drives, and Class-D audio amplifiers.
Key differentiating specifications include 5 A peak source/sink drive current (sufficient for sub-100 ns switching of large MOSFETs), 1 ns channel-to-channel delay matching (critical for synchronous-rectifier timing), a wide -10 V to +20 V input voltage tolerance on the logic pins, and a propagation delay of around 20 ns. The PG-WSON-8-1 package with an exposed pad provides low thermal resistance and a compact 3 mm x 3 mm footprint for high-density power designs.
The device uses a non-inverting logic topology and provides separate source/sink output stages that can be paralleled for higher drive current. Internal Under-Voltage Lockout (UVLO) protects the power stage by holding the outputs low until the supply rail is stable. The 5 A drive strength enables fast turn-on/turn-off transitions, reducing switching losses in high-frequency applications.
Typical applications include synchronous-rectifier drive in DC-DC buck/boost converters, half-bridge and full-bridge converters, Class-D audio amplifiers, motor-drive power stages, and GaN-based point-of-load converters. Its 1 ns delay matching makes it particularly valuable in synchronous-rectifier and half-bridge topologies where timing skew directly converts to shoot-through losses.
When designing with this part, place bypass capacitors as close as possible to VCC and GND. Use a 4-layer PCB layout with a continuous ground plane under the exposed thermal pad to manage switching transients. Always verify that the gate-drive voltage level matches the requirements of the driven MOSFET or GaN device; for standard MOSFETs, 10 V drive is typical, while enhancement-mode GaN HEMTs often require only 5-6 V.
This page synthesizes distributor pricing, drop-in alternatives drawn from the Infineon 2EDN EiceDRIVER family and competitors, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: 2EDN7524GXTMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 2EDN7524GXTMA1 （同一形状・フットプリント） — 相違点: Package, Input Logic Compatibility, Driver Type, Input Type, RoHS Status.
クイック比較ツール — 並列比較する代替部品を選択:
2EDN7534FXTMA1
✅ ドロップイン✓ 在庫あり
$0.71 / 個
データシートを見る →2EDN8534FXTMA1
✅ ドロップイン✓ 在庫あり
$1.05 / 個
データシートを見る →2EDN8524RXUMA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
1EDN7126GXTMA1
✅ ドロップイン✓ 在庫あり
$0.29 / 個
データシートを見る →1EDN7146GXTMA1
✅ ドロップイン✓ 在庫あり
$1.05 / 個
データシートを見る →1EDN7550BXTSA1
✅ ドロップイン✓ 在庫あり
$0.59 / 個
データシートを見る →2EDN7524GXTMA1 最大定格＆電気的特性
| Product Type | Low-side gate driver IC |
| Number of Channels | 2 (dual) |
| Drive Current (Source/Sink) | 5 A peak |
| Input Logic | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | -10 V to +20 V on logic pins |
| Channel-to-Channel Delay Matching | 1 ns |
| Output Stage | Rail-to-rail, separate source/sink |
| UVLO Protection | Yes |
| 動作温度 | -40 C to +125 C |
| パッケージ | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
| Target Devices | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |
2EDN7524GXTMA1 ピン構成
| ピン 1 | IN1 — Logic input for channel 1 (TTL/CMOS, -10 V to +20 V tolerant) |
| ピン 2 | GND — Ground reference |
| ピン 3 | IN2 — Logic input for channel 2 (TTL/CMOS, -10 V to +20 V tolerant) |
| ピン 4 | VCC — Driver supply voltage (4.5 V to 20 V) |
| ピン 5 | OUT2 — Gate drive output for channel 2 (rail-to-rail) |
| ピン 6 | PGND — Power ground for output stage |
| ピン 7 | OUT1 — Gate drive output for channel 1 (rail-to-rail) |
| ピン 8 | EN — Enable pin (active-high, may be tied to VCC if unused) |
主な用途
2EDN7524GXTMA1 の用途: 6 件s: Synchronous-Rectifier Drive in DC-DC Converters, Half-Bridge and Full-Bridge Power Converters, Class-D Audio Amplifier Power Stage, Brushless DC (BLDC) Motor Drive Power Stage, GaN-Based Point-of-Load Converters, Industrial SMPS Primary-Side Drive.
Synchronous-Rectifier Drive in DC-DC Converters
The 2EDN7524GXTMA1 is purpose-built for synchronous-rectifier drive in buck, boost, and buck-boost converters. Its 1 ns channel-to-channel delay matching ensures the high-side and low-side MOSFETs switch with near-perfect synchronization, minimizing dead time and body-diode conduction losses. The 5 A peak source/sink drive produces sub-20 ns switching transitions on 30-100 V MOSFETs, dramatically reducing switching loss at 500 kHz-2 MHz operation. The -10 V to +20 V input tolerance also protects against ground-bounce transients that occur during hard switching, eliminating the external TVS clamps often required on competing drivers. In a 12 V-to-1 V point-of-load converter, pairing the 2EDN7524G with two OptiMOS or StrongIRFET devices yields >95% efficiency at full load.
おすすめ
Half-Bridge and Full-Bridge Power Converters
In half-bridge and full-bridge topologies used in telecom rectifiers, solar inverters, and motor drives, the 2EDN7524GXTMA1 provides two tightly-matched channels that drive the high-side and low-side switches of each leg. The 1 ns matching directly controls shoot-through risk; even 5 ns of skew at high dV/dt can cause catastrophic cross-conduction. With 5 A drive strength, the 2EDN7524G can switch 600 V superjunction MOSFETs in under 50 ns, well within the safe timing window for hard-switched bridge converters. The driver's TTL/CMOS input compatibility also allows direct connection to digital controllers without level shifters. The PG-WSON-8-1 exposed pad keeps the dual-driver junction temperature manageable even at 1 MHz PWM operation.
おすすめ
Class-D Audio Amplifier Power Stage
The 2EDN7524GXTMA1 drives the output MOSFETs in Class-D audio amplifiers, where its 5 A peak current and 1 ns channel matching translate directly into audio fidelity. Mismatched timing in Class-D output stages creates dead-time distortion that audibly degrades THD+N; the 1 ns matching of the 2EDN7524G keeps THD+N below 0.01% even at high output levels. The rail-to-rail output stage ensures the MOSFET gate is driven fully on and fully off, minimizing R_DS(on) losses that would otherwise waste battery life in portable speakers. The wide -10 V/+20 V input tolerance also makes the driver robust against ground bounce from the high-current audio output stage. In portable and home-audio designs, the PG-WSON-8-1 footprint enables compact PCB layouts next to the output inductors.
おすすめ
Brushless DC (BLDC) Motor Drive Power Stage
In three-phase BLDC motor drives, six MOSFETs are switched in complementary pairs per phase. The 2EDN7524GXTMA1's two-channel architecture maps directly to one half-bridge leg, requiring only three devices per motor (vs. three single-channel drivers). Its 1 ns channel-to-channel matching prevents shoot-through during PWM commutation, which would otherwise damage the MOSFETs and reduce efficiency. The 5 A drive strength supports high-current motor phases (30-100 A peak) by sourcing/sinking gate charge quickly, allowing PWM frequencies up to 100 kHz for silent motor operation. The -10 V/+20 V input tolerance also protects against the severe ground bounce seen when the motor inductance forces rapid current reversals. Industrial and e-mobility BLDC drives benefit from the driver's compact PG-WSON-8-1 footprint.
おすすめ
GaN-Based Point-of-Load Converters
The 2EDN7524GXTMA1 is explicitly designed to drive GaN power switching devices in addition to silicon MOSFETs. Enhancement-mode GaN HEMTs switch 5-10x faster than silicon MOSFETs, demanding a gate driver with sub-20 ns propagation delay and very tight channel matching; the 2EDN7524G delivers both. Its rail-to-rail output stage provides the 5-6 V gate-drive levels required by typical GaN devices, and the low-output-impedance driver stage prevents the parasitic turn-on that plagues GaN designs. The -10 V/+20 V input tolerance further protects against the high dV/dt-induced transients common in GaN half-bridges. In 48 V-to-1 V point-of-load converters for data-center and telecom applications, the 2EDN7524G enables switching frequencies above 2 MHz while maintaining >93% efficiency.
おすすめ
Industrial SMPS Primary-Side Drive
The 2EDN7524GXTMA1 can drive the primary-side MOSFETs in industrial switch-mode power supplies (SMPS) where its 5 A capability supports fast switching of high-voltage superjunction devices. Although it is a low-side driver, its inputs can be referenced to the switching node in bootstrapped high-side configurations when paired with a level shifter or bootstrap diode. The 1 ns matching supports interleaved PFC and LLC topologies where channel-to-channel synchronization directly impacts efficiency and EMI. The PG-WSON-8-1 package with exposed thermal pad keeps the junction temperature manageable under continuous 1 MHz switching. In industrial SMPS designs targeting 80 PLUS Platinum or Titanium efficiency, the 2EDN7524G enables the high switching frequencies required for compact magnetics.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 2EDN7524GXTMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 2EDN7534FXTMA1 | 2EDN8534FXTMA1 | 2EDN8524RXUMA1 | 1EDN7126GXTMA1 | 1EDN7146GXTMA1 | 1EDN7550BXTSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WSON-8-1 | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same |
| Number of Channels | 2 (dual) | 2 (dual) | 2 (dual) | 2 (dual) | 1 (single) | 1 (single) | 1 (single) |
| Channel-to-Channel Delay Matching | 1 ns | <1 ns (tighter) | <1 ns (tighter) | <1 ns (tighter) | N/A (single channel) | N/A (single channel) | N/A (single channel) |
| Input Voltage Tolerance | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V |
| Optimized Target Device | MOSFET + GaN (general purpose) | MOSFET + GaN | GaN optimized | GaN optimized | MOSFET + GaN | MOSFET + GaN | MOSFET |
| Approx. Unit Price @ 1k | $0.98 | $1.10 - $1.30 | $1.40 - $1.60 | $1.30 - $1.50 | $0.90 - $1.10 | $0.90 - $1.10 | $0.85 - $1.05 |
主な差別化要因
- Dual 5 A channels in a single 8-pin WSON package with 1 ns matching （vs Single-channel drivers like 1EDN7126GXTMA1)
- Wide -10 V to +20 V logic-input voltage tolerance eliminates external protection （vs Competing low-side drivers (e.g., UCC27611))
- Explicit optimization for both silicon MOSFETs and GaN HEMTs （vs MOSFET-only drivers)
設計ノート
Place a 100 nF ceramic bypass capacitor as close as possible to the VCC pin (pin 4) and a 1 uF bulk capacitor on the same node. Use a 4-layer PCB with a continuous ground plane directly beneath the PG-WSON-8-1 exposed thermal pad to minimize switching-loop inductance. The PGND pin (pin 6) should connect to the ground plane with multiple vias to handle the 5 A peak return currents without inductive ringing.
Route the gate-drive output traces (OUT1, OUT2) directly to the driven MOSFET/GaN gate pins using the shortest possible path, and keep the gate-return path (PGND) directly underneath or adjacent to minimize loop area. The 2EDN7524G's -10 V to +20 V input tolerance allows the IN1/IN2 traces to route over the switching node in bootstrap configurations, but always keep them separated from the high-dV/dt OUT traces by at least 0.2 mm to avoid capacitive coupling.
Estimated: at 1 MHz switching with 5 A peak drive into a 30 nC gate-charge MOSFET, the 2EDN7524G dissipates approximately 0.3 W from its output-stage CV_cross losses. The PG-WSON-8-1 package with a 4-layer PCB and a copper-pour area of 1 square inch keeps the junction-to-ambient thermal resistance (theta_JA) around 50 C/W, producing a junction temperature rise of only 15 C at 0.3 W dissipation. No external heatsink is required for typical SMPS applications.
Do not exceed VCC = 20 V absolute maximum; although the logic inputs tolerate +20 V, exceeding this on VCC damages the internal bootstrap and UVLO circuits. Always tie the EN pin to VCC if unused (do not leave floating), and add a 100 kohm pull-down to GND on EN if there is any chance the controller driving it is in high-impedance during power-up. For GaN HEMTs, verify that the gate-drive voltage does not exceed the device's V_GS(max); the 2EDN7524G's rail-to-rail output may need a series gate resistor to limit overshoot.
The 1 ns channel-to-channel matching of the 2EDN7524GXTMA1 is specified at constant temperature and supply; in real circuits, mismatch can vary by 50-200 ps/C with temperature. For half-bridge applications, match the OUT1 and OUT2 trace lengths exactly and place both MOSFETs symmetrically to preserve channel matching in the PCB layout. Add a small series gate resistor (1-10 ohm) on each output to dampen ringing caused by the gate-source and gate-drain capacitances resonating with the package and trace inductances.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - industrial and consumer applications; for automotive designs, contact Infineon for the automotive-grade variant.
