HMC424ALP3ETR - 6-Bit 31.5dB GaAs Digital Attenuator | ADI
部品番号: HMC424ALP3ETR ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $26.04 | $26.04 |
| 10 | $23.2 | $232.00 |
| 100 | $19.5 | $1,950.00 |
| 500 | $16.8 | $8,400.00 |
| 1,000 | $14.2 | $14,200.00 |
| 3,000 | $12.1 | $36,300.00 |
HMC424ALP3ETR 概要
A digital step attenuator (DSA) is a variable-attenuation RF building block that adjusts signal level in discrete, calibrated increments under serial or parallel digital control. DSAs sit in the RF signal chain between the transceiver and the power amplifier (or between the LNA and the ADC) to implement automatic gain control (AGC), temperature compensation, and beam-weighting in phased arrays. At the hierarchy level, a DSA is a subset of RF attenuators, which are in turn part of the broader RF/microwave integrated circuit family used in modern wireless infrastructure.
Key features of the HMC424ALP3ETR include 6-bit parallel control, ±0.2 dB typical attenuation accuracy (chip-scale package), 0.5 dB LSB resolution, and a hermetic leadless LP3 package that is compatible with standard surface-mount assembly including lead-free reflow. The exposed pad provides a low-inductance thermal and RF ground path, supporting stable RF performance up to 13 GHz. The part is rated for operation across the -40C to +85C temperature range and is suitable for high-reliability military, industrial, and space applications.
Architecturally, the HMC424ALP3ETR integrates GaAs FET switching elements and a precision thin-film resistor ladder on a single die. Each bit is selected by a complementary CMOS-compatible logic input that steers the RF signal through the appropriate attenuation tap. Compared with PIN-diode or MEMS attenuators, the GaAs MMIC approach delivers nanosecond switching speeds, no bias-current consumption on the RF line, and excellent repeatability across temperature.
Typical applications include automatic gain control (AGC) in cellular base stations, point-to-point radio links, satellite communications, radar transceivers, test-and-measurement instrumentation, and broadband EW / phased-array beam forming. The wide DC-13 GHz bandwidth covers all sub-6 GHz 5G FR1 bands, the 2.4/5/6 GHz Wi-Fi bands, and the X-band radar band (8-12 GHz).
When designing with the HMC424ALP3ETR, observe the CMOS logic-level VIH/VIL thresholds on the six parallel bit inputs and provide adequate decoupling on the Vdd/Vee supply pins. The exposed pad must be soldered to the PCB ground pour for both RF performance and thermal dissipation. The TR suffix denotes tape-and-reel packaging for high-volume SMT assembly.
This page synthesizes distributor pricing, drop-in LP3-package alternatives, and practical RF design notes that are not contained in the manufacturer datasheet alone.
ドロップイン代替品: HMC424ALP3ETR — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
HMC424ALP3E
✅ ドロップイン📋 参考代替品（カタログ未掲載）
HMC424LP3E
✅ ドロップイン📋 参考代替品（カタログ未掲載）
HMC424LP3ETR
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
HMC540LP3E
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
HMC470LP3E
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
HMC424ALP3ETR 仕様（メーカー公開）
| 機能 | 6-bit digital step attenuator |
| Number of Bits | 6 |
| Attenuation Range | 31.5 dB (max) |
| LSB Step Size | 0.5 dB |
| Attenuation Bit Values | 0.5 / 1 / 2 / 4 / 8 / 16 dB |
| Frequency Range | DC to 13 GHz |
| Insertion Loss (typical) | < 4 dB (DC to 13 GHz) |
| Control Interface | 6-bit parallel CMOS-compatible |
| パッケージ | 16-VFQFN Exposed Pad (LP3, 3x3 mm) |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +85C |
| Process Technology | GaAs MMIC |
| Lead-Free Reflow Compatible | Yes (per datasheet) |
| Tape and Reel Packaging | Yes (TR suffix) |
HMC424ALP3ETR ピン構成
| ピン 1 | RF1 — RF input/output port 1 |
| ピン 2 | Vdd — DC bias supply |
| ピン 3 | P1 — Attenuation bit 0.5 dB (LSB), parallel CMOS |
| ピン 4 | P2 — Attenuation bit 1 dB, parallel CMOS |
| ピン 5 | P3 — Attenuation bit 2 dB, parallel CMOS |
| ピン 6 | P4 — Attenuation bit 4 dB, parallel CMOS |
| ピン 7 | P5 — Attenuation bit 8 dB, parallel CMOS |
| ピン 8 | P6 — Attenuation bit 16 dB (MSB), parallel CMOS |
| ピン 9 | GND — Ground (per datasheet pin description) |
| ピン 10 | GND — Ground (per datasheet pin description) |
| ピン 11 | GND — Ground (per datasheet pin description) |
| ピン 12 | GND — Ground (per datasheet pin description) |
| ピン 13 | RF2 — RF input/output port 2 |
| ピン 14 | GND — Ground (per datasheet pin description) |
| ピン 15 | GND — Ground (per datasheet pin description) |
| ピン 16 | GND — Ground (per datasheet pin description) |
電力・熱特性
| 動作温度 | -40C to +85C |
メーカーが公開している HMC424ALP3ETR の電力入力および熱パラメータ。
主な用途
HMC424ALP3ETR の用途: 6 件s: 5G Base Station Automatic Gain Control, Point-to-Point Microwave Backhaul Radio, X-Band Radar Receiver AGC, Phased-Array Beam-Weighting Networks, Test and Measurement Instrumentation, Satellite Communications Payloads.
5G Base Station Automatic Gain Control
The HMC424ALP3ETR fits 5G FR1 AGC because it covers 617 MHz to 6 GHz with headroom, while its 0.5 dB step resolution and +/- 0.2 dB accuracy let the transceiver maintain EVM and ACLR targets over a wide input-power dynamic range. Used in the RF chain between the transceiver and the power amplifier, the part substitutes calibrated attenuation in place of analog VGA gain control, with sub-microsecond parallel switching for fast AGC loops. Compared to analog VGAs, the digital step approach delivers predictable, temperature-stable attenuation without calibration drift.
おすすめ
Point-to-Point Microwave Backhaul Radio
Microwave backhaul links at 6 to 13 GHz require precise receive-path level control to keep the demodulator in its linear region. The HMC424ALP3ETR's DC-to-13 GHz bandwidth covers all common backhaul bands including the 6L/6U/7/8/11 GHz allocations, while 0.5 dB step granularity allows the modem to track fading in real time. Placed after the LNA and before the mixer, the attenuator compensates for rain-fade and multipath variations, holding IF power within the ADC input range. The exposed-pad LP3 footprint simplifies integration on the small backhaul-radio PCBs.
おすすめ
X-Band Radar Receiver AGC
X-band radar receivers (8 to 12 GHz) demand fast, precise attenuation to manage near-range target saturation. The HMC424ALP3ETR's 0.5 dB step and parallel CMOS interface allow nanosecond-scale attenuation changes between successive range bins, essential for time-varying gain control in pulsed radar. The GaAs MMIC process delivers high IP3 (>50 dBm typical per ADI datasheet) so the attenuator does not degrade receiver noise figure. Used between the LNA and the downconverter, the part provides up to 31.5 dB of dynamic-range extension.
おすすめ
Phased-Array Beam-Weighting Networks
In active electronically steered arrays, per-element amplitude weighting shapes the antenna pattern sidelobes and beam shape. The HMC424ALP3ETR is a natural fit because its 0.5 dB resolution and 31.5 dB range allow 6-bit amplitude control across thousands of elements, while the LP3 package supports compact tile layouts. Each attenuator is paired with a 6-bit digital phase shifter (e.g., HMC642) to provide full vector modulation at each array element. Parallel CMOS control simplifies integration with FPGA-based beam-steering controllers.
おすすめ
Test and Measurement Instrumentation
Test equipment such as spectrum analyzers, signal generators, and ATE RF signal paths require accurate, repeatable attenuation to set stimulus levels or protect sensitive detectors. The HMC424ALP3ETR offers +/- 0.2 dB typical accuracy per the ADI datasheet, which is sufficient for production-test tolerance, and its DC-to-13 GHz bandwidth covers most wireless and many microwave test scenarios. Used as a programmable step attenuator in a switched attenuator chain, the part provides 31.5 dB of programmable range in a single low-profile LP3 component.
おすすめ
Satellite Communications Payloads
Satcom ground terminals and on-board IF processors need temperature-stable, broadband attenuation to compensate for uplink-power variations and channel fades. The HMC424ALP3ETR is hermetic-package-compatible (HMC424LP3E/TR variant) and operates over -40C to +85C, supporting outdoor and LEO-ground-station environments. At 0.5 dB granularity it delivers the dynamic range needed to maintain constant IF drive into the demodulator, while the parallel interface simplifies interface to radiation-tolerant FPGAs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: HMC424ALP3ETR — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | HMC424ALP3E | HMC424LP3E | HMC424LP3ETR | HMC540LP3E | HMC470LP3E |
|---|---|---|---|---|---|---|
| Package | 16-VFQFN Exposed Pad (LP3) | 16-VFQFN Exposed Pad (LP3) - same | 16-VFQFN Exposed Pad (LP3) - same | 16-VFQFN Exposed Pad (LP3) - same | 16-VFQFN Exposed Pad (LP3) - same | 16-VFQFN Exposed Pad (LP3) - same |
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Number of Bits | 6 | 6 | 6 | 6 | 6 | 5 |
| Attenuation Range | 31.5 dB | 31.5 dB | 31.5 dB | 31.5 dB | 15.5 dB | 31 dB |
| LSB Step Size | 0.5 dB | 0.5 dB | 0.5 dB | 0.5 dB | 0.5 dB | 1 dB |
| Frequency Range | DC to 13 GHz | DC to 13 GHz | DC to 13 GHz | DC to 13 GHz | DC to 5 GHz | DC to 3 GHz |
| Package Type | Leadless (non-hermetic) | Leadless (non-hermetic) | Hermetic glass/metal | Hermetic glass/metal, TR | Leadless (non-hermetic) | Leadless (non-hermetic) |
| Insertion Loss (typical) | < 4 dB | < 4 dB | < 4 dB | < 4 dB | < 2 dB (lower BW) | < 1.5 dB (lower BW) |
| Operating Temperature | -40C to +85C | -40C to +85C | -55C to +125C (MIL screening) | -55C to +125C (MIL screening) | -40C to +85C | -40C to +85C |
主な差別化要因
- Highest bandwidth in 6-bit 0.5 dB-step LP3 family （vs HMC540LP3E)
- Finer 0.5 dB LSB resolution vs 1 dB LSB （vs HMC470LP3E)
- Industrial/commercial leadless LP3 packaging at lower cost （vs HMC424LP3ETR (hermetic variant))
- Broader attenuation range vs 5-bit parts （vs HMC470LP3E (5-bit))
設計ノート
The exposed pad on the LP3 package is the primary RF and thermal ground path. Solder it directly to a continuous PCB ground pour with at least 8 thermal vias (0.3 mm drill, 0.5 mm pitch) connecting top-side pad to inner ground layers. Inadequate grounding will degrade insertion loss, attenuator accuracy, and intermodulation performance at higher frequencies, especially above 6 GHz.
Route the six parallel CMOS control bits as 50 ohm matched traces when they extend more than 5 mm, and keep them physically separated from the RF traces by an unbroken ground wall. Place 100 nF decoupling capacitors on each Vdd pin as close as physically possible to the package. Maintain a 50 ohm microstrip or coplanar-waveguide (CPW) launch from the RF1 and RF2 pins to the PCB edge connectors, with reference to the package ground pad to within 1 mm of the package edge.
Estimated: assuming a 50 ohm source and load, switching the HMC424ALP3ETR between any two attenuation states will produce a transient spike whose amplitude depends on the input power and the bit transition. For high-Power AGC loops (>+20 dBm RF input), allow at least 100 ns settling time before sampling the downstream detector to avoid false readings. Apply CMOS logic levels of 0 / 1.8 V to 5 V per datasheet and avoid floating inputs to prevent shoot-through current in the GaAs FET switches.
Common design mistakes include (1) omitting the exposed-pad solder connection, which causes degraded RF performance and overheating; (2) leaving unused parallel CMOS inputs floating, which increases supply current and may cause unwanted attenuation states; (3) using insufficient RF trace ground reference at 13 GHz, where field fringing increases losses; and (4) exceeding the maximum RF input power (refer to the datasheet absolute maximum ratings - typically +25 dBm CW for the HMC424 family).
コンプライアンス情報
Lead-free reflow compatible per Analog Devices datasheet. RoHS/REACH/AEC-Q100 status not stated in the verified web data and marked unknown; for automotive applications consult Analog Devices for AEC-Q100 qualified alternatives.
