IAUC41N06S5L - 60V 10mΩ OptiMOS-5 N-Channel MOSFET | Infineon
部品番号: IAUC41N06S5L ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 3,000 | $0.78 | $2,340.00 |
IAUC41N06S5L 概要
An N-channel power MOSFET is a voltage-driven majority-carrier device that controls conduction between drain and source via an electric field at the gate-insulator interface. MOSFETs sit in the broader discrete-semiconductor hierarchy alongside BJTs and IGBTs and are favored for switching power conversion because of high switching speed, no body-diode reverse-recovery charge (in many modern trench designs), and zero static gate current. The OptiMOS-5 process from Infineon represents a fifth-generation trench-FET architecture tuned for low R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit, which directly translates to lower conduction and switching losses.
Key features include 60 V drain-source breakdown voltage, 10 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, logic-level drive (V<sub>GS(th)</sub> around 1.7 V typical), 175 °C maximum operating junction temperature, MSL1 moisture sensitivity up to 260 °C peak reflow, and RoHS-compliant lead-free construction. The AEC-Q101 automotive qualification makes it suitable for under-hood and chassis electronics where long-term reliability is mandatory.
The TDSON-8 footprint provides a top-side cooling path via PCB copper area attached to the exposed tab. Compared to internal PowerPAK or DPAK 0802-style packages, TDSON-8 is nearly three-halves the height and slot efficiency, making it suitable for high-density LED driver boards and space-constrained powertrain modules. The logic-level gate drive eliminates external gate-driver ICs, simplifying BOM.
Typical applications include automotive LED headlight and DRL drivers, matrix-beam LED modules, infotainment power switching, ADAS sensor power rails, and 12 V/24 V automotive load switching. The low R<sub>DS(on)</sub> minimizes conduction losses in high-current LED strings, while the logic-level gate drive allows direct MCU control without level shifting.
When designing with this device, ensure adequate V<sub>GS</sub> headroom under cold-crank conditions where battery voltage can drop below 6 V. The exposed pad must be soldered to a sufficient copper pour to keep junction temperature within SOA under sustained load. Gate-source protection with a 10 kΩ pull-down and TVS clamping at the gate is recommended for harsh automotive transients.
ドロップイン代替品: IAUC41N06S5L — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IAUC41N06S5L （同一形状・フットプリント） — 相違点: Package, RoHS Status, Automotive Qualification, Channel Type, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
IAUC41N06S5L100ATMA1
✅ ドロップイン✓ 在庫あり
$0.43 / 個
データシートを見る →IAUC41N06S5L100ATMA1
✅ ドロップイン✓ 在庫あり
$0.43 / 個
データシートを見る →IAUC41N06S5N102ATMA1
✅ ドロップイン✓ 在庫あり
$0.58 / 個
データシートを見る →IAUC41N06S5L 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Number | IAUC41N06S5L |
| Technology | OptiMOS-5 trench MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 10 mΩ typical |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | Logic-level (around 1.7 V typical) |
| Maximum Operating Junction Temperature | 175 °C |
| パッケージ | TDSON-8 (PG-TDSON-8) |
| 実装タイプ | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Channel Type | N-channel, Enhancement mode |
| RoHS ステータス | Compliant (Green Product) |
| Lead-Free | Yes |
IAUC41N06S5L ピン構成
| ピン 1 | GATE — Gate control input (logic-level) |
| ピン 2 | SOURCE — Source connection |
| ピン 3 | SOURCE — Source connection |
| ピン 4 | SOURCE — Source connection (tied to pin 2) |
| ピン 5 | DRAIN — Drain connection (main power terminal) |
| ピン 6 | DRAIN — Drain connection (tied to pin 5) |
| ピン 7 | DRAIN — Drain connection (tied to pin 5) |
| ピン 8 | DRAIN — Drain connection (tied to pin 5); also exposed pad |
安全動作領域 (DC, T_C = 25 °C)
主な用途
IAUC41N06S5L の用途: 7 件s: Automotive LED Headlight Driver, Daytime Running Light (DRL) Switching, Automotive Infotainment Power Switching, ADAS Sensor Power Rails, Body Control Module Load Switching, USB Charging Port Power Switch, Electric Power Steering (EPS) Auxiliary.
Automotive LED Headlight Driver
The IAUC41N06S5L is well-suited as the high-side or low-side switch in automotive LED headlight and matrix-beam driver circuits. Its 10 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V minimizes conduction losses when switching multi-amp LED strings, while the logic-level gate threshold enables direct PWM control from a 3.3 V or 5 V LED driver MCU without an intermediate gate-driver stage. The 60 V V<sub>DS</sub> rating provides robust headroom for 12 V/24 V automotive bus transients including load-dump, and AEC-Q101 qualification ensures long-term reliability under hood temperature swings up to 175 °C. Place the exposed TDSON-8 pad on at least 1 square inch of copper to keep R<sub>θJA</sub> below 50 °C/W for sustained LED current.
おすすめ
Daytime Running Light (DRL) Switching
For daytime running light modules, the IAUC41N06S5L serves as a high-current PWM switch that handles the LED string current with minimal thermal rise. At 1 A continuous LED current and R<sub>DS(on)</sub> of 10 mΩ, conduction loss is only ~10 mW, allowing fanless operation in sealed lamp housings. Logic-level gate drive eliminates the need for a bootstrap gate driver, reducing PCB area and BOM cost. The TDSON-8 footprint fits standard DRL driver board layouts. AEC-Q101 qualification and MSL1 reflow rating support automated automotive SMT assembly lines.
おすすめ
Automotive Infotainment Power Switching
In infotainment head units and rear-seat entertainment modules, the IAUC41N06S5L functions as a load switch or reverse-battery protection MOSFET on the 12 V rail. Its 60 V V<sub>DS</sub> rating tolerates jump-start and load-dump transients per ISO 7637-2, and the logic-level drive allows direct control from the main SoC GPIO without driver complexity. The 10 mΩ R<sub>DS(on)</sub> keeps voltage drop below 100 mV at 10 A load, preserving headroom for downstream regulators. AEC-Q101 qualification supports automotive cabin-environment reliability requirements.
おすすめ
ADAS Sensor Power Rails
ADAS camera, radar, and LiDAR modules require low-noise, reliable power switching - the IAUC41N06S5L fits as a hot-swap or redundant-rail switch. Its low R<sub>DS(on)</sub> minimizes self-heating during sensor warm-up surges, while the logic-level gate drive allows the ASIL-rated safety MCU to control power gates directly. The AEC-Q101 qualification and 175 °C max junction temperature ensure operation in windshield-mounted or front-bumper locations with wide thermal swings. Place TVS diodes on drain for automotive transient protection per OEM EMC requirements.
おすすめ
Body Control Module Load Switching
Body control modules (BCMs) use the IAUC41N06S5L to switch resistive and inductive loads such as door lock motors, mirror heaters, and seat adjustment actuators. The 60 V V<sub>DS</sub> rating handles flyback voltage from inductive kick when de-energizing solenoids, and the logic-level drive simplifies the BCM's discrete-FET output stages. AEC-Q101 qualification supports long-term reliability in distributed body electronics across the vehicle. Use the exposed pad for adequate heatsinking when driving continuous loads above 5 A.
おすすめ
USB Charging Port Power Switch
For automotive USB charging ports (Type-A and Type-C), the IAUC41N06S5L serves as the high-side protection switch that disconnects the 5 V rail during overcurrent or short-circuit events. Its 10 mΩ R<sub>DS(on)</sub> minimizes voltage drop at 3 A charging current, preserving USB spec voltage tolerance. The logic-level gate drive integrates directly with USB Type-C port controller GPIOs, eliminating external gate drivers. AEC-Q101 qualification meets automotive cabin environmental requirements including temperature cycling and vibration.
おすすめ
Electric Power Steering (EPS) Auxiliary
In EPS systems, the IAUC41N06S5L can be used in auxiliary power management subcircuits such as sensor rail switching and redundant supply paths. Its low R<sub>DS(on)</sub> reduces I²R heating on continuously-on rails, and the wide 60 V V<sub>DS</sub> rating protects against motor back-EMF transients on shared bus structures. AEC-Q101 qualification and 175 °C junction rating support underhood deployment. Logic-level drive enables direct control from the EPS safety MCU's GPIO without intermediate driver complexity.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IAUC41N06S5L — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IAUC41N06S5L100ATMA1 | IAUC41N06S5L100 | IAUC41N06S5N |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TDSON-8 | TDSON-8 - same | TDSON-8 - same | TDSON-8 - same |
| Drain-Source Voltage (V_DS) | 60 V | 60 V | 60 V | 60 V |
| R_DS(on) at V_GS=10 V | 10 mΩ typical | 10 mΩ | 10 mΩ | 10 mΩ |
| Gate Drive Level | Logic-level (4.5 V) | Logic-level (4.5 V) | Logic-level (4.5 V) | Standard (10 V) - different |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Max Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C |
| MSL Level | MSL1 | MSL1 | MSL1 | MSL1 |
| Technology | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 |
主な差別化要因
- Logic-level gate drive eliminates external gate-driver IC （vs Standard 10 V MOSFETs in the same R<sub>DS(on)</sub> class)
- OptiMOS-5 process gives best-in-class FOM （vs Older OptiMOS-3 / OptiMOS-4 generations)
- AEC-Q101 automotive qualification with 175 °C max junction （vs Commercial-grade 150 °C-junction MOSFETs)
設計ノート
The TDSON-8 exposed drain pad is the primary thermal path. At 10 mΩ R<sub>DS(on)</sub> and 10 A continuous load, conduction loss is ~1 W, raising junction temperature by approximately 50 °C above ambient on a 1 square inch copper pour (R<sub>θJA</sub> ≈ 50 °C/W). For higher continuous currents, increase PCB copper area or use multiple thermal vias under the exposed pad to drop R<sub>θJA</sub> below 40 °C/W. Always check the SOA curve at your worst-case V<sub>DS</sub> and I<sub>D</sub> combination.
Cold-crank events drop the automotive battery to as low as 4.5 V briefly - this can fall below the logic-level V<sub>GS(th)</sub> margin of the IAUC41N06S5L if the gate is driven directly from a 5 V rail that sags with battery. Ensure your gate-drive regulator maintains ≥4.5 V at the gate during cold-crank, or hold the gate high with a hold-up circuit during transients. Do not exceed V<sub>GS</sub> max absolute rating during load-dump transients on the gate line.
Place a 10 kΩ pull-down resistor from gate to source on the PCB to ensure the MOSFET stays off during MCU reset or power-up sequencing. Keep the gate-trace short (under 10 mm) and route it away from switching-node copper to minimize parasitic inductance. Place a TVS diode (e.g., SMAJ33CA) from gate to source for transient protection per automotive EMC requirements. Use a 100 nF ceramic bypass capacitor close to the gate-driver output for high-frequency decoupling.
コンプライアンス情報
RoHS compliant (Green Product per Infineon datasheet). AEC-Q101 qualified for automotive applications. Halogen-free status not explicitly stated in available data - set to unknown. MSL1 rating supports lead-free reflow up to 260 °C peak per JEDEC J-STD-020.
