IRFR4620TRLPBF - 200V 24A N-Ch MOSFET, 78mOhm, DPAK | Infineon
部品番号: IRFR4620TRLPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.72 | $2.72 |
| 10 | $2.45 | $24.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.72 | $1,720.00 |
IRFR4620TRLPBF 概要
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for power conversion, motor control, and load management. Within the semiconductor taxonomy, MOSFETs are a subset of discrete transistors, which sit under power semiconductors and ultimately under discrete semiconductors. The DPAK (TO-252) package is a surface-mount variant of the TO-220 through-hole package, optimized for high-current applications where PCB thermal copper area replaces a discrete heatsink.
Key features include a 200 V VDS rating that supports 120/230 VAC rectified offline applications, an RDS(on) of 78 mOhm at 10 V VGS for low conduction losses, and a continuous drain current of 24 A at case temperature. The device is also rated for 144 W power dissipation at Tc. The TO-252AA (DPAK) package offers a low thermal resistance path through the drain tab to PCB copper, enabling compact designs.
The IRFR4620TRLPBF uses Infineon's IR MOSFET technology with a planar cell structure optimized for low on-resistance per unit area. The 200 V rating with 78 mOhm RDS(on) places this part in the sweet spot for medium-power offline converters, where avalanche ruggedness and switching losses must be balanced against conduction efficiency. The gate charge of 25 nC allows moderate-frequency operation in the 50-200 kHz range commonly used in SMPS topologies.
Typical applications include DC-DC converters in telecom and server power supplies, motor drive circuits in industrial automation, battery management systems, and load switches in power distribution. The 200 V rating also supports PFC boost stages and synchronous rectification in offline SMPS designs.
When designing with this device, ensure adequate PCB copper area for thermal dissipation. The DPAK package relies on the drain tab as the primary thermal path - a minimum of 1 square inch of 2 oz copper is recommended for full 24 A operation. Use a gate resistor of 10-100 Ohm to control switching transients.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
ドロップイン代替品: IRFR4620TRLPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRFR4620TRLPBF （同一形状・フットプリント） — 相違点: Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level, Package.
クイック比較ツール — 並列比較する代替部品を選択:
IRFR4620TRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR4620PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
AUIRFR4620TRL
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR2405TRLPBF
✅ ドロップイン✓ 在庫あり
$0.55 / 個
データシートを見る →IRFR9120NTRLPBF
✅ ドロップイン✓ 在庫あり
$0.61 / 個
データシートを見る →VBE1206N
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR4620TRLPBF 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Number | IRFR4620TRLPBF |
| トランジスタタイプ | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 24 A at Tc |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V |
| Gate Charge (Qg) | 25 nC typical |
| Power Dissipation (PD) | 144 W at Tc |
| Technology | IR MOSFET |
| パッケージ / ケース | TO-252AA (DPAK) |
| 実装タイプ | Surface Mount |
| 動作温度 | -55C to +175C |
| Lead Free | Yes |
| RoHS ステータス | Compliant |
| MSLレベル | 1 (Unlimited) |
IRFR4620TRLPBF ピン構成
| ピン 1 | Gate — Gate control input (VGS drive) |
| ピン 2 | Drain — Drain connection (also tied to package tab for thermal) |
| ピン 3 | Source — Source connection |
安全動作領域 (SOA) - DC
主な用途
IRFR4620TRLPBF の用途: 6 件s: Offline PFC Boost Converter, Primary-Side Flyback Switch, DC Motor Drive / H-Bridge, Battery Management / Load Switch, Synchronous Rectifier (Low-Side), Solar Inverter / MPPT Switch.
Offline PFC Boost Converter
The IRFR4620TRLPBF fits offline PFC boost stages because its 200 V VDS rating provides sufficient headroom for 120 VAC rectified (170 V peak) and 230 VAC rectified (325 V peak with derating) line inputs. The 78 mOhm RDS(on) at VGS=10V keeps conduction losses low in continuous conduction mode operation. Its 25 nC gate charge supports switching frequencies in the 50-100 kHz PFC range, balancing efficiency and magnetics size. Compared to using a 600 V MOSFET, the 200 V rating allows a smaller die and lower RDS(on), reducing both conduction and switching losses.
おすすめ
Primary-Side Flyback Switch
The IRFR4620TRLPBF serves as the primary-side MOSFET in isolated flyback converters for industrial and consumer SMPS. The 200 V VDS comfortably exceeds the maximum reflected voltage from a 24 V output flyback running off universal mains input. The 24 A continuous current rating supports power levels up to approximately 150 W depending on thermal design. The DPAK package's drain tab enables direct PCB copper heatsinking without external thermal management.
おすすめ
DC Motor Drive / H-Bridge
The IRFR4620TRLPBF can be configured as a half-bridge or full-bridge switch for DC motor speed control in industrial automation. The 200 V VDS rating supports 48 V and 96 V DC bus systems, while the 78 mOhm RDS(on) keeps I2R losses low during PWM operation. The 24 A rating enables control of motors up to approximately 1 kW without paralleling devices. The TO-252AA (DPAK) package is well suited for compact motor driver boards where the drain tab is soldered directly to a copper heatsink area on the PCB.
おすすめ
Battery Management / Load Switch
The IRFR4620TRLPBF functions as a high-side or low-side load switch in 48 V battery management systems for telecom and energy storage. The 200 V VDS provides ample margin above the maximum 48 V battery stack voltage plus transients. The 78 mOhm RDS(on) at 24 A continuous supports high-current disconnect applications. The TO-252 package with exposed drain tab enables reliable thermal performance in space-constrained BMS boards.
おすすめ
Synchronous Rectifier (Low-Side)
The IRFR4620TRLPBF can serve as a synchronous rectifier on the low-side of buck or forward converters where 200 V is sufficient margin. The 78 mOhm RDS(on) is competitive with Schottky diode forward drops at high currents, improving efficiency. The 25 nC gate charge keeps dead-time and body-diode conduction losses low in 100-200 kHz converters. Its DPAK footprint allows it to be paralleled with companion parts for higher current applications.
おすすめ
Solar Inverter / MPPT Switch
The IRFR4620TRLPBF works as the switching element in solar MPPT (Maximum Power Point Tracking) converters for residential and small commercial inverters. The 200 V VDS rating handles open-circuit voltages from typical 60-cell or 72-cell PV panel strings. The 24 A continuous current supports power levels up to approximately 3 kW per MPPT channel. The TO-252AA (DPAK) package is widely accepted in outdoor power electronics for its robustness and through-the-tab thermal dissipation.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRFR4620TRLPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRFR4620TRPBF | IRFR4620PBF | AUIRFR4620TRL | VBE1206N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252 (DPAK) |
| VDS Rating | 200 V | 200 V | 200 V | 200 V | 200 V |
| RDS(on) max @10V | 78 mOhm | 78 mOhm | 78 mOhm | 78 mOhm | 55 mOhm |
主な差別化要因
- AEC-Q101 automotive qualification option in same package （vs AUIRFR4620TRL)
- Lower RDS(on) than original in same package （vs VBE1206N)
- Strict drop-in pin-compatibility across multiple reel codes （vs IRFR4620TRPBF / IRFR4620PBF)
設計ノート
Estimated: at 24 A continuous with RDS(on) of 78 mOhm, conduction losses are approximately P = I^2 * R = 24^2 * 0.078 = 44.9 W. The DPAK package relies on the drain tab as the primary thermal path. The Infineon datasheet specifies RthJC below 1 C/W and RthJA of 50 C/W on 1 sq inch of 2 oz copper. For continuous 24 A operation, a minimum of 1.5 sq inches of 2 oz copper on the drain tab is recommended, or use an external heatsink clipped to the tab. Without adequate heatsinking, the part will thermally limit at significantly lower currents.
Place the gate drive components within 25 mm of the gate pin to minimize gate-loop inductance. Use a 10 Ohm gate resistor for switching speeds up to 200 kHz; reduce to 4.7 Ohm for faster edges if EMI is acceptable. Keep the source return path direct and wide - the source current path shares the gate drive return, and any inductance in this path causes gate-source voltage spikes that can exceed VGS rating. Add a 100 nF ceramic bypass capacitor between VCC and ground as close as possible to the gate driver supply pin.
Do not exceed the maximum VGS rating of +/-20 V, which is commonly violated during switching transients on long gate-drive traces. Add a 10 kOhm resistor from gate to source to ensure the MOSFET stays off if the gate driver loses power. The body diode of the IRFR4620 has limited reverse recovery characteristics - for hard-switched bridge topologies, consider an external Schottky or a MOSFET with better body diode performance. Do not parallel this part without adequate thermal balancing or matching per the datasheet.
コンプライアンス情報
RoHS compliant and lead-free per Infineon product page. Standard variant is not AEC-Q100 qualified; choose AUIRFR4620TRL for AEC-Q101 automotive applications.
