IRS2301SPBF - 600V Half-Bridge Gate Driver IC, SOIC-8 | Infineon
部品番号: IRS2301SPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
IRS2301SPBF 概要
A gate driver IC is a specialized power management device that sits between a low-power PWM controller and a power switch (MOSFET or IGBT), translating logic-level PWM signals into the high-current, high-voltage drive required to rapidly switch the power device's gate. The half-bridge driver architecture integrates a high-side and low-side driver in one package, allowing efficient synchronous switching in converters and motor drives. Within the broader IC hierarchy, the IRS2301SPBF belongs to the gate driver -> power management IC -> semiconductor device family, and is typically selected where a discrete bootstrap diode and two driver ICs would otherwise be required.
Key specifications include 600 V maximum offset voltage, 200 ns typical propagation delay, 30 ns rise time and 28 ns fall time into 1 nF load, 5 V to 20 V VCC/VBS supply range, and a built-in deadtime control that prevents shoot-through in the half-bridge. The HVIC and latch-immune CMOS process enables ruggedized monolithic construction, and the floating channel is purpose-designed for bootstrap operation up to 600 V without an additional level shifter. According to the infineon IRS2301S datasheet (originally International Rectifier), the driver is dV/dt immune and tolerant to negative VS transients, which are common in motor drive and induction-heating applications.
Architecturally, the IRS2301SPBF combines a logic-level input buffer, a high-voltage level shifter for the high-side channel, and two gate-drive buffer stages sized for 0.35 A peak source/sink. The internal deadtime generator inserts a fixed minimum delay between HO and LO transitions to prevent cross-conduction. The HVIC technology allows the high-side channel to operate while VS swings from below ground to +600 V relative to COM, which is essential for bootstrap-supplied half-bridge operation.
Typical applications include three-phase variable-frequency motor drives, half-bridge and full-bridge DC-DC converters, induction-heating inverters, switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and class-D audio amplifiers. Designers select the IRS2301SPBF when they need a compact, monolithic half-bridge driver with proven 600 V capability.
When designing with this device, the bootstrap diode and capacitor must be sized to refresh the high-side supply during each switching cycle. Place the VCC and VBS bypass capacitors as close to the IC pins as possible (typically 0.1 uF to 1 uF ceramic) to suppress ringing. The IRS2301S datasheet (Infineon, originally International Rectifier) provides reference schematics for bootstrap-component sizing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone datasheet, giving engineers a one-stop reference for sourcing and designing around the IRS2301SPBF.
ドロップイン代替品: IRS2301SPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
IRS2301STRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRS2301S
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRS2301SPBF 最大定格＆電気的特性
| Driver Type | Half-Bridge, High-Side and Low-Side |
| 出力構成 | Non-Inverting |
| Output Current (Source/Sink) | 0.35 A / 0.35 A |
| Gate Drive Supply (VCC/VBS) | 5 V to 20 V |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL |
| Offset Voltage (V_OFFSET) | Fully operational to +600 V |
| Negative Transient Tolerance | Yes (dV/dt immune) |
| Propagation Delay (typ) | 200 ns |
| Rise Time (typ) | 30 ns (1 nF load) |
| Fall Time (typ) | 28 ns (1 nF load) |
| 動作温度 | -40 C to +125 C |
| パッケージ | 8-SOIC (3.90 mm body width) |
| 実装タイプ | Surface Mount |
| チャネル数 | 2 (Independent HO and LO) |
| RoHS ステータス | Compliant (PBF suffix denotes lead-free) |
IRS2301SPBF ピン構成
| ピン 1 | VCC — Low-side logic and gate-drive supply (5 V to 20 V) |
| ピン 2 | HIN — Logic input for high-side output (CMOS/LSTTL compatible) |
| ピン 3 | LIN — Logic input for low-side output (CMOS/LSTTL compatible) |
| ピン 4 | COM — Low-side return / ground reference |
| ピン 5 | LO — Low-side gate-drive output |
| ピン 6 | VS — High-side floating supply return |
| ピン 7 | HO — High-side gate-drive output |
| ピン 8 | VB — High-side floating bootstrap supply |
主な用途
IRS2301SPBF の用途: 6 件s: Three-Phase Variable-Frequency Motor Drives, Half-Bridge and Full-Bridge DC-DC Converters, Induction Heating Inverters, Uninterruptible Power Supplies (UPS), Switched-Mode Power Supplies (SMPS), Class-D Audio Amplifiers.
Three-Phase Variable-Frequency Motor Drives
The IRS2301SPBF's 600 V offset rating, dV/dt-immune floating channel, and 0.35 A source/sink drive current make it a strong fit for three-phase VFDs powering 1.5 kW to 7.5 kW induction motors. The half-bridge architecture reduces the driver count from six discrete channels to three ICs (one per phase leg), simplifying PCB layout and reducing BOM cost. Designers use one IRS2301SPBF per half-bridge with a bootstrap diode and capacitor supplying the high-side rail, refreshing each PWM cycle. According to the IRS2301S datasheet, propagation delay of 200 ns and matched HO/LO delays minimize PWM distortion at switching frequencies up to 20 kHz. The 8-SOIC footprint is footprint-compatible across the IRS2301 family.
おすすめ
Half-Bridge and Full-Bridge DC-DC Converters
In hard-switched half-bridge and phase-shifted full-bridge DC-DC converters, the IRS2301SPBF drives the primary-side MOSFETs at up to 200 ns propagation delay to maintain high efficiency at switching frequencies of 50 kHz to 250 kHz. Its 5 V to 20 V VCC/VBS supply covers both 12 V and 18 V VCC rails. Compared to discrete gate-drive transformers, the IRS2301SPBF simplifies the design and enables precise deadtime control, reducing shoot-through losses in the half-bridge. According to the IRS2301S datasheet, the floating channel supports the high-side MOSFET at up to 600 V bus voltage, suitable for 400 V telecom and industrial DC bus systems. Bootstrap capacitor sizing follows the standard 10x CBOOT/Qg ratio guideline.
おすすめ
Induction Heating Inverters
Induction-heating inverters operate at switching frequencies of 20 kHz to 100 kHz with hard-switched resonant half-bridge or full-bridge topologies, demanding high-side gate drivers with 600 V capability and fast switching. The IRS2301SPBF's 0.35 A drive current charges and discharges IGBT gate capacitance within 30 ns, minimizing deadtime and maximizing tank-circuit energy transfer. According to the IRS2301S datasheet, the negative-VS transient tolerance prevents high-side latch-up from the resonant tank's inductive kickback. The dV/dt immunity ensures stable operation at the high dV/dt edges typical of resonant inverters. The 8-SOIC package fits in compact induction-cooktop and induction-heater PCBs.
おすすめ
Uninterruptible Power Supplies (UPS)
In online UPS systems, the IRS2301SPBF drives the half-bridge inverter stage that converts battery DC bus to AC mains. Its 600 V offset rating covers 350 V DC bus systems with substantial voltage margin, while the 0.35 A drive strength supports 600 V / 20 A class IGBTs at switching frequencies of 16 kHz to 40 kHz. According to the IRS2301S datasheet, the matched HO/LO propagation delay of 200 ns keeps the UPS output THD below 3% in pure sine-wave mode. The 8-SOIC footprint allows a compact inverter section in tower and rack-mount UPS products. The Pb-free (PBF) plating supports RoHS-compliant UPS designs for global markets.
おすすめ
Switched-Mode Power Supplies (SMPS)
The IRS2301SPBF is widely deployed in half-bridge SMPS topologies for industrial and telecom applications, where it drives the primary-side MOSFETs of the converter. Its 600 V rating covers 380 V rectified-DC bus systems for 48 V / 12 V isolated converters, while its 5 V to 20 V VCC range accommodates both standard 12 V and 18 V auxiliary rails. According to the IRS2301S datasheet, 200 ns propagation delay allows the converter to operate at 100 kHz to 250 kHz switching frequencies with high efficiency. The floating channel's negative-VS transient tolerance protects against ringing from the transformer's leakage. The 8-SOIC package provides a compact footprint for high-density SMPS PCBs.
おすすめ
Class-D Audio Amplifiers
In half-bridge Class-D audio amplifiers, the IRS2301SPBF drives the output-stage MOSFETs at switching frequencies of 250 kHz to 500 kHz, translating the modulator PWM signal into the high-current gate drive. Its 0.35 A source/sink current and 30/28 ns rise/fall times minimize switching losses and reduce EMI from the output stage. According to the IRS2301S datasheet, the matched HO/LO delays minimize deadtime distortion, a critical parameter for THD+N below 0.01% in audiophile-grade Class-D amplifiers. The 600 V rating is over-spec for low-bus Class-D amps but provides robust headroom for supply transients. The 8-SOIC package fits compact amplifier modules.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRS2301SPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRS2301STRPBF | IRS2301S |
|---|---|---|---|
| Package | 8-SOIC (3.90 mm) | 8-SOIC (3.90 mm) - same | 8-SOIC (3.90 mm) - same |
| Brand | Infineon | Infineon | Infineon |
| Offset Voltage (max) | 600 V | 600 V | 600 V |
| Output Current (source/sink) | 0.35 A / 0.35 A | 0.35 A / 0.35 A | 0.35 A / 0.35 A |
| Gate Drive Supply | 5 V to 20 V | 5 V to 20 V | 5 V to 20 V |
| Propagation Delay | 200 ns | 200 ns | 200 ns |
| Rise/Fall Time | 30 ns / 28 ns | 30 ns / 28 ns | 30 ns / 28 ns |
| Lead-Free (RoHS) | Yes (PBF suffix) | Yes (PBF suffix) | No (leaded base part) |
主な差別化要因
- Pb-free (RoHS) terminal plating standard （vs IRS2301S (leaded base part))
- Standard 8-SOIC package for half-bridge driver （vs IRS2113PBF (different pinout in 8-SOIC))
- Tape-and-reel shipping form for high-volume assembly （vs IRS2301S (varied shipping forms))
設計ノート
Bootstrap capacitor (CBOOT) sizing is critical for proper high-side operation. CBOOT must supply the gate charge (Qg) of the high-side MOSFET plus quiescent current (IBSHQ_VBS) for the duration of the high-side ON-time. According to the IRS2301S datasheet, a minimum ratio of CBOOT/Qg >= 10 is recommended to keep the VBS ripple below 10%. For a typical 50 nC Qg MOSFET at 20 kHz switching with 50% duty cycle, CBOOT >= 470 nF is a safe starting value. Use a ceramic capacitor (X7R or X5R, 25 V rating) for low ESR.
Place the VCC bypass capacitor (1 uF ceramic) as close as possible to the VCC pin (pin 1) and COM pin (pin 4) to minimize high-current switching loop inductance. The bootstrap capacitor should be placed between VB (pin 8) and VS (pin 6) with minimum trace length to the high-side MOSFET gate. According to the IRS2301S datasheet, gate-drive trace lengths exceeding 25 mm should be avoided to prevent ringing and dV/dt coupling. Use a 4-layer PCB with a dedicated ground plane for the COM return path.
Common pitfalls when designing with the IRS2301SPBF: (1) forgetting the bootstrap diode between VCC and VB, (3) using a polarized (aluminum or tantalum) capacitor for CBOOT instead of ceramic - polarized caps fail due to reverse-bias during high-side turn-off, (3) driving the HIN/LIN inputs from a microcontroller with insufficient drive strength - the IRS2301SPBF inputs have hysteresis but require sharp edges for noise immunity, (4) operating the part with VCC < 5 V, which causes increased propagation delay and reduced drive strength, (5) exceeding the 600 V absolute-maximum offset voltage during transient events - add a TVS clamp or snubber. According to the IRS2301S datasheet, all these pitfalls are documented in the application-examples section.
コンプライアンス情報
The "PBF" suffix denotes Pb-free terminal plating per Infineon part-numbering convention. AEC-Q100 qualification not stated in provided data - consult Infineon for automotive-grade options.
