MBR0540T1G - 40V 500mA Schottky Diode | onsemi
部品番号: MBR0540T1G ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MBR0540T1G 概要
A Schottky diode is a semiconductor rectifier that uses a Schottky barrier rather than a conventional p-n junction. This construction provides a lower forward-voltage drop than many silicon rectifiers while supporting high switching frequencies. In the power hierarchy, the MBR0540T1G belongs to the Schottky rectifier and discrete-semiconductor categories, where it serves as a compact polarity-protection or rectification element.
The main verified ratings are 40 V repetitive reverse voltage, 500 mA forward current, and a maximum forward voltage of 510 mV. Its single-diode configuration and surface-mount construction suit compact power-management, control, and signal-conditioning boards. The onsemi datasheet identifies the device for low-voltage high-frequency rectification, freewheeling, and polarity-protection applications.
The Schottky barrier mechanism reduces the forward drop while increasing reverse leakage relative to a conventional silicon diode. Designers should therefore account for leakage when the diode is used in precision analog paths or at elevated temperatures. The SOD-123 package also requires attention to solder-paste volume, polarity orientation, copper thermal spreading, and the manufacturer’s recommended land pattern.
Typical uses include low-voltage DC-DC output rectification, switching-power freewheeling, reverse-polarity protection, low-voltage relay or solenoid current steering, and compact industrial-control boards. In each circuit, the 40 V reverse rating must exceed the worst-case bus voltage, while the 500 mA current rating must cover the continuous load with suitable thermal margin.
For PCB implementation, place the diode close to the switching or protected node and maintain short high-current paths. Observe cathode polarity carefully; incorrect orientation can cause immediate circuit failure. Verify the final design against the manufacturer datasheet for repetitive reverse voltage, average forward current, thermal conditions, and package-specific layout guidance.
ドロップイン代替品: MBR0540T1G — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
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代替品をリクエストMBR0540T1G 最大定格＆電気的特性
| Diode Type | Schottky power rectifier |
| Repetitive Reverse Voltage | 40 V |
| Forward Current | 500 mA |
| Maximum Forward Voltage | 510 mV |
| Diode Configuration | Single |
| パッケージ | SOD-123 |
| 実装タイプ | Surface mount |
| Technology | Schottky barrier |
| Application Category | Low-voltage, high-frequency rectification |
| Freewheeling Use | Supported |
| Polarity Protection Use | Supported |
MBR0540T1G ピン構成
| ピン 1 | A — Anode |
| ピン 2 | K — Cathode, identified by the package band |
主な用途
MBR0540T1G の用途: 6 件s: Low-Voltage DC-DC Output Rectification, Freewheeling Path in Switching Circuits, Reverse-Polarity Protection, Industrial Control Board Protection, Low-Voltage Relay and Solenoid Current Steering, Compact Power-Management Signal Conditioning.
Low-Voltage DC-DC Output Rectification
The MBR0540T1G is suitable for rectifying low-voltage, high-frequency converter outputs when the circuit requires a compact single-diode solution. Its 40 V repetitive reverse-voltage rating provides the stated reverse-bias capability, while the 500 mA forward-current rating supports loads up to the manufacturer’s specified current. The 510 mV maximum forward-voltage figure is useful when conduction loss matters in a compact supply. Place the diode close to the output node, observe the cathode band, and verify the actual bus voltage, ripple, temperature, and transient margin against the onsemi datasheet.
おすすめ
Freewheeling Path in Switching Circuits
The MBR0540T1G can provide a compact freewheeling path in low-voltage switching circuits because it is identified by onsemi for freewheeling use. Its Schottky barrier construction supports a favorable forward-drop versus reverse-current tradeoff, while the single SOD-123 package keeps the footprint small. The design must verify that the diode’s 40 V reverse rating exceeds the maximum circuit voltage and that its 500 mA rating covers the repetitive peak current. Check recovery behavior, switching losses, and thermal rise in the actual layout rather than relying only on the headline ratings.
おすすめ
Reverse-Polarity Protection
The MBR0540T1G is suitable for polarity protection in compact surface-mount equipment where a series single diode can block an incorrectly connected supply. The verified 40 V rating is the key selection constraint, and the 510 mV maximum forward voltage identifies the additional series-drop concern that must be included in the power budget. Confirm that the protected voltage, transient event, and current remain within the ratings. Use the manufacturer’s cathode-band orientation and PCB land pattern so a reversed assembly cannot compromise the protection function.
おすすめ
Industrial Control Board Protection
The MBR0540T1G fits low-voltage control boards that need local rectification or reverse-polarity protection without allocating through-hole diode space. Its 500 mA forward-current rating is appropriate for small signal and control-rail tasks, while the SOD-123 package supports automated surface-mount assembly. The board designer should still verify the ambient temperature, copper area, repetitive current waveform, and any inductive or capacitive transients. Confirm the final layout against the official package drawing and avoid placing the diode where a nearby high-temperature component can raise its operating temperature beyond the verified data.
おすすめ
Low-Voltage Relay and Solenoid Current Steering
The MBR0540T1G can be considered for low-voltage relay or solenoid current-steering circuits when the load current and inductive voltage stay within the 40 V, 500 mA device ratings. Its Schottky forward characteristic is helpful where the circuit benefits from a compact diode with a specified maximum forward voltage of 510 mV. However, inductive kickback must be clamped within the diode’s repetitive reverse-voltage rating, and the pulse waveform must be checked separately from a continuous-load assumption. Add the necessary damping or clamp components and validate peak current and temperature in the completed assembly.
おすすめ
Compact Power-Management Signal Conditioning
The MBR0540T1G can be used in compact power-management boards for low-voltage signal conditioning, local polarity protection, or auxiliary rectification. The single-diode SOD-123 format helps preserve board area, and the Schottky barrier is aligned with high-frequency switching environments. Designers should not treat the 510 mV maximum forward voltage as a constant drop at every current; use the manufacturer’s test conditions and thermal information. Likewise, reverse leakage is not supplied in the verified snippets, so it must be checked before using the diode in a precision analog node.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MBR0540T1G — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 |
|---|---|
| Package | SOD-123 |
| Brand | onsemi |
| Repetitive Reverse Voltage | 40 V |
| Forward Current | 500 mA |
| Maximum Forward Voltage | 510 mV |
| Diode Type | Schottky power rectifier |
| Configuration | Single diode |
| Mounting Type | Surface mount |
主な差別化要因
- Compact single-diode Schottky implementation （vs A conventional silicon rectifier)
- High-frequency rectification positioning （vs A general-purpose rectifier)
- Space-constrained surface-mount format （vs A larger through-hole diode package)
設計ノート
Check the complete circuit against the verified 40 V repetitive reverse-voltage and 500 mA forward-current ratings. The 510 mV maximum forward-voltage specification is a headline rating, not a universal operating drop; use the datasheet test conditions for the actual current and temperature. Estimated conduction loss can be calculated as P = VF x IF only after the operating forward voltage is obtained from the manufacturer data.
Orient the cathode band to the protected or rectifier output node according to the circuit topology, and follow the onsemi SOD-123 land pattern. Keep the diode close to the switching node or protected input so the high-current loop remains short. Avoid placing the part adjacent to excessive heat sources unless the final temperature rise has been verified.
Do not substitute the MBR0540T1G without checking reverse voltage, average current, peak current, temperature, leakage, and polarity. Schottky diodes can have higher reverse leakage than conventional silicon rectifiers, and the supplied data does not provide a leakage value. Also do not assume that a related MPN with the same nominal 40 V and 500 mA rating is a drop-in replacement without comparing the official datasheets.
コンプライアンス情報
The supplied verified sources identify the manufacturer and electrical/package data but do not provide verified compliance statements for this exact MPN. Compliance fields are therefore unknown.
