MHL9236N - 2.5W, 30.5dB RF LDMOS Amplifier | Freescale/NXP
部品番号: MHL9236N ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.2 | $342.00 |
| 100 | $29.85 | $2,985.00 |
| 500 | $26.4 | $13,200.00 |
| 1,000 | $23.95 | $23,950.00 |
MHL9236N 概要
An RF linear LDMOS amplifier is a power transistor amplifier designed to faithfully reproduce complex modulated waveforms (such as CDMA/WCDMA OFDM carriers) with minimal spectral regrowth and distortion. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for cellular base-station power amplifiers because it combines high RF power density, high gain, and excellent ruggedness at relatively low cost. Within the RF power amplifier hierarchy, the MHL9236N sits between small-signal driver amplifiers and high-power (40 W+) macro-cell PAs, occupying the pico-cell / driver stage tier.
Key performance features include 30.5 dB typical power gain, 2.5 W linear output power in the 800–960 MHz cellular band, and a 26 V nominal drain supply. Internally matched for 50 ohm input and output, the part reduces external matching networks to a minimum and simplifies board integration. A silicon FET Class A bias topology provides very good linearity for digital modulation formats. The TO-272 WB-16 package offers excellent thermal performance for the 2.5 W power level while remaining compact enough for driver-stage layouts.
Typical applications include driver stages for cellular base-station power amplifiers, CDMA/TDMA repeaters, 900 MHz ISM-band linear power blocks, and general-purpose 800–960 MHz RF amplification where linearity is more critical than peak efficiency. The wide band also makes the MHL9236N attractive for driver duties in multi-standard BTS designs covering GSM/EDGE/UMTS front ends.
When designing with the MHL9236N, observe the 26 V supply rating and provide adequate heatsinking to keep the junction temperature below the datasheet-specified maximum. Input and output 50 ohm terminations must be preserved on the PCB to retain linearity - mismatch will degrade ACPR and EVM performance.
This page synthesizes distributor inventory, application guidance, and comparison with same-package RF drivers not found in the manufacturer datasheet itself.
ドロップイン代替品: MHL9236N — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MRF284
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF284L
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MHL9236
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MHL9236N 最大定格＆電気的特性
| 機能 | RF Linear Power Amplifier (LDMOS) |
| Frequency Range | 800 MHz to 960 MHz |
| Output Power (Pout) | 2.5 W (linear, typical) |
| Power Gain | 30.5 dB (typical) |
| Drain Supply Voltage (VDD) | 26 V (nominal) |
| 電源電流 | 620 mA (maximum) |
| Class of Operation | Class A (silicon FET, ultra-linear) |
| Input / Output Impedance | 50 ohm (internally matched) |
| Modulation Formats Supported | CDMA, Cellular TDMA |
| Maximum VSWR | 1.5 (typical operating) |
| パッケージ | TO-272 WB-16 |
| 実装タイプ | Surface Mount / Flange Mount |
| Operating Mode | Wideband linear amplifier |
| Manufacturer (Original) | Freescale Semiconductor (now NXP) |
MHL9236N to-272 wb-16 ピン配置ガイド
MHL9236N (to-272 wb-16 パッケージ) のピン配置。 このアナログコンポーネントは、入力、出力、および電源ピンを備えています。オフセットナル、補償、イネーブルピンの設定については、メーカーのデータシートを参照してください。信号調整やアンプ回路に最適です。
詳細なピン配置データはありません: MHL9236N.
詳細は データシート をご参照ください。
安全動作領域 (MHL9236N)
主な用途
MHL9236N の用途: 6 件s: Cellular Base-Station Driver Stage, CDMA/TDMA Linear Power Amplifier, 900 MHz ISM Band Linear Amplifier, RF Repeater / Booster Driver, Multi-Standard BTS Front End, Test & Measurement Linear PA.
Cellular Base-Station Driver Stage
The MHL9236N's 30.5 dB gain and 2.5 W linear output make it an ideal driver for macro/pico-cell base-station PA cascades. Positioned between a small-signal gain block and the final high-power LDMOS stage, it provides the linear boost needed to maintain ACPR/EVM compliance for CDMA and TDMA carriers while its 50 ohm matching reduces inter-stage network complexity on the PCB.
おすすめ
CDMA/TDMA Linear Power Amplifier
Designed specifically for ultra-linear amplification of digitally modulated carriers, the MHL9236N delivers the spectral purity required for CDMA and cellular TDMA links. Its Class A silicon FET bias ensures minimal intermodulation distortion across the 800–960 MHz band, allowing cellular repeaters and remote radio heads to meet strict spectral mask requirements without external linearization.
おすすめ
900 MHz ISM Band Linear Amplifier
Within the 902–928 MHz ISM band, the MHL9236N provides 2.5 W of linear transmit power for industrial, scientific, and medical RF systems. Its wideband 800–960 MHz match covers the entire band without retuning, simplifying RF front-end design for RFID readers, wireless telemetry transmitters, and industrial sensor links where linearity outranks peak efficiency.
おすすめ
RF Repeater / Booster Driver
Cellular and public-safety RF repeaters rely on low-distortion driver stages to preserve signal integrity through cascaded amplification. The MHL9236N's 30.5 dB gain and ultra-linear Class A operation deliver the headroom and spectral purity required at the driver tier, while its 26 V supply and 50 ohm matching allow direct PCB integration into standard repeater modules.
おすすめ
Multi-Standard BTS Front End
The MHL9236N's 800–960 MHz bandwidth makes it equally useful in BTS front ends handling GSM, EDGE, UMTS, and early LTE deployments that share the cellular sub-band. The Class A bias gives designers a single driver part usable across modulation formats, reducing BOM complexity for multi-standard radio units serving legacy and modern cellular air interfaces simultaneously.
おすすめ
Test & Measurement Linear PA
Bench-top RF test sources and characterization equipment benefit from the MHL9236N's flat gain and ultra-linear Class A behavior. Designers building CW or modulated test amplifiers for the 800–960 MHz band can use the part as a known-good linear driver, taking advantage of its 50 ohm match and stable bias point to deliver repeatable test waveforms with low harmonic content.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MHL9236N — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF284 | MRF284L | MHL9236 | MRF6S9060MR |
|---|---|---|---|---|---|
| Package | TO-272 WB-16 | TO-272 WB-16 | TO-272 WB-16 | TO-272 WB-16 | TO-270 WB-4 |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 800–960 MHz | 800–960 MHz | 800–960 MHz | 800–960 MHz | 800–960 MHz |
| Output Power | 2.5 W | 10 W | 4 W | 2.5 W | 60 W |
| Power Gain | 30.5 dB | 16 dB | 20 dB | 30.5 dB | 19 dB |
| Drain Supply | 26 V | 26 V | 26 V | 26 V | 28 V |
| Class of Operation | Class A | Class AB | Class AB | Class A | Class AB |
| Lifecycle Status | NRND | NRND | NRND | Obsolete (predecessor) | NRND |
主な差別化要因
- Class A bias for ultra-linear CDMA/TDMA amplification （vs MRF284)
- Higher gain for fewer driver stages （vs MRF284)
- Compact 2.5 W power level in TO-272 WB-16 （vs MRF6S9060MR)
設計ノート
Estimated: at 26 V drain and the 620 mA maximum supply current published in the datasheet, worst-case DC dissipation approaches 16 W with a fully-on bias point. In normal linear operation at 2.5 W Pout, RF dissipation typically lands around 6–8 W. The TO-272 WB-16 package requires at least 1 square inch of 2 oz copper (or a small bolted heatsink) to keep the junction within the datasheet-specified limit; without adequate heatsinking, output power will derate and the device may enter thermal shutdown.
Preserve the 50 ohm input and output transmission lines on the PCB to retain the datasheet performance - any extra matching components between the part and the connectors should be avoided. Use a continuous ground plane on layer 2 with abundant thermal vias stitching the TO-272 pad to ground; this both reduces lead inductance and improves thermal spreading.
Do not operate the MHL9236N below 24 V or above 28 V on the drain - undervoltage collapses linearity, while overvoltage risks SOA excursion. Ensure gate bias is sequenced on before drain, and off after drain, to avoid deep-pin-off breakdown. VSWR must remain below 1.5 in operation; higher mismatch can permanently damage the LDMOS die.
コンプライアンス情報
Compliance status for RoHS/REACH/lead-free not explicitly stated in the verified web data; treated as [DATA_NEEDED] pending datasheet review. AEC-Q100 not applicable - this is an RF PA, not an automotive-qualified IC.
