MHL9236N - 2.5W, 30.5dB RF LDMOS Amplifier | Freescale/NXP
Référence : MHL9236N ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $29.85 | $2 985,00 |
| 500 | $26.4 | $13 200,00 |
| 1 000 | $23.95 | $23 950,00 |
MHL9236N Présentation
An RF linear LDMOS amplifier is a power transistor amplifier designed to faithfully reproduce complex modulated waveforms (such as CDMA/WCDMA OFDM carriers) with minimal spectral regrowth and distortion. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for cellular base-station power amplifiers because it combines high RF power density, high gain, and excellent ruggedness at relatively low cost. Within the RF power amplifier hierarchy, the MHL9236N sits between small-signal driver amplifiers and high-power (40 W+) macro-cell PAs, occupying the pico-cell / driver stage tier.
Key performance features include 30.5 dB typical power gain, 2.5 W linear output power in the 800–960 MHz cellular band, and a 26 V nominal drain supply. Internally matched for 50 ohm input and output, the part reduces external matching networks to a minimum and simplifies board integration. A silicon FET Class A bias topology provides very good linearity for digital modulation formats. The TO-272 WB-16 package offers excellent thermal performance for the 2.5 W power level while remaining compact enough for driver-stage layouts.
Typical applications include driver stages for cellular base-station power amplifiers, CDMA/TDMA repeaters, 900 MHz ISM-band linear power blocks, and general-purpose 800–960 MHz RF amplification where linearity is more critical than peak efficiency. The wide band also makes the MHL9236N attractive for driver duties in multi-standard BTS designs covering GSM/EDGE/UMTS front ends.
When designing with the MHL9236N, observe the 26 V supply rating and provide adequate heatsinking to keep the junction temperature below the datasheet-specified maximum. Input and output 50 ohm terminations must be preserved on the PCB to retain linearity - mismatch will degrade ACPR and EVM performance.
This page synthesizes distributor inventory, application guidance, and comparison with same-package RF drivers not found in the manufacturer datasheet itself.
Alternatives de remplacement direct pour MHL9236N — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF284
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF284L
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MHL9236
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MHL9236N Valeurs maximales et caractéristiques électriques
| Fonction | RF Linear Power Amplifier (LDMOS) |
| Frequency Range | 800 MHz to 960 MHz |
| Output Power (Pout) | 2.5 W (linear, typical) |
| Power Gain | 30.5 dB (typical) |
| Drain Supply Voltage (VDD) | 26 V (nominal) |
| Courant d'alimentation | 620 mA (maximum) |
| Class of Operation | Class A (silicon FET, ultra-linear) |
| Input / Output Impedance | 50 ohm (internally matched) |
| Modulation Formats Supported | CDMA, Cellular TDMA |
| Maximum VSWR | 1.5 (typical operating) |
| Boîtier | TO-272 WB-16 |
| Type de montage | Surface Mount / Flange Mount |
| Operating Mode | Wideband linear amplifier |
| Manufacturer (Original) | Freescale Semiconductor (now NXP) |
Guide de configuration des broches du MHL9236N to-272 wb-16
Configuration des broches du MHL9236N (boîtier to-272 wb-16). Ce composant analogique comporte des broches d'entrée, de sortie et d'alimentation. Consultez la fiche technique du fabricant pour les configurations des broches d'annulation d'offset, de compensation et d'activation. Idéal pour le conditionnement de signaux et les circuits amplificateurs.
Aucune donnée de brochage détaillée disponible pour MHL9236N.
Consultez la fiche technique pour la configuration complète des broches.
Zone de fonctionnement sûr (MHL9236N)
Applications typiques
MHL9236N convient pour 6 applications: Cellular Base-Station Driver Stage, CDMA/TDMA Linear Power Amplifier, 900 MHz ISM Band Linear Amplifier, RF Repeater / Booster Driver, Multi-Standard BTS Front End, Test & Measurement Linear PA.
Cellular Base-Station Driver Stage
The MHL9236N's 30.5 dB gain and 2.5 W linear output make it an ideal driver for macro/pico-cell base-station PA cascades. Positioned between a small-signal gain block and the final high-power LDMOS stage, it provides the linear boost needed to maintain ACPR/EVM compliance for CDMA and TDMA carriers while its 50 ohm matching reduces inter-stage network complexity on the PCB.
Recommandé
CDMA/TDMA Linear Power Amplifier
Designed specifically for ultra-linear amplification of digitally modulated carriers, the MHL9236N delivers the spectral purity required for CDMA and cellular TDMA links. Its Class A silicon FET bias ensures minimal intermodulation distortion across the 800–960 MHz band, allowing cellular repeaters and remote radio heads to meet strict spectral mask requirements without external linearization.
Recommandé
900 MHz ISM Band Linear Amplifier
Within the 902–928 MHz ISM band, the MHL9236N provides 2.5 W of linear transmit power for industrial, scientific, and medical RF systems. Its wideband 800–960 MHz match covers the entire band without retuning, simplifying RF front-end design for RFID readers, wireless telemetry transmitters, and industrial sensor links where linearity outranks peak efficiency.
Recommandé
RF Repeater / Booster Driver
Cellular and public-safety RF repeaters rely on low-distortion driver stages to preserve signal integrity through cascaded amplification. The MHL9236N's 30.5 dB gain and ultra-linear Class A operation deliver the headroom and spectral purity required at the driver tier, while its 26 V supply and 50 ohm matching allow direct PCB integration into standard repeater modules.
Recommandé
Multi-Standard BTS Front End
The MHL9236N's 800–960 MHz bandwidth makes it equally useful in BTS front ends handling GSM, EDGE, UMTS, and early LTE deployments that share the cellular sub-band. The Class A bias gives designers a single driver part usable across modulation formats, reducing BOM complexity for multi-standard radio units serving legacy and modern cellular air interfaces simultaneously.
Recommandé
Test & Measurement Linear PA
Bench-top RF test sources and characterization equipment benefit from the MHL9236N's flat gain and ultra-linear Class A behavior. Designers building CW or modulated test amplifiers for the 800–960 MHz band can use the part as a known-good linear driver, taking advantage of its 50 ohm match and stable bias point to deliver repeatable test waveforms with low harmonic content.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MHL9236N — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF284 | MRF284L | MHL9236 | MRF6S9060MR |
|---|---|---|---|---|---|
| Package | TO-272 WB-16 | TO-272 WB-16 | TO-272 WB-16 | TO-272 WB-16 | TO-270 WB-4 |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 800–960 MHz | 800–960 MHz | 800–960 MHz | 800–960 MHz | 800–960 MHz |
| Output Power | 2.5 W | 10 W | 4 W | 2.5 W | 60 W |
| Power Gain | 30.5 dB | 16 dB | 20 dB | 30.5 dB | 19 dB |
| Drain Supply | 26 V | 26 V | 26 V | 26 V | 28 V |
| Class of Operation | Class A | Class AB | Class AB | Class A | Class AB |
| Lifecycle Status | NRND | NRND | NRND | Obsolete (predecessor) | NRND |
Principaux différenciateurs
- Class A bias for ultra-linear CDMA/TDMA amplification (vs MRF284)
- Higher gain for fewer driver stages (vs MRF284)
- Compact 2.5 W power level in TO-272 WB-16 (vs MRF6S9060MR)
Notes de conception
Estimated: at 26 V drain and the 620 mA maximum supply current published in the datasheet, worst-case DC dissipation approaches 16 W with a fully-on bias point. In normal linear operation at 2.5 W Pout, RF dissipation typically lands around 6–8 W. The TO-272 WB-16 package requires at least 1 square inch of 2 oz copper (or a small bolted heatsink) to keep the junction within the datasheet-specified limit; without adequate heatsinking, output power will derate and the device may enter thermal shutdown.
Preserve the 50 ohm input and output transmission lines on the PCB to retain the datasheet performance - any extra matching components between the part and the connectors should be avoided. Use a continuous ground plane on layer 2 with abundant thermal vias stitching the TO-272 pad to ground; this both reduces lead inductance and improves thermal spreading.
Do not operate the MHL9236N below 24 V or above 28 V on the drain - undervoltage collapses linearity, while overvoltage risks SOA excursion. Ensure gate bias is sequenced on before drain, and off after drain, to avoid deep-pin-off breakdown. VSWR must remain below 1.5 in operation; higher mismatch can permanently damage the LDMOS die.
Informations de conformité
Compliance status for RoHS/REACH/lead-free not explicitly stated in the verified web data; treated as [DATA_NEEDED] pending datasheet review. AEC-Q100 not applicable - this is an RF PA, not an automotive-qualified IC.
