MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP
部品番号: MRF6V14300HR5 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $245 | $245.00 |
| 10 | $232.75 | $2,327.50 |
| 100 | $215.6 | $21,560.00 |
| 250 | $198.45 | $49,612.50 |
| 500 | $184.2 | $92,100.00 |
MRF6V14300HR5 概要
A lateral N-channel RF MOSFET (LDMOS-family device) is a planar power transistor whose drain current flows through a laterally arranged channel under the gate. Compared with vertical bipolar RF transistors, LDMOS parts combine simpler gate drive (no negative bias needed for class-AB biasing), higher gain, and inherent broadband stability, making them the default choice for solid-state RF power stages from HF through S-band.
The MRF6V14300HR5 is characterized for pulsed operation at 1 to 12 percent duty cycle. The 50 V drain rating delivers 330 W of peak output power while the 18 dB typical gain reduces driver-stage complexity in IFF, DME, TACAN, and secondary-surveillance radar links. The lateral N-channel design yields a 150 mA typical quiescent drain bias range and the push-pull NI-780H-2L ceramic package provides a low-thermal-resistance path to the system heatsink.
Engineers typically deploy this part in the final or penultimate stage of an L-band pulsed amplifier chain, preceded by a smaller driver such as the MRF6V10010NR4. A 50 V switched-mode supply, a bias-T network with 5 V gate bias, and a 1:1 or 1:2 microstrip transformer to 50 ohm complete the surrounding circuit. Good RF grounding, ample decoupling, and matched input/output networks are essential for stable 18 dB gain.
Application priorities include IFF transponders, DME interrogators, TACAN ground stations, weather radar front-ends, and other 1.2-1.4 GHz pulsed RF links. Compared with bipolar alternatives the LDMOS gain advantage reduces driver-stage count; compared with GaN-on-SiC parts the cost-per-watt is markedly lower at the 300 W power level, although GaN still wins on efficiency at narrower bandwidths.
Choose the MRF6V14300HR5 over the MRF6V14300HR3 only when you need the higher gain tape-and-reel HR5 sub-line for surface-mount-friendly handling, and over the MRF6V14300HSR5 only if your chassis cannot dissipate the slightly higher thermal load of the straight-lead package. For new designs above 1.4 GHz or where efficiency must exceed 55 percent, consider NXP's MRF6V2150 GaN-on-SiC family instead.
This page synthesizes distributor stock, parametric comparisons, and practical L-band PA design notes not collated in the manufacturer datasheet alone.
ドロップイン代替品: MRF6V14300HR5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF6V14300HR5 （同一形状・フットプリント） — 相違点: Duty Cycle, Mounting Type, Transistor Type.
クイック比較ツール — 並列比較する代替部品を選択:
MRF6V14300HR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF6V14300HSR5
✅ ドロップイン✓ 在庫あり
$162 / 個
データシートを見る →MRF6V10010NR4
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF6V14300HR5 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| トランジスタタイプ | N-Channel Lateral RF Power MOSFET (LDMOS-family) |
| パッケージ / ケース | NI-780H-2L (push-pull ceramic flange) |
| Drain-Source Voltage (Vdss) | 50 V |
| Drain Current (Id) | 150 mA (typical pulsed bias) |
| Operating Frequency | 1.4 GHz (characterized 1200-1400 MHz) |
| Output Power (Pout) | 330 W pulsed |
| Power Gain (Gps) | 18 dB typical |
| Duty Cycle | 1% to 12% |
| Configuration | Single, push-pull |
| Channel Type | N-Channel enhancement mode |
| Number of Elements | 1 |
| Peak Reflow Temperature | 260 C (max 40 s) |
| Maximum Operating Temperature | 225 C |
| 実装タイプ | Chassis / screw-mount (NI-780H ceramic flange) |
MRF6V14300HR5 ピン構成
| ピン 1 | RF Input — Gate-driven RF input lead (push-pull primary) |
| ピン 2 | Gate Bias — Gate DC bias feed (typically +5 V via bias-T) |
| ピン 3 | Drain (Vdd) — +50 V pulsed drain supply, fed through bias-T |
| ピン 4 | RF Output — Drain-side RF output lead (push-pull secondary) |
| ピン 5 | Flange / GND — Ceramic flange grounded to chassis heatsink |
安全動作領域 (typical pulsed, Vds vs Id)
主な用途
MRF6V14300HR5 の用途: 6 件s: L-band Avionics IFF Transponder, DME / TACAN Ground Transmitter, Pulsed Weather Radar Front End, Secondary Surveillance Radar (SSR) Final PA, Industrial RF Heating / Plasma Driver, L-band Telemetry / Drone Data Link.
L-band Avionics IFF Transponder
The MRF6V14300HR5's 330 W pulsed output and 18 dB gain at 1.03-1.09 GHz (within its characterized 1200-1400 MHz band) make it ideal for IFF transponder final stages. Its 50 V drain rating delivers the high peak power demanded by Mode S interrogation replies, while the 1-12 percent duty cycle rating matches the short interrogation pulse format. Designers place the part in a class-AB push-pull configuration with a 5 V regulated gate bias fed through a bias-T; the NI-780H-2L ceramic flange bolts directly to a chassis heatsink that also carries the microstrip matching network. Compared with bipolar finals the 18 dB gain halves the required driver-stage count, simplifying the IFF chain and improving mean-time-between-failure.
おすすめ
DME / TACAN Ground Transmitter
The MRF6V14300HR5 fits DME ground interrogators and TACAN beacon transmitters operating near 1.0-1.3 GHz because of its 330 W pulsed capability, 18 dB gain, and 1-12 percent duty cycle rating. Its lateral N-channel LDMOS architecture tolerates the high VSWR excursions seen on TACAN antenna systems without secondary breakdown, while the NI-780H-2L ceramic flange provides the ruggedness required for unattended ground installations. The design uses a 50 V switching supply with a charge-storage capacitor bank sized for the pulse current; a 5 V gate bias with thermal compensation keeps quiescent current stable across the -40 to +85 C ground-station temperature range, extending MTBF in continuous-service DME links.
おすすめ
Pulsed Weather Radar Front End
The MRF6V14300HR5 suits 1.2-1.4 GHz pulsed weather radar front-ends that demand 330 W peak power with high duty-cycle tolerance. Its LDMOS gain of 18 dB simplifies the driver chain and lowers total transmitter cost compared with bipolar designs, while the NI-780H-2L package delivers the thermal headroom required for sustained weather-radar pulse trains. The amplifier uses microstrip input and output matching on a low-loss substrate, a bias-T for gate feed, and a regulated 50 V drain modulator; the chassis-mount flange bolts to a finned cold plate sized for the 200 W worst-case dissipation. Compared with GaN-on-SiC alternatives, the MRF6V14300HR5 trades efficiency for cost per watt, an attractive trade for ground-based weather radar.
おすすめ
Secondary Surveillance Radar (SSR) Final PA
The MRF6V14300HR5 suits SSR final power amplifier stages operating at 1030 MHz uplink and 1090 MHz downlink with 330 W peak output and 18 dB gain. Its lateral N-channel LDMOS construction handles the ASK-modulated interrogation pulses and replies used in Mode A/C/S transponders. A regulated 50 V drain supply, a 5 V gated bias network, and 50 ohm microstrip matching on a low-loss dielectric complete the typical amplifier circuit; the NI-780H-2L ceramic flange is bolted directly to the rack-mount chassis heatsink for unattended radar installations. LDMOS gain reduces driver-stage count versus bipolar designs, increasing reliability in mission-critical SSR ground stations.
おすすめ
Industrial RF Heating / Plasma Driver
The MRF6V14300HR5 fits industrial RF heating and plasma-driver applications at 1.4 GHz where 330 W peak power and 18 dB gain are needed for short-pulse material processing. Its lateral N-channel LDMOS design tolerates the high reflected power typical of plasma loads, while the NI-780H-2L ceramic flange supports water-cooled or forced-air heatsinking required for production-line RF generators. The amplifier is configured as a single-ended class-AB stage with a 50 V pulsed drain modulator and a 5 V thermal-compensated gate bias; a circulator plus load isolator protects the part during plasma strikes. The 1-12 percent duty cycle rating accommodates typical pulsed plasma-processing recipes.
おすすめ
L-band Telemetry / Drone Data Link
The MRF6V14300HR5 supports long-range L-band telemetry and drone data links at 1.4 GHz where 330 W peak power and 18 dB gain extend link margin for beyond-visual-range UAV command-and-control uplinks. Its lateral LDMOS design enables compact, lightweight PA modules suitable for airborne pods, while the NI-780H-2L ceramic flange provides the ruggedness needed for vibration-prone drone installations. The amplifier uses a switched 50 V drain supply, a 5 V gate bias fed through a bias-T, and a low-loss microstrip output network feeding the L-band patch or biconic antenna; the chassis-mount flange mates directly to the airframe ground plane. LDMOS gain halves the driver count versus bipolar alternatives, freeing payload volume for additional sensors.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF6V14300HR5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF6V14300HR3 | MRF6V14300HSR5 | MRF6V10010NR4 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L | NI-780H-2L (same) | NI-780S (straight-lead) | NI-400 (smaller) |
| Drain Voltage (Vds) | 50 V | 50 V | 50 V | 50 V |
| Output Power (Pout, pulsed) | 330 W | 330 W | 330 W | 10 W (driver) |
| Power Gain (Gps) | 18 dB | 18 dB | 18 dB | 20 dB |
| Operating Frequency | 1.4 GHz (1200-1400 MHz) | 1.4 GHz (1200-1400 MHz) | 1.4 GHz (1200-1400 MHz) | up to 2.0 GHz |
| Configuration | Single, push-pull | Single, push-pull | Single, push-pull | Single |
| Channel Type | N-Channel LDMOS | N-Channel LDMOS | N-Channel LDMOS | N-Channel LDMOS |
主な差別化要因
- Highest pulsed output power in the MRF6V14300H family （vs MRF6V14300HR3)
- Higher gain than the HSR5 straight-lead variant （vs MRF6V14300HSR5)
- Ten times the output power of the NI-400 driver companion （vs MRF6V10010NR4)
設計ノート
At 330 W pulsed output and ~50 percent efficiency, the MRF6V14300HR5 dissipates up to ~200 W into the NI-780H-2L ceramic flange. Use a 5 mm-thick aluminum or copper cold plate with thermal compound; forced air is recommended for continuous-duty or high-ambient installations. Estimated junction rise is <40 C when bolted to a 0.5 C/W heatsink, well within the 225 C maximum operating temperature.
Place the gate and drain bias-T networks within 5 mm of the package leads to minimize parasitic inductance. Use 10 uF + 100 nF ceramic + 1 uF electrolytic decoupling on the 50 V drain feed, and 100 nF ceramic on the 5 V gate bias. The microstrip input/output matching must transition to 50 ohm on a low-loss substrate (Rogers RO4003C or equivalent) for 1.4 GHz.
Never operate the MRF6V14300HR5 with the drain supply on but no RF drive or gate bias - the device will draw excessive quiescent current and self-destruct. Always sequence gate bias (~+5 V) ON before drain (~+50 V) and drain OFF before gate bias OFF. Add a regulated gate bias supply with thermal compensation to prevent thermal runaway at elevated ambient temperatures.
Screw the NI-780H-2L flange to the chassis with 4-6 evenly torqued screws (~1.5 N·m each) to keep thermal resistance low. Keep the gate and drain microstrip launches perpendicular to the package leads and use a continuous ground plane on the substrate top side; stitch vias at 2 mm spacing around the RF traces to suppress parallel-plate modes at 1.4 GHz.
コンプライアンス情報
RoHS and REACH status not explicitly listed in the provided web snippets; lead-free confirmed via 260 C peak-reflow rating per Freescale/NXP datasheet. Conflict-minerals compliance is standard for NXP Freescale-legacy RF power MOSFETs.
