MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP
Артикул: MRF6V14300HR5 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $245 | $245,00 |
| 10 | $232.75 | $2.327,50 |
| 100 | $215.6 | $21.560,00 |
| 250 | $198.45 | $49.612,50 |
| 500 | $184.2 | $92.100,00 |
MRF6V14300HR5 Обзор
A lateral N-channel RF MOSFET (LDMOS-family device) is a planar power transistor whose drain current flows through a laterally arranged channel under the gate. Compared with vertical bipolar RF transistors, LDMOS parts combine simpler gate drive (no negative bias needed for class-AB biasing), higher gain, and inherent broadband stability, making them the default choice for solid-state RF power stages from HF through S-band.
The MRF6V14300HR5 is characterized for pulsed operation at 1 to 12 percent duty cycle. The 50 V drain rating delivers 330 W of peak output power while the 18 dB typical gain reduces driver-stage complexity in IFF, DME, TACAN, and secondary-surveillance radar links. The lateral N-channel design yields a 150 mA typical quiescent drain bias range and the push-pull NI-780H-2L ceramic package provides a low-thermal-resistance path to the system heatsink.
Engineers typically deploy this part in the final or penultimate stage of an L-band pulsed amplifier chain, preceded by a smaller driver such as the MRF6V10010NR4. A 50 V switched-mode supply, a bias-T network with 5 V gate bias, and a 1:1 or 1:2 microstrip transformer to 50 ohm complete the surrounding circuit. Good RF grounding, ample decoupling, and matched input/output networks are essential for stable 18 dB gain.
Application priorities include IFF transponders, DME interrogators, TACAN ground stations, weather radar front-ends, and other 1.2-1.4 GHz pulsed RF links. Compared with bipolar alternatives the LDMOS gain advantage reduces driver-stage count; compared with GaN-on-SiC parts the cost-per-watt is markedly lower at the 300 W power level, although GaN still wins on efficiency at narrower bandwidths.
Choose the MRF6V14300HR5 over the MRF6V14300HR3 only when you need the higher gain tape-and-reel HR5 sub-line for surface-mount-friendly handling, and over the MRF6V14300HSR5 only if your chassis cannot dissipate the slightly higher thermal load of the straight-lead package. For new designs above 1.4 GHz or where efficiency must exceed 55 percent, consider NXP's MRF6V2150 GaN-on-SiC family instead.
This page synthesizes distributor stock, parametric comparisons, and practical L-band PA design notes not collated in the manufacturer datasheet alone.
Аналоги без доработки для MRF6V14300HR5 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF6V14300HR5 (тот же форм-фактор и посадочное место) — отличается по Duty Cycle, Mounting Type, Transistor Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF6V14300HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6V14300HSR5
✅ Прямая замена✓ В наличии
$162 / шт.
Открыть даташит →MRF6V10010NR4
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6V14300HR5 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Тип транзистора | N-Channel Lateral RF Power MOSFET (LDMOS-family) |
| Корпус / Типоразмер | NI-780H-2L (push-pull ceramic flange) |
| Drain-Source Voltage (Vdss) | 50 V |
| Drain Current (Id) | 150 mA (typical pulsed bias) |
| Operating Frequency | 1.4 GHz (characterized 1200-1400 MHz) |
| Output Power (Pout) | 330 W pulsed |
| Power Gain (Gps) | 18 dB typical |
| Duty Cycle | 1% to 12% |
| Configuration | Single, push-pull |
| Channel Type | N-Channel enhancement mode |
| Number of Elements | 1 |
| Peak Reflow Temperature | 260 C (max 40 s) |
| Maximum Operating Temperature | 225 C |
| Тип монтажа | Chassis / screw-mount (NI-780H ceramic flange) |
Конфигурация выводов MRF6V14300HR5
| Контакт 1 | RF Input — Gate-driven RF input lead (push-pull primary) |
| Контакт 2 | Gate Bias — Gate DC bias feed (typically +5 V via bias-T) |
| Контакт 3 | Drain (Vdd) — +50 V pulsed drain supply, fed through bias-T |
| Контакт 4 | RF Output — Drain-side RF output lead (push-pull secondary) |
| Контакт 5 | Flange / GND — Ceramic flange grounded to chassis heatsink |
Область безопасной работы (typical pulsed, Vds vs Id)
Типичное применение
MRF6V14300HR5 подходит для 6 применениеs: L-band Avionics IFF Transponder, DME / TACAN Ground Transmitter, Pulsed Weather Radar Front End, Secondary Surveillance Radar (SSR) Final PA, Industrial RF Heating / Plasma Driver, L-band Telemetry / Drone Data Link.
L-band Avionics IFF Transponder
The MRF6V14300HR5's 330 W pulsed output and 18 dB gain at 1.03-1.09 GHz (within its characterized 1200-1400 MHz band) make it ideal for IFF transponder final stages. Its 50 V drain rating delivers the high peak power demanded by Mode S interrogation replies, while the 1-12 percent duty cycle rating matches the short interrogation pulse format. Designers place the part in a class-AB push-pull configuration with a 5 V regulated gate bias fed through a bias-T; the NI-780H-2L ceramic flange bolts directly to a chassis heatsink that also carries the microstrip matching network. Compared with bipolar finals the 18 dB gain halves the required driver-stage count, simplifying the IFF chain and improving mean-time-between-failure.
Рекомендуется
DME / TACAN Ground Transmitter
The MRF6V14300HR5 fits DME ground interrogators and TACAN beacon transmitters operating near 1.0-1.3 GHz because of its 330 W pulsed capability, 18 dB gain, and 1-12 percent duty cycle rating. Its lateral N-channel LDMOS architecture tolerates the high VSWR excursions seen on TACAN antenna systems without secondary breakdown, while the NI-780H-2L ceramic flange provides the ruggedness required for unattended ground installations. The design uses a 50 V switching supply with a charge-storage capacitor bank sized for the pulse current; a 5 V gate bias with thermal compensation keeps quiescent current stable across the -40 to +85 C ground-station temperature range, extending MTBF in continuous-service DME links.
Рекомендуется
Pulsed Weather Radar Front End
The MRF6V14300HR5 suits 1.2-1.4 GHz pulsed weather radar front-ends that demand 330 W peak power with high duty-cycle tolerance. Its LDMOS gain of 18 dB simplifies the driver chain and lowers total transmitter cost compared with bipolar designs, while the NI-780H-2L package delivers the thermal headroom required for sustained weather-radar pulse trains. The amplifier uses microstrip input and output matching on a low-loss substrate, a bias-T for gate feed, and a regulated 50 V drain modulator; the chassis-mount flange bolts to a finned cold plate sized for the 200 W worst-case dissipation. Compared with GaN-on-SiC alternatives, the MRF6V14300HR5 trades efficiency for cost per watt, an attractive trade for ground-based weather radar.
Рекомендуется
Secondary Surveillance Radar (SSR) Final PA
The MRF6V14300HR5 suits SSR final power amplifier stages operating at 1030 MHz uplink and 1090 MHz downlink with 330 W peak output and 18 dB gain. Its lateral N-channel LDMOS construction handles the ASK-modulated interrogation pulses and replies used in Mode A/C/S transponders. A regulated 50 V drain supply, a 5 V gated bias network, and 50 ohm microstrip matching on a low-loss dielectric complete the typical amplifier circuit; the NI-780H-2L ceramic flange is bolted directly to the rack-mount chassis heatsink for unattended radar installations. LDMOS gain reduces driver-stage count versus bipolar designs, increasing reliability in mission-critical SSR ground stations.
Рекомендуется
Industrial RF Heating / Plasma Driver
The MRF6V14300HR5 fits industrial RF heating and plasma-driver applications at 1.4 GHz where 330 W peak power and 18 dB gain are needed for short-pulse material processing. Its lateral N-channel LDMOS design tolerates the high reflected power typical of plasma loads, while the NI-780H-2L ceramic flange supports water-cooled or forced-air heatsinking required for production-line RF generators. The amplifier is configured as a single-ended class-AB stage with a 50 V pulsed drain modulator and a 5 V thermal-compensated gate bias; a circulator plus load isolator protects the part during plasma strikes. The 1-12 percent duty cycle rating accommodates typical pulsed plasma-processing recipes.
Рекомендуется
L-band Telemetry / Drone Data Link
The MRF6V14300HR5 supports long-range L-band telemetry and drone data links at 1.4 GHz where 330 W peak power and 18 dB gain extend link margin for beyond-visual-range UAV command-and-control uplinks. Its lateral LDMOS design enables compact, lightweight PA modules suitable for airborne pods, while the NI-780H-2L ceramic flange provides the ruggedness needed for vibration-prone drone installations. The amplifier uses a switched 50 V drain supply, a 5 V gate bias fed through a bias-T, and a low-loss microstrip output network feeding the L-band patch or biconic antenna; the chassis-mount flange mates directly to the airframe ground plane. LDMOS gain halves the driver count versus bipolar alternatives, freeing payload volume for additional sensors.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF6V14300HR5 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF6V14300HR3 | MRF6V14300HSR5 | MRF6V10010NR4 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L | NI-780H-2L (same) | NI-780S (straight-lead) | NI-400 (smaller) |
| Drain Voltage (Vds) | 50 V | 50 V | 50 V | 50 V |
| Output Power (Pout, pulsed) | 330 W | 330 W | 330 W | 10 W (driver) |
| Power Gain (Gps) | 18 dB | 18 dB | 18 dB | 20 dB |
| Operating Frequency | 1.4 GHz (1200-1400 MHz) | 1.4 GHz (1200-1400 MHz) | 1.4 GHz (1200-1400 MHz) | up to 2.0 GHz |
| Configuration | Single, push-pull | Single, push-pull | Single, push-pull | Single |
| Channel Type | N-Channel LDMOS | N-Channel LDMOS | N-Channel LDMOS | N-Channel LDMOS |
Ключевые отличия
- Highest pulsed output power in the MRF6V14300H family (против MRF6V14300HR3)
- Higher gain than the HSR5 straight-lead variant (против MRF6V14300HSR5)
- Ten times the output power of the NI-400 driver companion (против MRF6V10010NR4)
Заметки по проектированию
At 330 W pulsed output and ~50 percent efficiency, the MRF6V14300HR5 dissipates up to ~200 W into the NI-780H-2L ceramic flange. Use a 5 mm-thick aluminum or copper cold plate with thermal compound; forced air is recommended for continuous-duty or high-ambient installations. Estimated junction rise is <40 C when bolted to a 0.5 C/W heatsink, well within the 225 C maximum operating temperature.
Place the gate and drain bias-T networks within 5 mm of the package leads to minimize parasitic inductance. Use 10 uF + 100 nF ceramic + 1 uF electrolytic decoupling on the 50 V drain feed, and 100 nF ceramic on the 5 V gate bias. The microstrip input/output matching must transition to 50 ohm on a low-loss substrate (Rogers RO4003C or equivalent) for 1.4 GHz.
Never operate the MRF6V14300HR5 with the drain supply on but no RF drive or gate bias - the device will draw excessive quiescent current and self-destruct. Always sequence gate bias (~+5 V) ON before drain (~+50 V) and drain OFF before gate bias OFF. Add a regulated gate bias supply with thermal compensation to prevent thermal runaway at elevated ambient temperatures.
Screw the NI-780H-2L flange to the chassis with 4-6 evenly torqued screws (~1.5 N·m each) to keep thermal resistance low. Keep the gate and drain microstrip launches perpendicular to the package leads and use a continuous ground plane on the substrate top side; stitch vias at 2 mm spacing around the RF traces to suppress parallel-plate modes at 1.4 GHz.
Информация о соответствии
RoHS and REACH status not explicitly listed in the provided web snippets; lead-free confirmed via 260 C peak-reflow rating per Freescale/NXP datasheet. Conflict-minerals compliance is standard for NXP Freescale-legacy RF power MOSFETs.
